JP2010251693A5 - - Google Patents
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- Publication number
- JP2010251693A5 JP2010251693A5 JP2009220369A JP2009220369A JP2010251693A5 JP 2010251693 A5 JP2010251693 A5 JP 2010251693A5 JP 2009220369 A JP2009220369 A JP 2009220369A JP 2009220369 A JP2009220369 A JP 2009220369A JP 2010251693 A5 JP2010251693 A5 JP 2010251693A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive metal
- layer
- metal electrode
- doped layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims description 77
- 239000002184 metal Substances 0.000 claims description 77
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 6
- 230000017525 heat dissipation Effects 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910018572 CuAlO2 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- -1 LaCuOS Inorganic materials 0.000 description 1
- 229910007486 ZnGa2O4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/422,027 US7952106B2 (en) | 2009-04-10 | 2009-04-10 | Light emitting diode device having uniform current distribution and method for forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010251693A JP2010251693A (ja) | 2010-11-04 |
| JP2010251693A5 true JP2010251693A5 (enExample) | 2014-01-23 |
Family
ID=42582605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009220369A Pending JP2010251693A (ja) | 2009-04-10 | 2009-09-25 | 発光ダイオードデバイスおよびその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7952106B2 (enExample) |
| EP (1) | EP2239791A3 (enExample) |
| JP (1) | JP2010251693A (enExample) |
| KR (1) | KR20100113008A (enExample) |
| CN (1) | CN101859849B (enExample) |
| TW (1) | TWI387136B (enExample) |
Families Citing this family (29)
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|---|---|---|---|---|
| TW201448263A (zh) | 2006-12-11 | 2014-12-16 | 美國加利福尼亞大學董事會 | 透明發光二極體 |
| US7952106B2 (en) * | 2009-04-10 | 2011-05-31 | Everlight Electronics Co., Ltd. | Light emitting diode device having uniform current distribution and method for forming the same |
| US20100327300A1 (en) * | 2009-06-25 | 2010-12-30 | Koninklijke Philips Electronics N.V. | Contact for a semiconductor light emitting device |
| KR101093120B1 (ko) * | 2009-11-16 | 2011-12-13 | 서울옵토디바이스주식회사 | 전류분산을 위한 전극 연장부들을 갖는 발광 다이오드 |
| KR101625125B1 (ko) * | 2009-12-29 | 2016-05-27 | 서울바이오시스 주식회사 | 전극 연장부들을 갖는 발광 다이오드 |
| US8502192B2 (en) * | 2010-01-12 | 2013-08-06 | Varian Semiconductor Equipment Associates, Inc. | LED with uniform current spreading and method of fabrication |
| JP2012216712A (ja) * | 2011-03-28 | 2012-11-08 | Nitto Denko Corp | 発光ダイオード装置の製造方法および発光ダイオード素子 |
| TWI453968B (zh) * | 2011-05-20 | 2014-09-21 | Huga Optotech Inc | 半導體發光結構 |
| CN102800778B (zh) * | 2011-05-27 | 2015-03-18 | 东莞市福地电子材料有限公司 | 一种芯片倒装的发光二极管及其制造方法 |
| TWI606618B (zh) * | 2012-01-03 | 2017-11-21 | Ｌｇ伊諾特股份有限公司 | 發光裝置 |
| US20130285010A1 (en) * | 2012-04-27 | 2013-10-31 | Phostek, Inc. | Stacked led device with posts in adhesive layer |
| KR101978968B1 (ko) * | 2012-08-14 | 2019-05-16 | 삼성전자주식회사 | 반도체 발광소자 및 발광장치 |
| JP2014127565A (ja) * | 2012-12-26 | 2014-07-07 | Toyoda Gosei Co Ltd | 半導体発光素子 |
| KR101958419B1 (ko) * | 2013-01-29 | 2019-03-14 | 삼성전자 주식회사 | 반도체 발광 소자 |
| CN103579478B (zh) * | 2013-11-08 | 2016-05-18 | 中国科学院半导体研究所 | 制作倒装集成led芯片级光源模组的方法 |
| CN103824848B (zh) * | 2014-01-16 | 2017-03-15 | 大连德豪光电科技有限公司 | Led显示屏及其制作方法 |
| US10700665B2 (en) | 2015-12-04 | 2020-06-30 | Intel Corporation | Film bulk acoustic resonator (FBAR) devices for high frequency RF filters |
| JP6942589B2 (ja) * | 2017-09-27 | 2021-09-29 | 旭化成株式会社 | 半導体発光装置および紫外線発光モジュール |
| CN108257987B (zh) * | 2017-11-30 | 2020-08-11 | 武汉高芯科技有限公司 | 焦平面阵列探测器及其制备方法 |
| FR3078442B1 (fr) * | 2018-02-26 | 2023-02-10 | Valeo Vision | Source lumineuse electroluminescente destinee a etre alimentee par une source de tension |
| CN108258089A (zh) * | 2018-03-23 | 2018-07-06 | 广东省半导体产业技术研究院 | 发光二极管结构制作方法及发光二极管结构 |
| JP6912731B2 (ja) * | 2018-07-31 | 2021-08-04 | 日亜化学工業株式会社 | 半導体発光素子 |
| CN109244209B (zh) * | 2018-08-06 | 2024-02-13 | 厦门乾照光电股份有限公司 | 发光二极管的倒装芯片及其制造方法和蚀刻方法 |
| CN110957341B (zh) * | 2018-09-27 | 2022-07-19 | 成都辰显光电有限公司 | 驱动背板及其制备方法、Micro-LED芯片及其制备方法和显示装置 |
| CN111129275B (zh) * | 2019-12-31 | 2024-06-14 | 广东晶科电子股份有限公司 | 维修用倒装微发光二极管及其用于模组修复的方法 |
| US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
| US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
| CN113270526B (zh) * | 2021-01-05 | 2022-06-17 | 朗明纳斯光电(厦门)有限公司 | 发光二极管、发光装置及其投影仪 |
| CN112420888B (zh) * | 2021-01-21 | 2021-04-23 | 华灿光电（浙江）有限公司 | 紫外发光二极管外延片及其制备方法 |
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-
2009
- 2009-04-10 US US12/422,027 patent/US7952106B2/en not_active Expired - Fee Related
- 2009-07-14 EP EP09165401A patent/EP2239791A3/en not_active Withdrawn
- 2009-08-14 TW TW098127497A patent/TWI387136B/zh not_active IP Right Cessation
- 2009-08-31 CN CN200910166816.0A patent/CN101859849B/zh not_active Expired - Fee Related
- 2009-09-10 KR KR1020090085282A patent/KR20100113008A/ko not_active Withdrawn
- 2009-09-25 JP JP2009220369A patent/JP2010251693A/ja active Pending
-
2011
- 2011-04-20 US US13/090,881 patent/US8258519B2/en not_active Expired - Fee Related
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