JP2014072533A5 - - Google Patents
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- Publication number
- JP2014072533A5 JP2014072533A5 JP2013212623A JP2013212623A JP2014072533A5 JP 2014072533 A5 JP2014072533 A5 JP 2014072533A5 JP 2013212623 A JP2013212623 A JP 2013212623A JP 2013212623 A JP2013212623 A JP 2013212623A JP 2014072533 A5 JP2014072533 A5 JP 2014072533A5
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- semiconductor device
- semiconductor layer
- insulating film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 23
- 239000013078 crystal Substances 0.000 claims 21
- 239000000758 substrate Substances 0.000 claims 7
- 229910052593 corundum Inorganic materials 0.000 claims 5
- 239000010431 corundum Substances 0.000 claims 5
- 239000000463 material Substances 0.000 claims 3
- 230000002265 prevention Effects 0.000 claims 2
- 230000007704 transition Effects 0.000 claims 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 1
- 229910001195 gallium oxide Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013212623A JP6067532B2 (ja) | 2013-10-10 | 2013-10-10 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013212623A JP6067532B2 (ja) | 2013-10-10 | 2013-10-10 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013131172A Division JP5397795B1 (ja) | 2013-06-21 | 2013-06-21 | 半導体装置及びその製造方法、結晶及びその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016247779A Division JP6281145B2 (ja) | 2016-12-21 | 2016-12-21 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014072533A JP2014072533A (ja) | 2014-04-21 |
| JP2014072533A5 true JP2014072533A5 (enExample) | 2015-10-08 |
| JP6067532B2 JP6067532B2 (ja) | 2017-01-25 |
Family
ID=50747411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013212623A Active JP6067532B2 (ja) | 2013-10-10 | 2013-10-10 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6067532B2 (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9590050B2 (en) * | 2014-05-08 | 2017-03-07 | Flosfia, Inc. | Crystalline multilayer structure and semiconductor device |
| JP6230196B2 (ja) * | 2014-07-08 | 2017-11-15 | 株式会社Flosfia | 結晶性半導体膜および半導体装置 |
| JP6281146B2 (ja) | 2014-07-22 | 2018-02-21 | 株式会社Flosfia | 結晶性半導体膜および板状体ならびに半導体装置 |
| JP6390052B2 (ja) * | 2014-08-29 | 2018-09-19 | 高知県公立大学法人 | 量子井戸構造および半導体装置 |
| JP2016051824A (ja) * | 2014-08-29 | 2016-04-11 | 高知県公立大学法人 | エピタキシャル成長方法および成長装置ならびに量子井戸構造の作製方法 |
| CN106796891B (zh) | 2014-09-02 | 2020-07-17 | 株式会社Flosfia | 层叠结构体及其制造方法、半导体装置、以及晶体膜 |
| JP6478425B2 (ja) * | 2017-07-07 | 2019-03-06 | 株式会社Flosfia | 結晶性半導体膜および半導体装置 |
| CN109423694B (zh) | 2017-08-21 | 2022-09-09 | 株式会社Flosfia | 结晶膜、包括结晶膜的半导体装置以及制造结晶膜的方法 |
| CN112368429A (zh) | 2018-06-26 | 2021-02-12 | 株式会社Flosfia | 成膜方法及结晶性层叠结构体 |
| JP7741487B2 (ja) | 2018-06-26 | 2025-09-18 | 株式会社Flosfia | 結晶性酸化物膜 |
| JP7315136B2 (ja) | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物半導体 |
| JP7315137B2 (ja) | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物膜 |
| JP7124207B2 (ja) | 2019-03-28 | 2022-08-23 | 日本碍子株式会社 | 下地基板 |
| JP7176099B2 (ja) * | 2019-03-28 | 2022-11-21 | 日本碍子株式会社 | 半導体膜 |
| WO2020194803A1 (ja) | 2019-03-28 | 2020-10-01 | 日本碍子株式会社 | 下地基板及びその製造方法 |
| EP3960915A4 (en) | 2019-04-24 | 2022-12-21 | NGK Insulators, Ltd. | SEMICONDUCTOR FILM |
| EP3960914A4 (en) | 2019-04-24 | 2022-12-28 | NGK Insulators, Ltd. | Semiconductor film |
| WO2021044489A1 (ja) | 2019-09-02 | 2021-03-11 | 日本碍子株式会社 | 半導体膜 |
| CN114270531A (zh) | 2019-09-03 | 2022-04-01 | 株式会社Flosfia | 结晶膜、包含结晶膜的半导体装置以及结晶膜的制造方法 |
| WO2021048950A1 (ja) | 2019-09-11 | 2021-03-18 | 日本碍子株式会社 | 半導体膜 |
| KR102849602B1 (ko) | 2019-09-30 | 2025-08-21 | 가부시키가이샤 플로스피아 | 적층 구조체 및 반도체 장치 |
| JP7290740B2 (ja) | 2019-09-30 | 2023-06-13 | 日本碍子株式会社 | α－Ｇａ２Ｏ３系半導体膜 |
| CN114503285A (zh) * | 2019-10-03 | 2022-05-13 | 株式会社Flosfia | 半导体元件 |
| CN114585776B (zh) | 2019-11-05 | 2025-06-03 | 日本碍子株式会社 | 氧化镓结晶的制法 |
| WO2021153609A1 (ja) | 2020-01-27 | 2021-08-05 | 株式会社Flosfia | 半導体装置および半導体装置の製造方法 |
| US11694894B2 (en) | 2020-04-24 | 2023-07-04 | Flosfia Inc. | Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressure |
| US11804519B2 (en) | 2020-04-24 | 2023-10-31 | Flosfia Inc. | Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure |
| JP7061214B2 (ja) * | 2020-08-06 | 2022-04-27 | 信越化学工業株式会社 | 半導体積層体、半導体素子および半導体素子の製造方法 |
| KR20230048008A (ko) * | 2020-08-06 | 2023-04-10 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 반도체 적층체, 반도체 소자 및 반도체 소자의 제조방법 |
| JP7681039B2 (ja) | 2020-10-08 | 2025-05-21 | 日本碍子株式会社 | 酸化ガリウム単結晶粒子及びその製法 |
| US20230074175A1 (en) * | 2021-09-09 | 2023-03-09 | The Regents Of The University Of Michigan | Doped Aluminum-Alloyed Gallium Oxide And Ohmic Contacts |
| KR20240063901A (ko) | 2021-09-22 | 2024-05-10 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 성막방법, 성막장치 및 결정성 산화물막 |
| EP4411021A1 (en) | 2021-09-30 | 2024-08-07 | Shin-Etsu Chemical Co., Ltd. | Laminated structure, semiconductor device, and method for forming crystalline oxide film |
| JPWO2023238587A1 (enExample) | 2022-06-08 | 2023-12-14 | ||
| US12402381B2 (en) | 2022-07-12 | 2025-08-26 | Flosfia, Inc. | Semiconductor device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4083396B2 (ja) * | 2000-07-10 | 2008-04-30 | 独立行政法人科学技術振興機構 | 紫外透明導電膜とその製造方法 |
| US8569754B2 (en) * | 2010-11-05 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8809852B2 (en) * | 2010-11-30 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same |
-
2013
- 2013-10-10 JP JP2013212623A patent/JP6067532B2/ja active Active
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