WO2008155958A1 - 半導体発光素子及び半導体発光素子の製造方法 - Google Patents

半導体発光素子及び半導体発光素子の製造方法 Download PDF

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Publication number
WO2008155958A1
WO2008155958A1 PCT/JP2008/058717 JP2008058717W WO2008155958A1 WO 2008155958 A1 WO2008155958 A1 WO 2008155958A1 JP 2008058717 W JP2008058717 W JP 2008058717W WO 2008155958 A1 WO2008155958 A1 WO 2008155958A1
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WO
WIPO (PCT)
Prior art keywords
layer
emitting device
light
semiconductor light
semiconductor layer
Prior art date
Application number
PCT/JP2008/058717
Other languages
English (en)
French (fr)
Inventor
Yasuo Nakanishi
Shunji Nakata
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to US12/452,044 priority Critical patent/US20100117055A1/en
Priority to JP2009520396A priority patent/JPWO2008155958A1/ja
Publication of WO2008155958A1 publication Critical patent/WO2008155958A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Abstract

　異なる色の光を充分に発光可能な半導体発光素子を提供する。 　半導体発光素子（１）は、基板（２）と、基板（２）上に形成された半導体層（３）とを備えている。半導体層（３）は、基板（２）側から順に、バッファ層（１１）、ｎ型半導体層（１２）、発光層（１３）、及び、ｐ型半導体層（１４）が積層されている。発光層（１３）は、複数の井戸層（２１ｎ）と、複数のバリア層（２２ｍ）とが交互に積層されたＭＱＷ構造を有する。ｐ型半導体層（１４）に最も近い井戸層（２１１）は、約４２０ｎｍ～約４７０ｎｍの波長を有する青色光を発光する。井戸層（２１１）は、ノンドープのＩｎＸ１Ｇａ１－Ｘ１Ｎ（０．０５≦Ｘ１＜０．２）からなる。ｐ型半導体層（１４）に２番目に近い井戸層（２１２）は、約５２０ｎｍ～約６５０ｎｍの波長を有する緑色光を発光する。井戸層（２１２）は、ノンドープのＩｎＸ２Ｇａ１－Ｘ２Ｎ（０．２≦Ｘ２≦０．３）からなる。
PCT/JP2008/058717 2007-06-15 2008-05-12 半導体発光素子及び半導体発光素子の製造方法 WO2008155958A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/452,044 US20100117055A1 (en) 2007-06-15 2008-05-12 Semiconductor light-emitting device and method for manufacturing semiconductor light-emitting device
JP2009520396A JPWO2008155958A1 (ja) 2007-06-15 2008-05-12 半導体発光素子及び半導体発光素子の製造方法

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2007158535 2007-06-15
JP2007158525 2007-06-15
JP2007-158525 2007-06-15
JP2007-158535 2007-06-15
JP2008-009344 2008-01-18
JP2008009341 2008-01-18
JP2008-009341 2008-01-18
JP2008009344 2008-01-18

Publications (1)

Publication Number Publication Date
WO2008155958A1 true WO2008155958A1 (ja) 2008-12-24

Family

ID=40156118

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058717 WO2008155958A1 (ja) 2007-06-15 2008-05-12 半導体発光素子及び半導体発光素子の製造方法

Country Status (4)

Country Link
US (1) US20100117055A1 (ja)
JP (1) JPWO2008155958A1 (ja)
TW (1) TW200901525A (ja)
WO (1) WO2008155958A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219376A (ja) * 2009-03-18 2010-09-30 Sharp Corp 窒化物半導体発光素子の製造方法
JP2012238787A (ja) * 2011-05-13 2012-12-06 Toshiba Corp 半導体発光素子及びウェーハ
US8344413B2 (en) 2009-05-29 2013-01-01 Sharp Kabushiki Kaisha Nitride semiconductor wafer, nitride semiconductor chip, and method of manufacture of nitride semiconductor chip
US8664688B2 (en) 2009-03-27 2014-03-04 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device
JP2017045787A (ja) * 2015-08-25 2017-03-02 シャープ株式会社 窒化物半導体発光素子
KR101916020B1 (ko) * 2011-07-11 2018-11-07 엘지이노텍 주식회사 발광소자, 발광 소자 제조방법 및 발광 소자 패키지
JP2020068311A (ja) * 2018-10-25 2020-04-30 日亜化学工業株式会社 発光素子

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009158647A (ja) * 2007-12-26 2009-07-16 Sharp Corp 窒化物系半導体レーザ素子およびその製造方法
US20110001126A1 (en) * 2009-07-02 2011-01-06 Sharp Kabushiki Kaisha Nitride semiconductor chip, method of fabrication thereof, and semiconductor device
US20110042646A1 (en) * 2009-08-21 2011-02-24 Sharp Kabushiki Kaisha Nitride semiconductor wafer, nitride semiconductor chip, method of manufacture thereof, and semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11135838A (ja) * 1997-10-20 1999-05-21 Ind Technol Res Inst 白色発光ダイオード及びその製造方法
JP2000164512A (ja) * 1998-11-26 2000-06-16 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体層の成長方法、半導体装置の製造方法および半導体発光素子の製造方法
JP2001156328A (ja) * 1999-11-30 2001-06-08 Hitachi Cable Ltd 発光素子用エピタキシャルウェハおよび発光素子
JP2001168384A (ja) * 1999-12-08 2001-06-22 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2004179493A (ja) * 2002-11-28 2004-06-24 Rohm Co Ltd 半導体発光素子
JP2006303259A (ja) * 2005-04-22 2006-11-02 Ishikawajima Harima Heavy Ind Co Ltd 窒化物半導体発光素子と窒化物半導体の成長方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4396790B2 (ja) * 1999-12-14 2010-01-13 Ｎｏｋ株式会社 オイルシール
JP2007281257A (ja) * 2006-04-07 2007-10-25 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11135838A (ja) * 1997-10-20 1999-05-21 Ind Technol Res Inst 白色発光ダイオード及びその製造方法
JP2000164512A (ja) * 1998-11-26 2000-06-16 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体層の成長方法、半導体装置の製造方法および半導体発光素子の製造方法
JP2001156328A (ja) * 1999-11-30 2001-06-08 Hitachi Cable Ltd 発光素子用エピタキシャルウェハおよび発光素子
JP2001168384A (ja) * 1999-12-08 2001-06-22 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2004179493A (ja) * 2002-11-28 2004-06-24 Rohm Co Ltd 半導体発光素子
JP2006303259A (ja) * 2005-04-22 2006-11-02 Ishikawajima Harima Heavy Ind Co Ltd 窒化物半導体発光素子と窒化物半導体の成長方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219376A (ja) * 2009-03-18 2010-09-30 Sharp Corp 窒化物半導体発光素子の製造方法
US8664688B2 (en) 2009-03-27 2014-03-04 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device
US8344413B2 (en) 2009-05-29 2013-01-01 Sharp Kabushiki Kaisha Nitride semiconductor wafer, nitride semiconductor chip, and method of manufacture of nitride semiconductor chip
JP2012238787A (ja) * 2011-05-13 2012-12-06 Toshiba Corp 半導体発光素子及びウェーハ
KR101916020B1 (ko) * 2011-07-11 2018-11-07 엘지이노텍 주식회사 발광소자, 발광 소자 제조방법 및 발광 소자 패키지
JP2017045787A (ja) * 2015-08-25 2017-03-02 シャープ株式会社 窒化物半導体発光素子
JP2020068311A (ja) * 2018-10-25 2020-04-30 日亜化学工業株式会社 発光素子

Also Published As

Publication number Publication date
TW200901525A (en) 2009-01-01
JPWO2008155958A1 (ja) 2010-08-26
US20100117055A1 (en) 2010-05-13

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