JP2016100508A5 - - Google Patents

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Publication number
JP2016100508A5
JP2016100508A5 JP2014237683A JP2014237683A JP2016100508A5 JP 2016100508 A5 JP2016100508 A5 JP 2016100508A5 JP 2014237683 A JP2014237683 A JP 2014237683A JP 2014237683 A JP2014237683 A JP 2014237683A JP 2016100508 A5 JP2016100508 A5 JP 2016100508A5
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Japan
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layer
buffer
layers
buffer region
multilayer structure
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JP2014237683A
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English (en)
Japanese (ja)
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JP2016100508A (ja
JP6180401B2 (ja
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Priority claimed from JP2014237683A external-priority patent/JP6180401B2/ja
Priority to JP2014237683A priority Critical patent/JP6180401B2/ja
Priority to KR1020177013821A priority patent/KR20170086522A/ko
Priority to US15/525,153 priority patent/US20170323960A1/en
Priority to PCT/JP2015/005562 priority patent/WO2016084311A1/ja
Priority to CN201580064038.8A priority patent/CN107004579B/zh
Priority to TW104137729A priority patent/TWI610344B/zh
Publication of JP2016100508A publication Critical patent/JP2016100508A/ja
Publication of JP2016100508A5 publication Critical patent/JP2016100508A5/ja
Publication of JP6180401B2 publication Critical patent/JP6180401B2/ja
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JP2014237683A 2014-11-25 2014-11-25 エピタキシャルウェーハ、半導体素子、エピタキシャルウェーハの製造方法、並びに、半導体素子の製造方法 Active JP6180401B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014237683A JP6180401B2 (ja) 2014-11-25 2014-11-25 エピタキシャルウェーハ、半導体素子、エピタキシャルウェーハの製造方法、並びに、半導体素子の製造方法
CN201580064038.8A CN107004579B (zh) 2014-11-25 2015-11-06 外延晶片、半导体元件、外延晶片的制造方法、以及半导体元件的制造方法
US15/525,153 US20170323960A1 (en) 2014-11-25 2015-11-06 Epitaxial wafer, semiconductor device, method for producing epitaxial wafer, and method for producing semiconductor device
PCT/JP2015/005562 WO2016084311A1 (ja) 2014-11-25 2015-11-06 エピタキシャルウェーハ、半導体素子、エピタキシャルウェーハの製造方法、並びに、半導体素子の製造方法
KR1020177013821A KR20170086522A (ko) 2014-11-25 2015-11-06 에피택셜 웨이퍼, 반도체 소자, 에피택셜 웨이퍼의 제조 방법 및 반도체 소자의 제조 방법
TW104137729A TWI610344B (zh) 2014-11-25 2015-11-16 磊晶晶圓、半導體元件、磊晶晶圓的製造方法、以及半導體元件的製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014237683A JP6180401B2 (ja) 2014-11-25 2014-11-25 エピタキシャルウェーハ、半導体素子、エピタキシャルウェーハの製造方法、並びに、半導体素子の製造方法

Publications (3)

Publication Number Publication Date
JP2016100508A JP2016100508A (ja) 2016-05-30
JP2016100508A5 true JP2016100508A5 (enExample) 2016-09-08
JP6180401B2 JP6180401B2 (ja) 2017-08-16

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ID=56073910

Family Applications (1)

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JP2014237683A Active JP6180401B2 (ja) 2014-11-25 2014-11-25 エピタキシャルウェーハ、半導体素子、エピタキシャルウェーハの製造方法、並びに、半導体素子の製造方法

Country Status (6)

Country Link
US (1) US20170323960A1 (enExample)
JP (1) JP6180401B2 (enExample)
KR (1) KR20170086522A (enExample)
CN (1) CN107004579B (enExample)
TW (1) TWI610344B (enExample)
WO (1) WO2016084311A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3451364B1 (en) * 2017-08-28 2020-02-26 Siltronic AG Heteroepitaxial wafer and method for producing a heteroepitaxial wafer
EP3576132B1 (en) * 2018-05-28 2025-12-17 IMEC vzw A iii-n semiconductor structure and a method for forming a iii-n semiconductor structure
WO2019240894A1 (en) * 2018-06-14 2019-12-19 Glo Ab Epitaxial gallium nitride based light emitting diode and method of making thereof
CN110233105B (zh) * 2019-06-20 2022-07-08 江苏能华微电子科技发展有限公司 一种翘曲可调的SiC基HEMT结构的制备方法及结构
TWI735212B (zh) * 2020-04-24 2021-08-01 環球晶圓股份有限公司 具有超晶格疊層體的磊晶結構
US11387356B2 (en) * 2020-07-31 2022-07-12 Vanguard International Semiconductor Corporation Semiconductor structure and high-electron mobility transistor device having the same
KR102728898B1 (ko) * 2022-04-21 2024-11-13 웨이브로드 주식회사 3족 질화물 반도체 적층체를 제조하는 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5309451B2 (ja) * 2007-02-19 2013-10-09 サンケン電気株式会社 半導体ウエーハ及び半導体素子及び製造方法
JP5309452B2 (ja) * 2007-02-28 2013-10-09 サンケン電気株式会社 半導体ウエーハ及び半導体素子及び製造方法
JP5477685B2 (ja) * 2009-03-19 2014-04-23 サンケン電気株式会社 半導体ウェーハ及び半導体素子及びその製造方法
JP5334057B2 (ja) * 2009-11-04 2013-11-06 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物積層基板
JP5660373B2 (ja) * 2010-10-29 2015-01-28 サンケン電気株式会社 半導体ウエーハ及び半導体素子
JP5708187B2 (ja) * 2011-04-15 2015-04-30 サンケン電気株式会社 半導体装置
US8710511B2 (en) * 2011-07-29 2014-04-29 Northrop Grumman Systems Corporation AIN buffer N-polar GaN HEMT profile
JP5127978B1 (ja) * 2011-09-08 2013-01-23 株式会社東芝 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
JP5462377B1 (ja) * 2013-01-04 2014-04-02 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物エピタキシャル基板およびその製造方法
CN103633134B (zh) * 2013-12-12 2016-09-14 中山大学 一种厚膜高阻氮化物半导体外延结构及其生长方法

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