JP2006004977A5 - - Google Patents

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Publication number
JP2006004977A5
JP2006004977A5 JP2004176676A JP2004176676A JP2006004977A5 JP 2006004977 A5 JP2006004977 A5 JP 2006004977A5 JP 2004176676 A JP2004176676 A JP 2004176676A JP 2004176676 A JP2004176676 A JP 2004176676A JP 2006004977 A5 JP2006004977 A5 JP 2006004977A5
Authority
JP
Japan
Prior art keywords
layer
barrier layer
effect transistor
field effect
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004176676A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006004977A (ja
JP4729872B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2004176676A external-priority patent/JP4729872B2/ja
Priority to JP2004176676A priority Critical patent/JP4729872B2/ja
Priority to PCT/JP2005/011006 priority patent/WO2005122234A1/en
Priority to DE112005001337T priority patent/DE112005001337B4/de
Priority to US11/578,965 priority patent/US7981744B2/en
Priority to TW094119288A priority patent/TWI299196B/zh
Publication of JP2006004977A publication Critical patent/JP2006004977A/ja
Publication of JP2006004977A5 publication Critical patent/JP2006004977A5/ja
Publication of JP4729872B2 publication Critical patent/JP4729872B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004176676A 2004-06-10 2004-06-15 電界効果トランジスタの製造方法 Expired - Fee Related JP4729872B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004176676A JP4729872B2 (ja) 2004-06-15 2004-06-15 電界効果トランジスタの製造方法
PCT/JP2005/011006 WO2005122234A1 (en) 2004-06-10 2005-06-09 Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth
DE112005001337T DE112005001337B4 (de) 2004-06-10 2005-06-09 Verfahren zur Herstellung eines FET
US11/578,965 US7981744B2 (en) 2004-06-10 2005-06-09 Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth
TW094119288A TWI299196B (en) 2004-06-10 2005-06-10 Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004176676A JP4729872B2 (ja) 2004-06-15 2004-06-15 電界効果トランジスタの製造方法

Publications (3)

Publication Number Publication Date
JP2006004977A JP2006004977A (ja) 2006-01-05
JP2006004977A5 true JP2006004977A5 (enExample) 2008-04-17
JP4729872B2 JP4729872B2 (ja) 2011-07-20

Family

ID=35773129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004176676A Expired - Fee Related JP4729872B2 (ja) 2004-06-10 2004-06-15 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JP4729872B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220927A (ja) * 2006-02-17 2007-08-30 Tokyo Univ Of Agriculture & Technology ＡｌＧａＮ三元混晶結晶の製造方法及び気相成長装置
JP5217151B2 (ja) * 2006-08-25 2013-06-19 日亜化学工業株式会社 電界効果トランジスタ及びその製造方法
JP5230560B2 (ja) * 2009-08-07 2013-07-10 コバレントマテリアル株式会社 化合物半導体基板とその製造方法
JP5286616B2 (ja) * 2011-07-22 2013-09-11 国立大学法人東京農工大学 ＡｌｘＧａ１−ｘＮ結晶の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11261051A (ja) * 1998-03-09 1999-09-24 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
US6849882B2 (en) * 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors

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