JP2005197347A - 窒化物半導体レーザ素子及び、その製造方法 - Google Patents
窒化物半導体レーザ素子及び、その製造方法 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 199
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 40
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
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Abstract
【解決手段】 本発明の窒化物半導体発光素子及びその製造方法は、窒化物半導体基板の表面に、欠陥密度が106cm-2以下の低欠陥領域と、凹部が形成された掘り込み領域とが設けられ、前記凹部の断面形状において、前記凹部の側面部と前記凹部の底面部延長線との間の角度であるエッチング角度θが、75度≦θ≦140度であることを特徴とする。このことにより、クラックの発生を防止し、併せて、前記掘り込み領域の底面成長部からの這い上がり成長を抑制し、側面成長部の膜厚を抑えることで、表面平坦性の良好な窒化物半導体成長層が形成された窒化物半導体レーザ素子を高い歩留まりで得ることができる。
【選択図】 図1
Description
11 窒化物半導体成長層
12 レーザストライプ
13 SiO2
14 p型電極
15 n型電極
16 掘り込み領域
17 上面成長部
18 側面成長部
19 底面成長部
60 n型GaN基板
70 n型GaN層
71 n型Al0.062Ga0.938N第1クラッド層
72 n型Al0.1Ga0.9N第2クラッド層
73 n型Al0.062Ga0.938N第3クラッド層
74 n型GaNガイド層
75 多重量子井戸活性層
76 p型Al0.3Ga0.7N蒸発防止層
77 p型GaNガイド層
78 p型Al0.062Ga0.938Nクラッド層
79 p型GaNコンタクト層
90 上面成長部
91 側面成長部
92 底面成長部
93 掘り込まれていない領域
94 掘り込み領域の側面部
95 掘り込み領域の底面部
Claims (16)
- 少なくとも表面側の一部が窒化物半導体である窒化物半導体基板と、該窒化物半導体基板の表面に形成される窒化膜半導体成長層と、を備える窒化物半導体発光素子において、
前記窒化物半導体基板の表面に、欠陥密度が106cm-2以下の低欠陥領域と、凹部が形成された掘り込み領域とが設けられ、
前記凹部の断面形状において、前記凹部の側面部と前記凹部の底面部延長線との間の角度であるエッチング角度θが、75度≦θ≦140度であることを特徴とする窒化物半導体発光素子。 - 前記エッチング角度θが、85度≦θ≦140度であることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記窒化膜半導体成長層において、前記窒化物半導体基板の表面と接する層がGaN層であり、当該GaN層の層厚が2μm以下であることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記窒化膜半導体成長層において、前記窒化物半導体基板の表面と接する層がAlGaN層であることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記掘り込み領域の掘り込み深さが1μm以上30μm以下であることを特徴とする請求項1〜請求項4のいずれかに記載の窒化物半導体発光素子。
- 前記窒化物半導体成長層に形成される発光部分となるレーザストライプが前記掘り込み領域以外の前記低欠陥領域上に形成されていることを特徴とする請求項1〜請求項5のいずれかに記載の窒化物半導体発光素子。
- 前記レーザストライプが前記掘り込み領域から20μm以上離れた位置に形成されることを特徴とする請求項6に記載の窒化物半導体発光素子。
- 前記掘り込み領域の側面に形成される前記窒化膜半導体成長層の一部である側面成長部の膜厚が、20μm以下であることを特徴とする請求項1〜請求項7のいずれかに記載の窒化物半導体発光素子。
- 少なくとも表面側の一部が前記窒化物半導体であるとともにその表面に欠陥密度が106cm-2以下の前記低欠陥領域を含む前記窒化物半導体基板と、該窒化物半導体基板の表面に形成される前記窒化膜半導体成長層と、を備える窒化物半導体発光素子の製造方法において、
前記窒化物半導体基板をエッチングして掘り込み領域を形成するする第1ステップと、
該第1ステップで得られた前記窒化物半導体基板に前記窒化物半導体成長層を積層する第2ステップと
を備え、
前記第1ステップにおいて、前記掘り込み領域による凹部の側面と該凹部の底面部延長線との間の角度であるエッチング角度θを75度≦θ≦140度とすることを特徴とする窒化物半導体発光素子の製造方法。 - 前記第1ステップにおいて、前記エッチング角度θを85度≦θ≦140度とすることを特徴とする請求項9に記載の窒化物半導体発光素子の製造方法。
- 前記第2ステップにおいて、前記窒化物半導体基板に接する層を2μm以下のGaN層とすることを特徴とする請求項9に記載の窒化物半導体発光素子の製造方法。
- 前記第2ステップにおいて、前記窒化物半導体基板に接する層をAlGaN層とすることを特徴とする請求項9に記載の窒化物半導体発光素子の製造方法。
- 前記窒化物半導体成長層に形成される発光部分となるレーザストライプを前記掘り込み領域以外の前記低欠陥領域上に形成することを特徴とする請求項9〜請求項12のいずれかに記載の窒化物半導体レーザ素子の製造方法。
- 前記レーザストライプが前記掘り込み領域から20μm以上離れた位置に形成されることを特徴とする請求項13に記載の窒化物半導体発光素子の製造法。
- 前記掘り込み領域の側面に形成される前記窒化膜半導体成長層の一部である側面成長部の膜厚が、20μm以下であることを特徴とする請求項9〜請求項14のいずれかに記載の窒化物半導体発光素子の製造方法。
- 前記第1ステップにおいて、まず、前記窒化物半導体基板に窒化物半導体層を成長させた後に、前記掘り込み領域を形成することを特徴とする請求項9〜請求項15のいずれかに記載の窒化物半導体発光素子の製造法。
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US11/022,892 US20050151153A1 (en) | 2004-01-05 | 2004-12-28 | Nitride semiconductor laser device and method for fabrication thereof |
CNB2005100039676A CN100440657C (zh) | 2004-01-05 | 2005-01-05 | 氮化物半导体激光器件及其制造方法 |
US11/877,551 US7529283B2 (en) | 2004-01-05 | 2007-10-23 | Nitride semiconductor laser device and method for fabrication thereof |
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Cited By (12)
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JP2005294416A (ja) * | 2004-03-31 | 2005-10-20 | Sanyo Electric Co Ltd | 窒化物系半導体素子の製造方法及び窒化物系半導体素子 |
JP2006066583A (ja) * | 2004-08-26 | 2006-03-09 | Sharp Corp | 窒化物半導体発光素子およびその製造方法 |
JP2006303471A (ja) * | 2005-03-24 | 2006-11-02 | Sanyo Electric Co Ltd | 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子 |
JP2008060375A (ja) * | 2006-08-31 | 2008-03-13 | Sanyo Electric Co Ltd | 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子 |
JP2009032891A (ja) * | 2007-07-26 | 2009-02-12 | Sanyo Electric Co Ltd | 窒化物系半導体素子の製造方法 |
JP2010034305A (ja) * | 2008-07-29 | 2010-02-12 | Panasonic Corp | 半導体レーザ装置 |
JP2010161426A (ja) * | 2005-03-24 | 2010-07-22 | Sanyo Electric Co Ltd | 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子 |
JP2010171461A (ja) * | 2010-04-26 | 2010-08-05 | Sanyo Electric Co Ltd | 窒化物系半導体素子の製造方法及び窒化物系半導体素子 |
JP2011035125A (ja) * | 2009-07-31 | 2011-02-17 | Sharp Corp | 窒化物半導体ウェハ、窒化物半導体素子および窒化物半導体素子の製造方法 |
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US20080080578A1 (en) | 2008-04-03 |
JP4540347B2 (ja) | 2010-09-08 |
US20050151153A1 (en) | 2005-07-14 |
US7529283B2 (en) | 2009-05-05 |
CN100440657C (zh) | 2008-12-03 |
CN1638220A (zh) | 2005-07-13 |
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