JP2007281257A5 - - Google Patents

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Publication number
JP2007281257A5
JP2007281257A5 JP2006106805A JP2006106805A JP2007281257A5 JP 2007281257 A5 JP2007281257 A5 JP 2007281257A5 JP 2006106805 A JP2006106805 A JP 2006106805A JP 2006106805 A JP2006106805 A JP 2006106805A JP 2007281257 A5 JP2007281257 A5 JP 2007281257A5
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JP
Japan
Prior art keywords
layers
layer side
semiconductor layer
group iii
iii nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006106805A
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English (en)
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JP2007281257A (ja
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Publication date
Application filed filed Critical
Priority to JP2006106805A priority Critical patent/JP2007281257A/ja
Priority claimed from JP2006106805A external-priority patent/JP2007281257A/ja
Priority to US11/783,110 priority patent/US8076684B2/en
Priority to CNB2007100937071A priority patent/CN100490199C/zh
Publication of JP2007281257A publication Critical patent/JP2007281257A/ja
Publication of JP2007281257A5 publication Critical patent/JP2007281257A5/ja
Pending legal-status Critical Current

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Claims (3)

  1. III族窒化物半導体を用いた多重量子井戸構造をもつ発光層を備えたIII族窒化物半導体発光素子において、
    前記発光層を構成する複数の井戸層は、各発光波長を互いに合致させるような成長条件をもってそれぞれ形成され、
    前記発光層は、前記井戸層のｐ−半導体層側に障壁層を積層してなる複数のペア層によって形成され、
    前記複数の井戸層は、各層構成成分の組成比が互いに異なる比率に設定されたＩｎＧａＮ層からなり、
    前記ＩｎＧａＮ層のＩｎ組成比は、ｎ−半導体層側からｐ−半導体層側に向かって漸次小さくなり、
    前記複数の井戸層は、各層厚が互いに異なる寸法に設定され、
    前記複数の井戸層における層厚は、ｎ−半導体層側からｐ−半導体層側に向かって漸次小さくなることを特徴とするIII族窒化物半導体発光素子。
  2. 前記複数の井戸層は、不純物として添加されるＳｉの添加量が互いに異なる分量に設定されたＩｎＧａＮ層からなる請求項１に記載のIII族窒化物半導体発光素子。
  3. 前記Ｓｉの添加量は、ｎ−半導体層側からｐ−半導体層側に向かって漸次大きくなる請求項２に記載のIII族窒化物半導体発光素子。
JP2006106805A 2006-04-07 2006-04-07 Ｉｉｉ族窒化物半導体発光素子 Pending JP2007281257A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006106805A JP2007281257A (ja) 2006-04-07 2006-04-07 Ｉｉｉ族窒化物半導体発光素子
US11/783,110 US8076684B2 (en) 2006-04-07 2007-04-05 Group III intride semiconductor light emitting element
CNB2007100937071A CN100490199C (zh) 2006-04-07 2007-04-05 Ⅲ族氮化物半导体发光元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006106805A JP2007281257A (ja) 2006-04-07 2006-04-07 Ｉｉｉ族窒化物半導体発光素子

Publications (2)

Publication Number Publication Date
JP2007281257A JP2007281257A (ja) 2007-10-25
JP2007281257A5 true JP2007281257A5 (ja) 2010-03-11

Family

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Family Applications (1)

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JP2006106805A Pending JP2007281257A (ja) 2006-04-07 2006-04-07 Ｉｉｉ族窒化物半導体発光素子

Country Status (3)

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US (1) US8076684B2 (ja)
JP (1) JP2007281257A (ja)
CN (1) CN100490199C (ja)

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JPWO2008155958A1 (ja) * 2007-06-15 2010-08-26 ローム株式会社 半導体発光素子及び半導体発光素子の製造方法
EP2151861A1 (en) * 2008-08-06 2010-02-10 S.O.I. TEC Silicon Passivation of etched semiconductor structures
EP2151856A1 (en) * 2008-08-06 2010-02-10 S.O.I. TEC Silicon Relaxation of strained layers
TWI457984B (zh) 2008-08-06 2014-10-21 Soitec Silicon On Insulator 應變層的鬆弛方法
EP2151852B1 (en) * 2008-08-06 2020-01-15 Soitec Relaxation and transfer of strained layers
EP2159836B1 (en) * 2008-08-25 2017-05-31 Soitec Stiffening layers for the relaxation of strained layers
US8575592B2 (en) * 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
JP4940317B2 (ja) * 2010-02-25 2012-05-30 株式会社東芝 半導体発光素子及びその製造方法
EP2503603B1 (en) * 2011-03-25 2019-09-25 LG Innotek Co., Ltd. Light emitting device and method for manufacturing the same
US9287684B2 (en) 2011-04-04 2016-03-15 Soraa Laser Diode, Inc. Laser package having multiple emitters with color wheel
CN102368519B (zh) * 2011-10-27 2016-04-20 华灿光电股份有限公司 一种提高半导体二极管多量子阱发光效率的方法
CN102412351B (zh) * 2011-10-27 2016-06-22 华灿光电股份有限公司 提高ESD的复合n-GaN层结构的制备方法
KR101747349B1 (ko) * 2011-12-07 2017-06-28 삼성전자주식회사 반도체 발광소자
JP2013145867A (ja) * 2011-12-15 2013-07-25 Hitachi Cable Ltd 窒化物半導体テンプレート及び発光ダイオード
TWI502767B (zh) * 2012-06-13 2015-10-01 Lextar Electronics Corp 半導體發光結構
JPWO2014061692A1 (ja) 2012-10-19 2016-09-05 シャープ株式会社 窒化物半導体発光素子
CN103035805B (zh) * 2012-12-12 2016-06-01 华灿光电股份有限公司 一种发光二极管外延片及其制备方法
FR3004005B1 (fr) * 2013-03-28 2016-11-25 Commissariat Energie Atomique Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique
CN109346575B (zh) * 2018-09-03 2020-01-21 淮安澳洋顺昌光电技术有限公司 一种发光二极管外延片及其制备方法
JP6891865B2 (ja) * 2018-10-25 2021-06-18 日亜化学工業株式会社 発光素子
CN110504340B (zh) * 2019-09-18 2021-10-08 福建兆元光电有限公司 一种氮化镓发光二极管led外延片的生长方法
CN112951957B (zh) * 2021-03-21 2021-12-21 南通大学 一种耦合量子阱结构深紫外AlGaN基发光二极管

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JPS58197784A (ja) * 1982-05-12 1983-11-17 Nec Corp 発光ダイオ−ド
JP2905034B2 (ja) * 1993-05-21 1999-06-14 シャープ株式会社 量子井戸構造体
DE69533511T2 (de) * 1994-07-21 2005-09-15 Matsushita Electric Industrial Co., Ltd., Kadoma Lichtemittierende halbleitervorrichtung und herstellungsverfahren
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