JP2017529692A5 - - Google Patents

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Publication number
JP2017529692A5
JP2017529692A5 JP2017506280A JP2017506280A JP2017529692A5 JP 2017529692 A5 JP2017529692 A5 JP 2017529692A5 JP 2017506280 A JP2017506280 A JP 2017506280A JP 2017506280 A JP2017506280 A JP 2017506280A JP 2017529692 A5 JP2017529692 A5 JP 2017529692A5
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JP
Japan
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layer
content
buffer
buffer layer
relaxation
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JP2017506280A
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English (en)
Japanese (ja)
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JP2017529692A (ja
JP6484328B2 (ja
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Priority claimed from EP14179690.4A external-priority patent/EP2983195A1/en
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JP2017506280A 2014-08-04 2015-07-22 バッファ層スタック上にｉｉｉ−ｖ族の活性半導体層を備える半導体構造および半導体構造を製造するための方法 Active JP6484328B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14179690.4 2014-08-04
EP14179690.4A EP2983195A1 (en) 2014-08-04 2014-08-04 Semiconductor structure comprising an active semiconductor layer of the iii-v type on a buffer layer stack and method for producing semiconductor structure
PCT/EP2015/066785 WO2016020196A1 (en) 2014-08-04 2015-07-22 Semiconductor structure comprising an active semiconductor layer of the iii-v type on a buffer layer stack and method for producing semiconductor structure

Publications (3)

Publication Number Publication Date
JP2017529692A JP2017529692A (ja) 2017-10-05
JP2017529692A5 true JP2017529692A5 (enExample) 2018-07-05
JP6484328B2 JP6484328B2 (ja) 2019-03-13

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ID=51260763

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JP2017506280A Active JP6484328B2 (ja) 2014-08-04 2015-07-22 バッファ層スタック上にｉｉｉ−ｖ族の活性半導体層を備える半導体構造および半導体構造を製造するための方法

Country Status (7)

Country Link
US (1) US9991346B2 (enExample)
EP (2) EP2983195A1 (enExample)
JP (1) JP6484328B2 (enExample)
KR (1) KR101899742B1 (enExample)
CN (1) CN106663596B (enExample)
TW (1) TWI655790B (enExample)
WO (1) WO2016020196A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6653750B2 (ja) * 2016-02-26 2020-02-26 サンケン電気株式会社 半導体基体及び半導体装置
CN106876253B (zh) * 2017-03-10 2019-06-04 成都海威华芯科技有限公司 一种锐角金属图形剥离方法
WO2019069604A1 (ja) * 2017-10-06 2019-04-11 パナソニックＩｐマネジメント株式会社 半導体発光素子
CN111492464B (zh) * 2017-11-22 2024-11-08 Iqe公司 应变平衡的半导体结构
CN108598234A (zh) * 2018-04-26 2018-09-28 吉林大学 一种降低SiC衬底上GaN薄膜内张应力的外延结构及其制备方法
JP7158272B2 (ja) * 2018-12-25 2022-10-21 エア・ウォーター株式会社 化合物半導体基板
TWI701717B (zh) * 2019-08-12 2020-08-11 環球晶圓股份有限公司 磊晶結構
KR102874457B1 (ko) * 2019-10-17 2025-10-20 삼성전자주식회사 반도체 박막 구조체 및 이를 포함하는 전자 소자
CN110783395B (zh) * 2019-11-06 2022-10-14 錼创显示科技股份有限公司 半导体结构
TWI730494B (zh) * 2019-11-06 2021-06-11 錼創顯示科技股份有限公司 半導體結構
TWI735212B (zh) * 2020-04-24 2021-08-01 環球晶圓股份有限公司 具有超晶格疊層體的磊晶結構
TW202306197A (zh) * 2021-07-23 2023-02-01 晶元光電股份有限公司 半導體元件
CN114464711B (zh) * 2021-12-31 2024-06-25 山东大学 一种深紫外发光二极管及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11214194A (ja) * 1998-01-30 1999-08-06 Kyocera Corp プラズマ処理装置用窓部材
EP2276059A1 (en) 2000-08-04 2011-01-19 The Regents of the University of California Method of controlling stress in gallium nitride films deposited on substrates
US6498131B1 (en) 2000-08-07 2002-12-24 Ekc Technology, Inc. Composition for cleaning chemical mechanical planarization apparatus
JP4700333B2 (ja) * 2003-12-22 2011-06-15 シルトロニック・ジャパン株式会社 シリコンウエーハ用の高純度アルカリエッチング液およびシリコンウエーハアルカリエッチング方法
JP2007088426A (ja) * 2005-08-25 2007-04-05 Furukawa Electric Co Ltd:The 半導体電子デバイス
US8362503B2 (en) * 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
EP2565907A4 (en) 2010-04-28 2013-12-04 Ngk Insulators Ltd EPITACTIC SUBSTRATE AND METHOD FOR PRODUCING THE EPITACTIC SUBSTRATE
JP5911727B2 (ja) * 2011-05-16 2016-04-27 株式会社東芝 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
JP5127978B1 (ja) * 2011-09-08 2013-01-23 株式会社東芝 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
JP2013069939A (ja) * 2011-09-23 2013-04-18 Sumitomo Chemical Co Ltd 半導体基板および半導体基板の製造方法
US8946773B2 (en) * 2012-08-09 2015-02-03 Samsung Electronics Co., Ltd. Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure
EP2696365B1 (en) * 2012-08-09 2021-06-23 Samsung Electronics Co., Ltd. Method of manufacturing a semiconductor device using a semiconductor buffer structure
JP5296255B1 (ja) * 2012-11-21 2013-09-25 株式会社東芝 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の形成方法
JP6121806B2 (ja) * 2013-06-07 2017-04-26 株式会社東芝 窒化物半導体ウェーハ、窒化物半導体素子及び窒化物半導体ウェーハの製造方法

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