DE69622277T2 - Halbleitermaterial, verfahren zur herstellung des halbleitermaterials und eine halbleitervorrichtung - Google Patents

Halbleitermaterial, verfahren zur herstellung des halbleitermaterials und eine halbleitervorrichtung

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Publication number
DE69622277T2
DE69622277T2 DE69622277T DE69622277T DE69622277T2 DE 69622277 T2 DE69622277 T2 DE 69622277T2 DE 69622277 T DE69622277 T DE 69622277T DE 69622277 T DE69622277 T DE 69622277T DE 69622277 T2 DE69622277 T2 DE 69622277T2
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Prior art keywords
semiconductor material
semiconductor
producing
semiconductor device
producing semiconductor
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Expired - Lifetime
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DE69622277T
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English (en)
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DE69622277D1 (de
Inventor
Toshiaki Tanaka
Shigeru Aoki
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Opnext Japan Inc
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Hitachi Ltd
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Publication of DE69622277T2 publication Critical patent/DE69622277T2/de
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Expired - Lifetime legal-status Critical Current

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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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    • H01S5/42—Arrays of surface emitting lasers
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DE69622277T 1995-09-18 1996-09-17 Halbleitermaterial, verfahren zur herstellung des halbleitermaterials und eine halbleitervorrichtung Expired - Lifetime DE69622277T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP23814295 1995-09-18
JP23165896 1996-09-02
PCT/JP1996/002663 WO1997011518A1 (en) 1995-09-18 1996-09-17 Semiconductor material, method of producing the semiconductor material, and semiconductor device

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DE69622277D1 DE69622277D1 (de) 2002-08-14
DE69622277T2 true DE69622277T2 (de) 2003-03-27

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DE69622277T Expired - Lifetime DE69622277T2 (de) 1995-09-18 1996-09-17 Halbleitermaterial, verfahren zur herstellung des halbleitermaterials und eine halbleitervorrichtung

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US (2) US6377596B1 (de)
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JP3830051B2 (ja) 2006-10-04
DE69622277D1 (de) 2002-08-14
US6459712B2 (en) 2002-10-01
EP0852416B1 (de) 2002-07-10
DE69633203T2 (de) 2005-09-01
EP0852416A1 (de) 1998-07-08
EP1081818B1 (de) 2004-08-18
DE69633203D1 (de) 2004-09-23
AU6946196A (en) 1997-04-09
EP0852416A4 (de) 1999-04-07
US6377596B1 (en) 2002-04-23

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