JP2003060234A5 - - Google Patents
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- Publication number
- JP2003060234A5 JP2003060234A5 JP2001248738A JP2001248738A JP2003060234A5 JP 2003060234 A5 JP2003060234 A5 JP 2003060234A5 JP 2001248738 A JP2001248738 A JP 2001248738A JP 2001248738 A JP2001248738 A JP 2001248738A JP 2003060234 A5 JP2003060234 A5 JP 2003060234A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- nitride
- light emitting
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 23
- -1 nitride compound Chemical class 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 229910002601 GaN Inorganic materials 0.000 claims 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 3
- 229910052733 gallium Inorganic materials 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 150000003377 silicon compounds Chemical class 0.000 claims 2
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001248738A JP4058595B2 (ja) | 2001-08-20 | 2001-08-20 | 半導体発光素子及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001248738A JP4058595B2 (ja) | 2001-08-20 | 2001-08-20 | 半導体発光素子及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003060234A JP2003060234A (ja) | 2003-02-28 |
| JP2003060234A5 true JP2003060234A5 (enExample) | 2005-09-08 |
| JP4058595B2 JP4058595B2 (ja) | 2008-03-12 |
Family
ID=19077854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001248738A Expired - Fee Related JP4058595B2 (ja) | 2001-08-20 | 2001-08-20 | 半導体発光素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4058595B2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4725763B2 (ja) * | 2003-11-21 | 2011-07-13 | サンケン電気株式会社 | 半導体素子形成用板状基体の製造方法 |
| RU2326993C2 (ru) * | 2006-07-25 | 2008-06-20 | Самсунг Электро-Меканикс Ко., Лтд. | Способ выращивания монокристалла нитрида на кремниевой пластине, нитридный полупроводниковый светоизлучающий диод, изготовленный с его использованием, и способ такого изготовления |
| JP2008071832A (ja) * | 2006-09-12 | 2008-03-27 | Nippon Telegr & Teleph Corp <Ntt> | Ｉｉｉ族窒化物半導体素子およびその作製方法 |
| JP5274785B2 (ja) * | 2007-03-29 | 2013-08-28 | 日本碍子株式会社 | ＡｌＧａＮ結晶層の形成方法 |
| JPWO2011161975A1 (ja) * | 2010-06-25 | 2013-08-19 | Ｄｏｗａエレクトロニクス株式会社 | エピタキシャル成長基板及び半導体装置、エピタキシャル成長方法 |
| JP2012015304A (ja) | 2010-06-30 | 2012-01-19 | Sumitomo Electric Ind Ltd | 半導体装置 |
| KR101855063B1 (ko) * | 2011-06-24 | 2018-05-04 | 엘지이노텍 주식회사 | 발광 소자 |
| JP2014003056A (ja) * | 2012-06-15 | 2014-01-09 | Nagoya Institute Of Technology | 半導体積層構造およびこれを用いた半導体素子 |
| JP2014022685A (ja) * | 2012-07-23 | 2014-02-03 | Nagoya Institute Of Technology | 半導体積層構造およびこれを用いた半導体素子 |
| JP6266490B2 (ja) | 2014-11-04 | 2018-01-24 | エア・ウォーター株式会社 | 半導体装置およびその製造方法 |
| CN112820773B (zh) * | 2019-11-18 | 2024-05-07 | 联华电子股份有限公司 | 一种高电子迁移率晶体管 |
| KR102739129B1 (ko) * | 2022-05-06 | 2024-12-05 | 삼성전자주식회사 | 보호막을 포함하는 반도체 소자 및 전자 장치의 제조 방법 |
-
2001
- 2001-08-20 JP JP2001248738A patent/JP4058595B2/ja not_active Expired - Fee Related
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