JP2014236080A5 - - Google Patents

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Publication number
JP2014236080A5
JP2014236080A5 JP2013116030A JP2013116030A JP2014236080A5 JP 2014236080 A5 JP2014236080 A5 JP 2014236080A5 JP 2013116030 A JP2013116030 A JP 2013116030A JP 2013116030 A JP2013116030 A JP 2013116030A JP 2014236080 A5 JP2014236080 A5 JP 2014236080A5
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JP
Japan
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JP2013116030A
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English (en)
Japanese (ja)
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JP6029538B2 (ja
JP2014236080A (ja
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Application filed filed Critical
Priority claimed from JP2013116030A external-priority patent/JP6029538B2/ja
Priority to JP2013116030A priority Critical patent/JP6029538B2/ja
Priority to US14/891,942 priority patent/US9401420B2/en
Priority to PCT/JP2014/002407 priority patent/WO2014192229A1/ja
Priority to CN201480031054.2A priority patent/CN105247665B/zh
Priority to TW103116866A priority patent/TWI574310B/zh
Publication of JP2014236080A publication Critical patent/JP2014236080A/ja
Publication of JP2014236080A5 publication Critical patent/JP2014236080A5/ja
Publication of JP6029538B2 publication Critical patent/JP6029538B2/ja
Application granted granted Critical
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Anticipated expiration legal-status Critical

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JP2013116030A 2013-05-31 2013-05-31 半導体装置 Active JP6029538B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013116030A JP6029538B2 (ja) 2013-05-31 2013-05-31 半導体装置
US14/891,942 US9401420B2 (en) 2013-05-31 2014-05-02 Semiconductor device
PCT/JP2014/002407 WO2014192229A1 (ja) 2013-05-31 2014-05-02 半導体装置
CN201480031054.2A CN105247665B (zh) 2013-05-31 2014-05-02 半导体装置
TW103116866A TWI574310B (zh) 2013-05-31 2014-05-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013116030A JP6029538B2 (ja) 2013-05-31 2013-05-31 半導体装置

Publications (3)

Publication Number Publication Date
JP2014236080A JP2014236080A (ja) 2014-12-15
JP2014236080A5 true JP2014236080A5 (enExample) 2015-12-24
JP6029538B2 JP6029538B2 (ja) 2016-11-24

Family

ID=51988284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013116030A Active JP6029538B2 (ja) 2013-05-31 2013-05-31 半導体装置

Country Status (5)

Country Link
US (1) US9401420B2 (enExample)
JP (1) JP6029538B2 (enExample)
CN (1) CN105247665B (enExample)
TW (1) TWI574310B (enExample)
WO (1) WO2014192229A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6615075B2 (ja) 2016-09-15 2019-12-04 サンケン電気株式会社 半導体デバイス用基板、半導体デバイス、及び、半導体デバイス用基板の製造方法
CN112820773B (zh) * 2019-11-18 2024-05-07 联华电子股份有限公司 一种高电子迁移率晶体管
JP7491942B2 (ja) * 2019-11-21 2024-05-28 日本碍子株式会社 １３族元素窒化物結晶層、自立基板および機能素子

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69633203T2 (de) * 1995-09-18 2005-09-01 Hitachi, Ltd. Halbleiterlaservorrichtungen
EP0942459B1 (en) * 1997-04-11 2012-03-21 Nichia Corporation Method of growing nitride semiconductors
US6255198B1 (en) * 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
JP3986887B2 (ja) * 2002-05-17 2007-10-03 松下電器産業株式会社 半導体装置
US7052942B1 (en) * 2003-09-19 2006-05-30 Rf Micro Devices, Inc. Surface passivation of GaN devices in epitaxial growth chamber
US7326971B2 (en) * 2005-06-08 2008-02-05 Cree, Inc. Gallium nitride based high-electron mobility devices
JP5309451B2 (ja) * 2007-02-19 2013-10-09 サンケン電気株式会社 半導体ウエーハ及び半導体素子及び製造方法
US8067787B2 (en) * 2008-02-07 2011-11-29 The Furukawa Electric Co., Ltd Semiconductor electronic device
JP2010219176A (ja) * 2009-03-16 2010-09-30 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP5477685B2 (ja) * 2009-03-19 2014-04-23 サンケン電気株式会社 半導体ウェーハ及び半導体素子及びその製造方法
JP5572976B2 (ja) * 2009-03-26 2014-08-20 サンケン電気株式会社 半導体装置
JP5564842B2 (ja) * 2009-07-10 2014-08-06 サンケン電気株式会社 半導体装置

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