JP4540347B2 - 窒化物半導体レーザ素子及び、その製造方法 - Google Patents
窒化物半導体レーザ素子及び、その製造方法 Download PDFInfo
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- JP4540347B2 JP4540347B2 JP2004000328A JP2004000328A JP4540347B2 JP 4540347 B2 JP4540347 B2 JP 4540347B2 JP 2004000328 A JP2004000328 A JP 2004000328A JP 2004000328 A JP2004000328 A JP 2004000328A JP 4540347 B2 JP4540347 B2 JP 4540347B2
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- 239000004065 semiconductor Substances 0.000 title claims description 166
- 150000004767 nitrides Chemical class 0.000 title claims description 143
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 230000012010 growth Effects 0.000 claims description 133
- 239000000758 substrate Substances 0.000 claims description 64
- 238000005530 etching Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 description 42
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 40
- 239000010409 thin film Substances 0.000 description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
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- 238000005259 measurement Methods 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
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- 229910052594 sapphire Inorganic materials 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 239000011259 mixed solution Substances 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
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- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/320225—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth polar orientation
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Description
このことにより、クラックの発生を防止し、併せて、前記掘り込み領域の底面成長部からの這い上がり成長を抑制し、側面成長部の膜厚を抑える。
11 窒化物半導体成長層
12 レーザストライプ
13 SiO2
14 p型電極
15 n型電極
16 掘り込み領域
17 上面成長部
18 側面成長部
19 底面成長部
60 n型GaN基板
70 n型GaN層
71 n型Al0.062Ga0.938N第1クラッド層
72 n型Al0.1Ga0.9N第2クラッド層
73 n型Al0.062Ga0.938N第3クラッド層
74 n型GaNガイド層
75 多重量子井戸活性層
76 p型Al0.3Ga0.7N蒸発防止層
77 p型GaNガイド層
78 p型Al0.062Ga0.938Nクラッド層
79 p型GaNコンタクト層
90 上面成長部
91 側面成長部
92 底面成長部
93 掘り込まれていない領域
94 掘り込み領域の側面部
95 掘り込み領域の底面部
Claims (4)
- 少なくとも表面側の一部が窒化物半導体である窒化物半導体基板と、該窒化物半導体基板の表面に形成される窒化物半導体成長層と、を備える窒化物半導体発光素子において、
前記窒化物半導体基板の表面に、断面形状が逆テーパ形状の凹部となる掘り込み領域が形成され、
前記凹部の断面形状において、前記凹部の側面部と前記凹部の底面部延長線との間の角度が140度以下であり、
前記窒化物半導体成長層に形成される発光部分となるレーザストライプが、前記レーザストライプの中央部と前記掘り込み領域の端との距離が20μm以上となる位置に形成されていることを特徴とする窒化物半導体発光素子。 - 前記窒化物半導体基板の主面方位がC面{0001}、A面{11−20}、R面{1−102}、M面{1−100}、又は{1−101}面であることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記窒化物半導体基板の主面が結晶面から2度以内のオフ角度を有することを特徴とする請求項2に記載の窒化物半導体発光素子。
- 少なくとも表面側の一部が窒化物半導体である窒化物半導体基板と、該窒化物半導体基板の表面に形成される窒化物半導体成長層と、を備える窒化物半導体発光素子の製造方法において、
前記窒化物半導体基板をエッチングして掘り込み領域を形成するする第1ステップと、
該第1ステップで得られた前記窒化物半導体基板に前記窒化物半導体成長層を積層する第2ステップと、
発光部分となるレーザストライプを前記窒化物半導体成長層に形成する第3ステップと、
を備え、前記掘り込み領域は、断面形状が逆テーパ形状の凹部であり、
前記凹部の断面形状において、前記凹部の側面部と前記凹部の底面部延長線との間の角度が140度以下であり、
前記レーザストライプは、前記レーザストライプの中央部と前記掘り込み領域の端との距離が20μm以上となる位置に形成されることを特徴とする窒化物半導体発光素子の製造方法。
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JP2004000328A JP4540347B2 (ja) | 2004-01-05 | 2004-01-05 | 窒化物半導体レーザ素子及び、その製造方法 |
US11/022,892 US20050151153A1 (en) | 2004-01-05 | 2004-12-28 | Nitride semiconductor laser device and method for fabrication thereof |
CNB2005100039676A CN100440657C (zh) | 2004-01-05 | 2005-01-05 | 氮化物半导体激光器件及其制造方法 |
US11/877,551 US7529283B2 (en) | 2004-01-05 | 2007-10-23 | Nitride semiconductor laser device and method for fabrication thereof |
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JP2004000328A JP4540347B2 (ja) | 2004-01-05 | 2004-01-05 | 窒化物半導体レーザ素子及び、その製造方法 |
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JP2010091089A Division JP5203412B2 (ja) | 2010-04-12 | 2010-04-12 | 窒化物半導体発光素子及びその製造方法 |
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JP4540347B2 true JP4540347B2 (ja) | 2010-09-08 |
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CN1638220A (zh) | 2005-07-13 |
JP2005197347A (ja) | 2005-07-21 |
US7529283B2 (en) | 2009-05-05 |
CN100440657C (zh) | 2008-12-03 |
US20050151153A1 (en) | 2005-07-14 |
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