JP5671244B2 - 窒化物系半導体発光素子 - Google Patents
窒化物系半導体発光素子 Download PDFInfo
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- JP5671244B2 JP5671244B2 JP2010050369A JP2010050369A JP5671244B2 JP 5671244 B2 JP5671244 B2 JP 5671244B2 JP 2010050369 A JP2010050369 A JP 2010050369A JP 2010050369 A JP2010050369 A JP 2010050369A JP 5671244 B2 JP5671244 B2 JP 5671244B2
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- 239000004065 semiconductor Substances 0.000 title claims description 145
- 150000004767 nitrides Chemical class 0.000 title claims description 39
- 230000004888 barrier function Effects 0.000 claims description 187
- 239000000758 substrate Substances 0.000 claims description 37
- 239000000203 mixture Substances 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 23
- 230000007547 defect Effects 0.000 claims description 19
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 426
- 229910002601 GaN Inorganic materials 0.000 description 28
- 229910052738 indium Inorganic materials 0.000 description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- MGYGFNQQGAQEON-UHFFFAOYSA-N 4-tolyl isocyanate Chemical compound CC1=CC=C(N=C=O)C=C1 MGYGFNQQGAQEON-UHFFFAOYSA-N 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Description
(実施の形態1)
(半導体構造10)
(第一活性領域131及び第二活性領域132)
(井戸層及び障壁層)
(活性領域13のペア積層数)
(キャップ層)
(最終障壁層)
(基板)
(バッファ層)
(製造方法)
(比較試験1)
(比較試験2)
2…障壁層
4…基板
10…半導体構造
11…n型半導体層
12…p型半導体層
13…活性領域
131…第一活性領域
132…第二活性領域
133…第三活性領域
1311…第一井戸層
1312…第一障壁層
1313…キャップ層
1321…第二井戸層
1322…第二障壁層
1312a…高温成長障壁層
1312b…低温成長障壁層
1331…第三井戸層
1332…第三障壁層
15…最終障壁層
21…n型電極
22…p型電極
100…発光素子(窒化物系半導体発光素子)
p1−1、p1−2、p1−3、p1−4…第一の活性領域内のペア
p2−1、p2−2…第二の活性領域内のペア
p3−1…第三の活性領域内のペア
Claims (6)
- 基板と、前記基板上に順に積層されたn型半導体層、活性領域及びp型半導体層を有する窒化物系半導体発光素子であって、
前記活性領域は、多重量子井戸構造を構成し、井戸層で発生した結晶欠陥を補填するための層として、
各層の厚みが略等しい複数の第一障壁層と、
前記第一障壁層よりも前記p型半導体層側に設けられ、かつ前記第一障壁層の膜厚よりも薄い膜厚を有する、各層の厚みが略等しい複数の第二障壁層
を備え、
前記第一障壁層の総数は、前記第二障壁層の総数よりも多く、
前記活性領域内の第二障壁層の内、一番上の第二障壁層の上に接するように前記p型半導体層を積層してなることを特徴とする窒化物系半導体発光素子。 - 基板と、前記基板上に順に積層されたn型半導体層、活性領域及びp型半導体層を有する窒化物系半導体発光素子であって、
前記活性領域は、多重量子井戸構造を構成し、井戸層で発生した結晶欠陥を補填するための層として、
各層の厚みが略等しい複数の第一障壁層と、
前記第一障壁層よりも前記p型半導体層側に設けられ、かつ前記第一障壁層の膜厚よりも薄い膜厚を有する、各層の厚みが略等しい複数の第二障壁層
を備え、
前記第一障壁層の総数は、前記第二障壁層の総数よりも多く、
さらに前記複数の第二障壁層の内、一番上の第二障壁層の上に、第三井戸層と第三障壁層とを備え、
前記活性領域内の、一番上の第三障壁層の上に接するように前記p型半導体層を積層してなることを特徴とする窒化物系半導体発光素子。 - 請求項1又は2に記載の窒化物系半導体発光素子であって、
前記第一障壁層は、前記第一障壁層と組成の異なる井戸層とで一周期として、複数周期を繰り返し積層されており、
前記第一障壁層の膜厚が、前記井戸層の膜厚の2倍以上であることを特徴とする窒化物系半導体発光素子。 - 請求項1から3のいずれか一に記載の窒化物系半導体発光素子であって、
前記第一障壁層及び第二障壁層はそれぞれ、該第一障壁層、第二障壁層と組成の異なる井戸層とで一周期として、複数周期を繰り返し積層されており、
前記井戸層がInGaNで構成され、
前記第一障壁層及び第二障壁層がGaN、又は、前記井戸層よりもInの混晶比が低いInGaN、AlGaNで構成されてなることを特徴とする窒化物系半導体発光素子。 - 請求項4に記載の窒化物系半導体発光素子であって、さらに、
前記活性領域の一周期を構成する井戸層と第一障壁層及び第二障壁層の間に、前記井戸層及び第一障壁層及び第二障壁層と組成の異なるキャップ層を各々設けてなることを特徴とする窒化物系半導体発光素子。 - 請求項5に記載の窒化物系半導体発光素子であって、
前記キャップ層が、AlGaN層で構成されてなることを特徴とする窒化物系半導体発光素子。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010050369A JP5671244B2 (ja) | 2010-03-08 | 2010-03-08 | 窒化物系半導体発光素子 |
CN201180013144.5A CN102792533B (zh) | 2010-03-08 | 2011-03-03 | 氮化物系半导体发光元件 |
KR1020127023453A KR101565205B1 (ko) | 2010-03-08 | 2011-03-03 | 질화물계 반도체 발광소자 |
EP11753265.5A EP2549599B1 (en) | 2010-03-08 | 2011-03-03 | Nitride semiconductor light-emitting element |
EP18172792.6A EP3399560B1 (en) | 2010-03-08 | 2011-03-03 | Nitride group semiconductor light emitting device |
PCT/JP2011/054955 WO2011111606A1 (ja) | 2010-03-08 | 2011-03-03 | 窒化物系半導体発光素子 |
US13/583,257 US8669546B2 (en) | 2010-03-08 | 2011-03-03 | Nitride group semiconductor light emitting device including multiquantum well structure |
TW100107793A TWI518943B (zh) | 2010-03-08 | 2011-03-08 | 氮化物系半導體發光元件 |
Applications Claiming Priority (1)
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JP2010050369A JP5671244B2 (ja) | 2010-03-08 | 2010-03-08 | 窒化物系半導体発光素子 |
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JP2011187621A JP2011187621A (ja) | 2011-09-22 |
JP5671244B2 true JP5671244B2 (ja) | 2015-02-18 |
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Country Status (7)
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US (1) | US8669546B2 (ja) |
EP (2) | EP3399560B1 (ja) |
JP (1) | JP5671244B2 (ja) |
KR (1) | KR101565205B1 (ja) |
CN (1) | CN102792533B (ja) |
TW (1) | TWI518943B (ja) |
WO (1) | WO2011111606A1 (ja) |
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JP5613719B2 (ja) * | 2010-08-26 | 2014-10-29 | 株式会社東芝 | 半導体発光素子 |
JP2013012684A (ja) * | 2011-06-30 | 2013-01-17 | Sharp Corp | 窒化物半導体発光素子 |
JP6079628B2 (ja) * | 2011-07-26 | 2017-02-15 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
US8772791B2 (en) * | 2011-09-29 | 2014-07-08 | Epistar Corporation | Light-emitting device |
KR101843513B1 (ko) * | 2012-02-24 | 2018-03-29 | 서울바이오시스 주식회사 | 질화갈륨계 발광 다이오드 |
KR20130099574A (ko) * | 2012-02-29 | 2013-09-06 | 서울옵토디바이스주식회사 | 질화갈륨 기판을 갖는 발광 다이오드 |
KR102246648B1 (ko) * | 2014-07-29 | 2021-04-30 | 서울바이오시스 주식회사 | 자외선 발광 다이오드 |
US9318645B2 (en) | 2012-10-19 | 2016-04-19 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting element |
KR101991032B1 (ko) * | 2012-12-14 | 2019-06-19 | 엘지이노텍 주식회사 | 발광소자 |
JP6001446B2 (ja) * | 2012-12-28 | 2016-10-05 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP6128138B2 (ja) * | 2015-02-10 | 2017-05-17 | ウシオ電機株式会社 | 半導体発光素子 |
JP6438542B1 (ja) * | 2017-07-27 | 2018-12-12 | 日機装株式会社 | 半導体発光素子 |
JP6727185B2 (ja) * | 2017-12-28 | 2020-07-22 | 日機装株式会社 | 窒化物半導体発光素子 |
CN108336199A (zh) * | 2018-03-09 | 2018-07-27 | 南昌大学 | 一种氮化物发光二极管结构 |
JP6891865B2 (ja) * | 2018-10-25 | 2021-06-18 | 日亜化学工業株式会社 | 発光素子 |
JP7260807B2 (ja) * | 2020-12-24 | 2023-04-19 | 日亜化学工業株式会社 | 窒化物半導体発光素子およびその製造方法 |
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- 2011-03-03 KR KR1020127023453A patent/KR101565205B1/ko active IP Right Grant
- 2011-03-03 WO PCT/JP2011/054955 patent/WO2011111606A1/ja active Application Filing
- 2011-03-03 EP EP18172792.6A patent/EP3399560B1/en active Active
- 2011-03-03 US US13/583,257 patent/US8669546B2/en active Active
- 2011-03-03 EP EP11753265.5A patent/EP2549599B1/en active Active
- 2011-03-03 CN CN201180013144.5A patent/CN102792533B/zh active Active
- 2011-03-08 TW TW100107793A patent/TWI518943B/zh active
Also Published As
Publication number | Publication date |
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EP2549599A4 (en) | 2014-11-05 |
CN102792533B (zh) | 2014-12-24 |
TWI518943B (zh) | 2016-01-21 |
EP3399560B1 (en) | 2020-01-01 |
US8669546B2 (en) | 2014-03-11 |
EP2549599A1 (en) | 2013-01-23 |
WO2011111606A1 (ja) | 2011-09-15 |
US20130001512A1 (en) | 2013-01-03 |
CN102792533A (zh) | 2012-11-21 |
EP2549599B1 (en) | 2018-10-10 |
TW201145573A (en) | 2011-12-16 |
JP2011187621A (ja) | 2011-09-22 |
EP3399560A1 (en) | 2018-11-07 |
KR101565205B1 (ko) | 2015-11-02 |
KR20130012115A (ko) | 2013-02-01 |
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