CN105247665B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN105247665B
CN105247665B CN201480031054.2A CN201480031054A CN105247665B CN 105247665 B CN105247665 B CN 105247665B CN 201480031054 A CN201480031054 A CN 201480031054A CN 105247665 B CN105247665 B CN 105247665B
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Chinese (zh)
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CN105247665A (zh
Inventor
鹿内洋志
佐藤宪
后藤博
后藤博一
篠宫胜
土屋庆太郎
萩本和德
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Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
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Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CN201480031054.2A 2013-05-31 2014-05-02 半导体装置 Active CN105247665B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013116030A JP6029538B2 (ja) 2013-05-31 2013-05-31 半導体装置
JP2013-116030 2013-05-31
PCT/JP2014/002407 WO2014192229A1 (ja) 2013-05-31 2014-05-02 半導体装置

Publications (2)

Publication Number Publication Date
CN105247665A CN105247665A (zh) 2016-01-13
CN105247665B true CN105247665B (zh) 2018-01-23

Family

ID=51988284

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480031054.2A Active CN105247665B (zh) 2013-05-31 2014-05-02 半导体装置

Country Status (5)

Country Link
US (1) US9401420B2 (enExample)
JP (1) JP6029538B2 (enExample)
CN (1) CN105247665B (enExample)
TW (1) TWI574310B (enExample)
WO (1) WO2014192229A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6615075B2 (ja) 2016-09-15 2019-12-04 サンケン電気株式会社 半導体デバイス用基板、半導体デバイス、及び、半導体デバイス用基板の製造方法
CN112820773B (zh) * 2019-11-18 2024-05-07 联华电子股份有限公司 一种高电子迁移率晶体管
JP7491942B2 (ja) * 2019-11-21 2024-05-28 日本碍子株式会社 １３族元素窒化物結晶層、自立基板および機能素子

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000031783A1 (en) * 1998-11-24 2000-06-02 North Carolina State University Fabrication of gallium nitride layers on silicon
EP1081818A2 (en) * 1995-09-18 2001-03-07 Hitachi, Ltd. Semiconductor laser devices
US20030213975A1 (en) * 2002-05-17 2003-11-20 Matsushita Electric Industrial Co, Ltd. Semiconductor device
CN1516238A (zh) * 1997-04-11 2004-07-28 ���ǻ�ѧ��ҵ��ʽ���� 氮化物半导体的生长方法、氮化物半导体衬底及器件
US7326971B2 (en) * 2005-06-08 2008-02-05 Cree, Inc. Gallium nitride based high-electron mobility devices
US7408182B1 (en) * 2003-09-19 2008-08-05 Rf Micro Devices, Inc. Surface passivation of GaN devices in epitaxial growth chamber
JP2008205117A (ja) * 2007-02-19 2008-09-04 Sanken Electric Co Ltd 半導体ウエーハ及び半導体素子及び製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8067787B2 (en) * 2008-02-07 2011-11-29 The Furukawa Electric Co., Ltd Semiconductor electronic device
JP2010219176A (ja) * 2009-03-16 2010-09-30 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP5477685B2 (ja) * 2009-03-19 2014-04-23 サンケン電気株式会社 半導体ウェーハ及び半導体素子及びその製造方法
JP5572976B2 (ja) * 2009-03-26 2014-08-20 サンケン電気株式会社 半導体装置
JP5564842B2 (ja) * 2009-07-10 2014-08-06 サンケン電気株式会社 半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1081818A2 (en) * 1995-09-18 2001-03-07 Hitachi, Ltd. Semiconductor laser devices
CN1516238A (zh) * 1997-04-11 2004-07-28 ���ǻ�ѧ��ҵ��ʽ���� 氮化物半导体的生长方法、氮化物半导体衬底及器件
WO2000031783A1 (en) * 1998-11-24 2000-06-02 North Carolina State University Fabrication of gallium nitride layers on silicon
US20030213975A1 (en) * 2002-05-17 2003-11-20 Matsushita Electric Industrial Co, Ltd. Semiconductor device
US7408182B1 (en) * 2003-09-19 2008-08-05 Rf Micro Devices, Inc. Surface passivation of GaN devices in epitaxial growth chamber
US7326971B2 (en) * 2005-06-08 2008-02-05 Cree, Inc. Gallium nitride based high-electron mobility devices
JP2008205117A (ja) * 2007-02-19 2008-09-04 Sanken Electric Co Ltd 半導体ウエーハ及び半導体素子及び製造方法

Also Published As

Publication number Publication date
WO2014192229A1 (ja) 2014-12-04
US20160118486A1 (en) 2016-04-28
TWI574310B (zh) 2017-03-11
JP6029538B2 (ja) 2016-11-24
TW201507008A (zh) 2015-02-16
CN105247665A (zh) 2016-01-13
JP2014236080A (ja) 2014-12-15
US9401420B2 (en) 2016-07-26

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