KR20100113008A - 발광 다이오드 소자 및 그 제조 방법 - Google Patents

발광 다이오드 소자 및 그 제조 방법 Download PDF

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Publication number
KR20100113008A
KR20100113008A KR1020090085282A KR20090085282A KR20100113008A KR 20100113008 A KR20100113008 A KR 20100113008A KR 1020090085282 A KR1020090085282 A KR 1020090085282A KR 20090085282 A KR20090085282 A KR 20090085282A KR 20100113008 A KR20100113008 A KR 20100113008A
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South Korea
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layer
doped layer
type
metal
electrodes
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Korean (ko)
Inventor
친-위안 수
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에버라이트 일렉트로닉스 컴패니 리미티드
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Publication of KR20100113008A publication Critical patent/KR20100113008A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020090085282A 2009-04-10 2009-09-10 발광 다이오드 소자 및 그 제조 방법 Withdrawn KR20100113008A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/422,027 2009-04-10
US12/422,027 US7952106B2 (en) 2009-04-10 2009-04-10 Light emitting diode device having uniform current distribution and method for forming the same

Publications (1)

Publication Number Publication Date
KR20100113008A true KR20100113008A (ko) 2010-10-20

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KR1020090085282A Withdrawn KR20100113008A (ko) 2009-04-10 2009-09-10 발광 다이오드 소자 및 그 제조 방법

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Country Link
US (2) US7952106B2 (enExample)
EP (1) EP2239791A3 (enExample)
JP (1) JP2010251693A (enExample)
KR (1) KR20100113008A (enExample)
CN (1) CN101859849B (enExample)
TW (1) TWI387136B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140022640A (ko) * 2012-08-14 2014-02-25 삼성전자주식회사 반도체 발광소자 및 발광장치
KR20140096920A (ko) * 2013-01-29 2014-08-06 삼성전자주식회사 반도체 발광 소자

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CN103824848B (zh) * 2014-01-16 2017-03-15 大连德豪光电科技有限公司 Led显示屏及其制作方法
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JP6942589B2 (ja) * 2017-09-27 2021-09-29 旭化成株式会社 半導体発光装置および紫外線発光モジュール
CN108257987B (zh) * 2017-11-30 2020-08-11 武汉高芯科技有限公司 焦平面阵列探测器及其制备方法
FR3078442B1 (fr) * 2018-02-26 2023-02-10 Valeo Vision Source lumineuse electroluminescente destinee a etre alimentee par une source de tension
CN108258089A (zh) * 2018-03-23 2018-07-06 广东省半导体产业技术研究院 发光二极管结构制作方法及发光二极管结构
JP6912731B2 (ja) * 2018-07-31 2021-08-04 日亜化学工業株式会社 半導体発光素子
CN109244209B (zh) * 2018-08-06 2024-02-13 厦门乾照光电股份有限公司 发光二极管的倒装芯片及其制造方法和蚀刻方法
CN110957341B (zh) * 2018-09-27 2022-07-19 成都辰显光电有限公司 驱动背板及其制备方法、Micro-LED芯片及其制备方法和显示装置
CN111129275B (zh) * 2019-12-31 2024-06-14 广东晶科电子股份有限公司 维修用倒装微发光二极管及其用于模组修复的方法
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
CN115332415A (zh) * 2021-01-05 2022-11-11 朗明纳斯光电(厦门)有限公司 发光二极管、发光装置及其投影仪
CN112420888B (zh) * 2021-01-21 2021-04-23 华灿光电（浙江）有限公司 紫外发光二极管外延片及其制备方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140022640A (ko) * 2012-08-14 2014-02-25 삼성전자주식회사 반도체 발광소자 및 발광장치
KR20140096920A (ko) * 2013-01-29 2014-08-06 삼성전자주식회사 반도체 발광 소자

Also Published As

Publication number Publication date
JP2010251693A (ja) 2010-11-04
US7952106B2 (en) 2011-05-31
TW201037866A (en) 2010-10-16
EP2239791A3 (en) 2011-01-19
EP2239791A2 (en) 2010-10-13
US8258519B2 (en) 2012-09-04
US20100258835A1 (en) 2010-10-14
US20110193061A1 (en) 2011-08-11
TWI387136B (zh) 2013-02-21
CN101859849B (zh) 2012-05-30
CN101859849A (zh) 2010-10-13

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Patent event date: 20090910

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