FR3078442B1 - Source lumineuse electroluminescente destinee a etre alimentee par une source de tension - Google Patents

Source lumineuse electroluminescente destinee a etre alimentee par une source de tension Download PDF

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Publication number
FR3078442B1
FR3078442B1 FR1851636A FR1851636A FR3078442B1 FR 3078442 B1 FR3078442 B1 FR 3078442B1 FR 1851636 A FR1851636 A FR 1851636A FR 1851636 A FR1851636 A FR 1851636A FR 3078442 B1 FR3078442 B1 FR 3078442B1
Authority
FR
France
Prior art keywords
electro
powered
luminescent light
light source
intended
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1851636A
Other languages
English (en)
Other versions
FR3078442A1 (fr
Inventor
Zdravko Zojceski
Samuel Daroussin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Valeo Vision SAS
Original Assignee
Valeo Vision SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valeo Vision SAS filed Critical Valeo Vision SAS
Priority to FR1851636A priority Critical patent/FR3078442B1/fr
Priority to EP19158789.8A priority patent/EP3531453B1/fr
Priority to US16/285,500 priority patent/US11032889B2/en
Priority to CN201910144792.2A priority patent/CN110198579A/zh
Publication of FR3078442A1 publication Critical patent/FR3078442A1/fr
Application granted granted Critical
Publication of FR3078442B1 publication Critical patent/FR3078442B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/10—Controlling the intensity of the light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40—Details of LED load circuits
    • H05B45/44—Details of LED load circuits with an active control inside an LED matrix
    • H05B45/46—Details of LED load circuits with an active control inside an LED matrix having LEDs disposed in parallel lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)
  • Led Device Packages (AREA)
FR1851636A 2018-02-26 2018-02-26 Source lumineuse electroluminescente destinee a etre alimentee par une source de tension Active FR3078442B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1851636A FR3078442B1 (fr) 2018-02-26 2018-02-26 Source lumineuse electroluminescente destinee a etre alimentee par une source de tension
EP19158789.8A EP3531453B1 (fr) 2018-02-26 2019-02-22 Source lumineuse électroluminescente destinée à être alimentée par de l'énergie provenant d'une source de tension
US16/285,500 US11032889B2 (en) 2018-02-26 2019-02-26 Electroluminescent light source intended to be supplied with power by a voltage source
CN201910144792.2A CN110198579A (zh) 2018-02-26 2019-02-26 旨在由电压源供电的电致发光光源

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1851636 2018-02-26
FR1851636A FR3078442B1 (fr) 2018-02-26 2018-02-26 Source lumineuse electroluminescente destinee a etre alimentee par une source de tension

Publications (2)

Publication Number Publication Date
FR3078442A1 FR3078442A1 (fr) 2019-08-30
FR3078442B1 true FR3078442B1 (fr) 2023-02-10

Family

ID=62092117

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1851636A Active FR3078442B1 (fr) 2018-02-26 2018-02-26 Source lumineuse electroluminescente destinee a etre alimentee par une source de tension

Country Status (4)

Country Link
US (1) US11032889B2 (fr)
EP (1) EP3531453B1 (fr)
CN (1) CN110198579A (fr)
FR (1) FR3078442B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11191220B2 (en) * 2016-09-25 2021-12-07 Illum Horticulture Llc Method and apparatus for horticultural lighting with current sharing
US20210074880A1 (en) * 2018-12-18 2021-03-11 Bolb Inc. Light-output-power self-awareness light-emitting device

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7692182B2 (en) * 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US6621235B2 (en) * 2001-08-03 2003-09-16 Koninklijke Philips Electronics N.V. Integrated LED driving device with current sharing for multiple LED strings
TW586091B (en) * 2001-12-07 2004-05-01 Sharp Kk Display device comprising bidirectional two-terminal element and method of fabricating the same
KR100494557B1 (ko) * 2002-09-05 2005-06-13 한국전자통신연구원 고굴절률 덮개층을 가지는 고효율 발광소자
KR101344512B1 (ko) 2004-11-01 2013-12-23 더 리전츠 오브 더 유니버시티 오브 캘리포니아 매우 낮은 직렬－저항 및 개선된 히트 싱킹을 가진 발광 소자 제조용의 상호 맞물린 멀티－픽셀 어레이
US7196483B2 (en) * 2005-06-16 2007-03-27 Au Optronics Corporation Balanced circuit for multi-LED driver
KR101055772B1 (ko) * 2005-12-15 2011-08-11 서울반도체 주식회사 발광장치
CN101578714B (zh) * 2007-08-03 2011-02-09 松下电器产业株式会社 发光装置
US7982409B2 (en) * 2009-02-26 2011-07-19 Bridgelux, Inc. Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs
US7952106B2 (en) * 2009-04-10 2011-05-31 Everlight Electronics Co., Ltd. Light emitting diode device having uniform current distribution and method for forming the same
WO2011033625A1 (fr) * 2009-09-16 2011-03-24 株式会社 東芝 Élément électroluminescent à semi-conducteur
US9293644B2 (en) * 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
KR100993085B1 (ko) * 2009-12-07 2010-11-08 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 라이트 유닛
WO2011099658A1 (fr) * 2010-02-11 2011-08-18 주식회사 세미콘라이트 Dispositif électroluminescent à semi-conducteur de nitrure de groupe iii
US8432104B2 (en) * 2010-12-09 2013-04-30 Delta Electronics, Inc. Load current balancing circuit
CN102790045A (zh) * 2011-05-18 2012-11-21 展晶科技(深圳)有限公司 发光二极管阵列及其制造方法
KR20140039032A (ko) * 2011-06-10 2014-03-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 질화 갈륨 반극성 기판들에서 낮은 저하 발광 다이오드 구조
FR2978093B1 (fr) * 2011-07-21 2013-11-22 Valeo Vision Circuit de commande d'un dispositif de signalisation ou d'eclairage a double fonction et procede de commande correspondant
KR101422037B1 (ko) * 2012-09-04 2014-07-23 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
DE102013203728A1 (de) * 2013-03-05 2014-09-25 Zumtobel Lighting Gmbh LED-Modul und Beleuchtungsanordnung mit entsprechendem Modul
US9119258B2 (en) * 2013-03-06 2015-08-25 General Electric Company Current split circuit for equally splitting current between parallel connected LED luminaire strings
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Also Published As

Publication number Publication date
EP3531453B1 (fr) 2023-06-07
US11032889B2 (en) 2021-06-08
CN110198579A (zh) 2019-09-03
FR3078442A1 (fr) 2019-08-30
US20190268986A1 (en) 2019-08-29
EP3531453A1 (fr) 2019-08-28

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