JP4058595B2 - 半導体発光素子及びその製造方法 - Google Patents
半導体発光素子及びその製造方法 Download PDFInfo
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- JP4058595B2 JP4058595B2 JP2001248738A JP2001248738A JP4058595B2 JP 4058595 B2 JP4058595 B2 JP 4058595B2 JP 2001248738 A JP2001248738 A JP 2001248738A JP 2001248738 A JP2001248738 A JP 2001248738A JP 4058595 B2 JP4058595 B2 JP 4058595B2
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- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- substrate
- light emitting
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 159
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims description 94
- 239000000872 buffer Substances 0.000 claims description 74
- 229910002601 GaN Inorganic materials 0.000 claims description 61
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 19
- -1 nitride compound Chemical class 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 18
- 230000000694 effects Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- 230000005641 tunneling Effects 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 16
- 229910052594 sapphire Inorganic materials 0.000 description 13
- 239000010980 sapphire Substances 0.000 description 13
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 239000006173 Good's buffer Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001248738A JP4058595B2 (ja) | 2001-08-20 | 2001-08-20 | 半導体発光素子及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001248738A JP4058595B2 (ja) | 2001-08-20 | 2001-08-20 | 半導体発光素子及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003060234A JP2003060234A (ja) | 2003-02-28 |
| JP2003060234A5 JP2003060234A5 (enExample) | 2005-09-08 |
| JP4058595B2 true JP4058595B2 (ja) | 2008-03-12 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001248738A Expired - Fee Related JP4058595B2 (ja) | 2001-08-20 | 2001-08-20 | 半導体発光素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4058595B2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4725763B2 (ja) * | 2003-11-21 | 2011-07-13 | サンケン電気株式会社 | 半導体素子形成用板状基体の製造方法 |
| RU2326993C2 (ru) * | 2006-07-25 | 2008-06-20 | Самсунг Электро-Меканикс Ко., Лтд. | Способ выращивания монокристалла нитрида на кремниевой пластине, нитридный полупроводниковый светоизлучающий диод, изготовленный с его использованием, и способ такого изготовления |
| JP2008071832A (ja) * | 2006-09-12 | 2008-03-27 | Nippon Telegr & Teleph Corp <Ntt> | Ｉｉｉ族窒化物半導体素子およびその作製方法 |
| JP5274785B2 (ja) * | 2007-03-29 | 2013-08-28 | 日本碍子株式会社 | ＡｌＧａＮ結晶層の形成方法 |
| US9006865B2 (en) | 2010-06-25 | 2015-04-14 | Dowa Electronics Materials Co., Ltd. | Epitaxial growth substrate, semiconductor device, and epitaxial growth method |
| JP2012015304A (ja) * | 2010-06-30 | 2012-01-19 | Sumitomo Electric Ind Ltd | 半導体装置 |
| KR101855063B1 (ko) * | 2011-06-24 | 2018-05-04 | 엘지이노텍 주식회사 | 발광 소자 |
| JP2014003056A (ja) * | 2012-06-15 | 2014-01-09 | Nagoya Institute Of Technology | 半導体積層構造およびこれを用いた半導体素子 |
| JP2014022685A (ja) * | 2012-07-23 | 2014-02-03 | Nagoya Institute Of Technology | 半導体積層構造およびこれを用いた半導体素子 |
| JP6266490B2 (ja) | 2014-11-04 | 2018-01-24 | エア・ウォーター株式会社 | 半導体装置およびその製造方法 |
| CN112820773B (zh) * | 2019-11-18 | 2024-05-07 | 联华电子股份有限公司 | 一种高电子迁移率晶体管 |
| KR102739129B1 (ko) * | 2022-05-06 | 2024-12-05 | 삼성전자주식회사 | 보호막을 포함하는 반도체 소자 및 전자 장치의 제조 방법 |
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2001
- 2001-08-20 JP JP2001248738A patent/JP4058595B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003060234A (ja) | 2003-02-28 |
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