JP5319431B2 - 窒化物半導体素子及びその製造方法、並びに、半導体装置 - Google Patents
窒化物半導体素子及びその製造方法、並びに、半導体装置 Download PDFInfo
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- JP5319431B2 JP5319431B2 JP2009158199A JP2009158199A JP5319431B2 JP 5319431 B2 JP5319431 B2 JP 5319431B2 JP 2009158199 A JP2009158199 A JP 2009158199A JP 2009158199 A JP2009158199 A JP 2009158199A JP 5319431 B2 JP5319431 B2 JP 5319431B2
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- 150000004767 nitrides Chemical class 0.000 title claims description 296
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- 229910002704 AlGaN Inorganic materials 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 31
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 77
- 238000005401 electroluminescence Methods 0.000 description 69
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- 230000000694 effects Effects 0.000 description 22
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
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- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 101150096839 Fcmr gene Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
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Description
10a 成長主面
12 下部クラッド層(窒化物半導体層、n型半導体層)
13 下部ガイド層(n型半導体層)
14 活性層
14a 井戸層
14b 障壁層
15 キャリアブロック層(p型半導体層)
16 上部ガイド層(p型半導体層)
17 上部クラッド層(p型半導体層)
18 コンタクト層(p型半導体層)
19 リッジ部
20 絶縁層
21 p側電極
22 n側電極
23 メタライズ層
30 共振器面
30a 光出射面
30b 光反射面
100 窒化物半導体レーザ素子(窒化物半導体素子)
110 サブマウント
120 ステム
130 ワイヤ
135 キャップ
150 半導体レーザ装置(半導体装置)
Claims (11)
- 成長主面を有する窒化物半導体基板と、
前記窒化物半導体基板の成長主面上に形成された窒化物半導体層とを備え、
前記成長主面は、m面に対して、a軸方向及びc軸方向にオフ角度を有する面からなり、
前記a軸方向のオフ角度が、前記c軸方向のオフ角度より大きいとともに、
前記a軸方向のオフ角度の絶対値は1度よりも大きく10度以下であり、
前記窒化物半導体層は、Alを含むとともに、前記成長主面と接するように形成されていることを特徴とする、窒化物半導体素子。 - 前記c軸方向のオフ角度の絶対値が、0.1度より大きいことを特徴とする、請求項1に記載の窒化物半導体素子。
- 前記窒化物半導体基板は、GaNからなり、
前記窒化物半導体層は、AlGaNからなることを特徴とする、請求項1または2に記載の窒化物半導体素子。 - 前記窒化物半導体層上には、量子井戸構造を有する活性層が形成されており、
前記活性層は、1層の井戸層を有することを特徴とする、請求項1〜3のいずれか1項に記載の窒化物半導体素子。 - 前記窒化物半導体層上には、量子井戸構造を有する活性層が形成されており、
前記活性層は、2層の井戸層を有することを特徴とする、請求項1〜3のいずれか1項に記載の窒化物半導体素子。 - 前記窒化物半導体層上には、量子井戸構造を有する活性層が形成されており、
前記活性層は、Inを含む窒化物半導体からなる井戸層を有し、
前記井戸層のIn組成比が、0.15以上0.45以下であることを特徴とする、請求項1〜5のいずれか1項に記載の窒化物半導体素子。 - 前記活性層は、Alを含む窒化物半導体からなる障壁層を有することを特徴とする、請求項4〜6のいずれか1項に記載の窒化物半導体素子。
- 前記障壁層は、AlGaNからなることを特徴とする、請求項7に記載の窒化物半導体素子。
- m面に対してa軸方向及びc軸方向にオフ角度を有し、前記a軸方向のオフ角度が前記c軸方向のオフ角度より大きい面からなる成長主面を含む窒化物半導体基板を準備する工程と、
前記窒化物半導体基板の成長主面上に、エピタキシャル成長法を用いて、Alを含む窒化物半導体層を前記成長主面と接するように形成する工程とを備え、
前記a軸方向のオフ角度の絶対値は1度よりも大きく10度以下であることを特徴とする、窒化物半導体素子の製造方法。 - 前記c軸方向のオフ角度の絶対値が、0.1度より大きいことを特徴とする、請求項9に記載の窒化物半導体素子の製造方法。
- 請求項1〜8のいずれか1項に記載の窒化物半導体素子を備えることを特徴とする、半導体装置。
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JP2009158199A JP5319431B2 (ja) | 2009-07-02 | 2009-07-02 | 窒化物半導体素子及びその製造方法、並びに、半導体装置 |
US12/801,910 US20110001126A1 (en) | 2009-07-02 | 2010-07-01 | Nitride semiconductor chip, method of fabrication thereof, and semiconductor device |
CN2010102219797A CN101944480A (zh) | 2009-07-02 | 2010-07-02 | 氮化物半导体芯片及其制造方法以及半导体器件 |
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KR101843513B1 (ko) * | 2012-02-24 | 2018-03-29 | 서울바이오시스 주식회사 | 질화갈륨계 발광 다이오드 |
JP2014167948A (ja) * | 2013-01-30 | 2014-09-11 | Mitsubishi Chemicals Corp | 発光ダイオード素子、発光ダイオード素子の製造方法および発光装置 |
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JP4700464B2 (ja) * | 2005-09-30 | 2011-06-15 | 昭和電工株式会社 | 化合物半導体素子 |
JP2007184503A (ja) * | 2006-01-10 | 2007-07-19 | Mitsubishi Chemicals Corp | 半導体部材及びその製造方法 |
JP2008118049A (ja) * | 2006-11-07 | 2008-05-22 | Rohm Co Ltd | GaN系半導体発光素子 |
JP2008258503A (ja) * | 2007-04-06 | 2008-10-23 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 |
JP4924185B2 (ja) * | 2007-04-27 | 2012-04-25 | 住友電気工業株式会社 | 窒化物半導体発光素子 |
JP2008285364A (ja) * | 2007-05-17 | 2008-11-27 | Sumitomo Electric Ind Ltd | GaN基板、それを用いたエピタキシャル基板及び半導体発光素子 |
KR101375332B1 (ko) * | 2007-08-16 | 2014-03-19 | 삼성디스플레이 주식회사 | 반사판과 이를 채용한 디스플레이 및 반사광 분포 제어방법 |
JP5232993B2 (ja) * | 2007-11-07 | 2013-07-10 | フューチャー ライト リミテッド ライアビリティ カンパニー | 窒化物系半導体発光素子およびその製造方法 |
JP2009094360A (ja) * | 2007-10-10 | 2009-04-30 | Rohm Co Ltd | 半導体レーザダイオード |
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