JP4927121B2 - 窒化物半導体ウェハ、窒化物半導体素子および窒化物半導体素子の製造方法 - Google Patents
窒化物半導体ウェハ、窒化物半導体素子および窒化物半導体素子の製造方法 Download PDFInfo
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- JP4927121B2 JP4927121B2 JP2009130741A JP2009130741A JP4927121B2 JP 4927121 B2 JP4927121 B2 JP 4927121B2 JP 2009130741 A JP2009130741 A JP 2009130741A JP 2009130741 A JP2009130741 A JP 2009130741A JP 4927121 B2 JP4927121 B2 JP 4927121B2
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- H01S5/3203—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth on non-planar substrates to create thickness or compositional variations
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- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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Description
図1は、本発明の第1実施形態による窒化物半導体ウェハの一部を模式的に示した断面図である。図2は、窒化物半導体の結晶構造を説明するための模式図である。図3は、基板のオフ角度を説明するための模式図である。図4〜図9は、本発明の第1実施形態による窒化物半導体ウェハを説明するための図である。まず、図1〜図9を参照して、窒化物半導体レーザ素子(窒化物半導体素子)を含む、本発明の第1実施形態による窒化物半導体ウェハ50について説明する。なお、第1実施形態では、本発明の窒化物半導体素子を、窒化物半導体レーザ素子に適用した例について説明する。
図37は、本発明の第2実施形態による窒化物半導体ウェハおよび窒化物半導体レーザ素子を説明するための断面図である。図37は、第2実施形態による窒化物半導体ウェハおよび窒化物半導体レーザ素子に用いられる基板の一部の断面を示している。次に、図1、図7および図37を参照して、本発明の第2実施形態による窒化物半導体ウェハおよび窒化物半導体レーザ素子について説明する。なお、第2実施形態では、本発明の窒化物半導体素子を、窒化物半導体レーザ素子に適用した例について説明する。
図42は、本発明の第3実施形態による発光ダイオード素子を模式的に示した断面図である。次に、図21および図42を参照して、第3実施形態では、本発明の窒化物半導体素子を、発光ダイオード素子に適用した例について説明する。
2a 底面部
2b 側面部
3 掘り込み領域
4 非掘り込み領域
5 層厚傾斜領域
6 発光部形成領域
10 n型GaN基板(窒化物半導体基板)
10a 成長主面
20 窒化物半導体層
20a n型窒化物半導体層
20b p型窒化物半導体層
21 n型クラッド層
22 n型ガイド層
23 活性層
23a 井戸層
23b 障壁層
24 キャリアブロック層(Alを含むp型半導体層)
25 p型ガイド層
26 p型クラッド層
27 p型コンタクト層
28 リッジ部
29 光導波領域
30 絶縁層
31、131 p側電極
32 n側電極
40 共振器面
40a 光出射面
40b 光反射面
50 窒化物半導体ウェハ
100 窒化物半導体レーザ素子(窒化物半導体素子)
131a、131b p側電極
160、161、162 成長抑制膜
200 発光ダイオード素子(窒化物半導体素子)
Claims (22)
- m面に対してa軸方向にオフ角度を有する面を成長主面とする窒化物半導体基板と、
前記窒化物半導体基板の前記成長主面上に形成された窒化物半導体層とを備え、
前記窒化物半導体基板は、前記成長主面から厚み方向に掘り込まれた掘り込み領域と、掘り込まれていない領域である非掘り込み領域とを含み、
前記窒化物半導体層は、前記非掘り込み領域上に形成されるとともに前記掘り込み領域に近づくにしたがって層厚が傾斜的に減少する層厚傾斜領域を含むことを特徴とする、窒化物半導体ウェハ。 - 前記掘り込み領域は、平面的に見て、a軸方向と交差する方向に延びるように形成されていることを特徴とする、請求項1に記載の窒化物半導体ウェハ。
- 前記掘り込み領域に、窒化物半導体の成長を抑制する成長抑制膜が形成されていることを特徴とする、請求項1または2に記載の窒化物半導体ウェハ。
- 請求項1〜3のいずれか1項に記載の窒化物半導体ウェハを用いて形成されたことを特徴とする、窒化物半導体素子。
- m面に対してa軸方向にオフ角度を有する面を成長主面とする窒化物半導体基板と、
前記窒化物半導体基板の前記成長主面上に形成された窒化物半導体層とを備え、
前記窒化物半導体基板は、前記成長主面から厚み方向に掘り込まれた掘り込み領域と、掘り込まれていない領域である非掘り込み領域とを含み、
前記窒化物半導体層は、前記非掘り込み領域上に形成されるとともに前記掘り込み領域に近づくにしたがって層厚が傾斜的に減少する層厚傾斜領域を含むことを特徴とする、窒化物半導体素子。 - 前記掘り込み領域は、平面的に見て、a軸方向と交差する方向に延びるように形成されていることを特徴とする、請求項5に記載の窒化物半導体素子。
- 前記掘り込み領域に、窒化物半導体の成長を抑制する成長抑制膜が形成されていることを特徴とする、請求項5または6に記載の窒化物半導体素子。
- 前記窒化物半導体基板における前記a軸方向のオフ角度の絶対値が、0.1度より大きいことを特徴とする、請求項5〜7のいずれか1項に記載の窒化物半導体素子。
- 前記窒化物半導体基板における前記a軸方向のオフ角度の絶対値が、0.5度以上であることを特徴とする、請求項8に記載の窒化物半導体素子。
- 前記窒化物半導体基板は、a軸方向に加えて、c軸方向にもオフ角度を有しており、
前記a軸方向のオフ角度が、前記c軸方向のオフ角度より大きいことを特徴とする、請求項5〜9のいずれか1項に記載の窒化物半導体素子。 - 前記窒化物半導体層は、Inを含む活性層を有し、
前記活性層のIn組成比が、0.15以上0.45以下であることを特徴とする、請求項5〜10のいずれか1項に記載の窒化物半導体素子。 - 前記窒化物半導体層は、Alを含むp型半導体層を有し、
前記p型半導体層のAl組成比が、0.08以上0.35以下であることを特徴とする、請求項5〜11のいずれか1項に記載の窒化物半導体素子。 - 前記窒化物半導体層は、光導波領域を含み、
前記光導波領域は、前記非掘り込み領域上に位置していることを特徴とする、請求項5〜12のいずれか1項に記載の窒化物半導体素子。 - 前記光導波領域は、平面的に見て、c軸方向に延びるように形成されていることを特徴とする、請求項13に記載の窒化物半導体素子。
- 前記窒化物半導体層は、発光領域を含み、
前記発光領域は、前記非掘り込み領域上に位置していることを特徴とする、請求項5〜12のいずれか1項に記載の窒化物半導体素子。 - 前記窒化物半導体基板は、GaNからなることを特徴とする、請求項5〜15のいずれか1項に記載の窒化物半導体素子。
- m面に対してa軸方向にオフ角度を有する面を成長主面とする窒化物半導体基板を準備する工程と、
前記窒化物半導体基板の前記成長主面の所定領域を厚み方向に掘り込むことによって、前記窒化物半導体基板に、凹状に掘り込まれた掘り込み領域を形成する工程と、
前記窒化物半導体基板の前記成長主面上に窒化物半導体層を形成する工程とを備え、
前記掘り込み領域を形成する工程は、前記成長主面における前記掘り込み領域とは異なる領域に、掘り込まれていない領域である非掘り込み領域を形成する工程を含み、
前記窒化物半導体層を形成する工程は、前記非掘り込み領域上の領域に、前記掘り込み領域に近づくにしたがって層厚が傾斜的に減少する層厚傾斜領域を形成する工程を含むことを特徴とする、窒化物半導体素子の製造方法。 - 前記掘り込み領域を形成する工程は、前記掘り込み領域を、平面的に見て、a軸方向と交差する方向に延びるように形成する工程を含むことを特徴とする、請求項17に記載の窒化物半導体素子の製造方法。
- 前記掘り込み領域に、窒化物半導体の成長を抑制する成長抑制膜を形成する工程をさらに備えることを特徴とする、請求項17または18に記載の窒化物半導体素子の製造方法。
- 前記窒化物半導体基板における前記a軸方向のオフ角度の絶対値が、0.1度より大きいことを特徴とする、請求項17〜19のいずれか1項に記載の窒化物半導体素子の製造方法。
- 前記窒化物半導体基板における前記a軸方向のオフ角度の絶対値が、0.5度以上であることを特徴とする、請求項20に記載の窒化物半導体素子の製造方法。
- 前記窒化物半導体基板は、a軸方向に加えて、c軸方向にもオフ角度を有しており、
前記a軸方向のオフ角度が、前記c軸方向のオフ角度より大きいことを特徴とする、請求項17〜21のいずれか1項に記載の窒化物半導体素子の製造方法。
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