JP4729872B2 - 電界効果トランジスタの製造方法 - Google Patents

電界効果トランジスタの製造方法 Download PDF

Info

Publication number
JP4729872B2
JP4729872B2 JP2004176676A JP2004176676A JP4729872B2 JP 4729872 B2 JP4729872 B2 JP 4729872B2 JP 2004176676 A JP2004176676 A JP 2004176676A JP 2004176676 A JP2004176676 A JP 2004176676A JP 4729872 B2 JP4729872 B2 JP 4729872B2
Authority
JP
Japan
Prior art keywords
layer
barrier layer
effect transistor
field effect
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004176676A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006004977A5 (enExample
JP2006004977A (ja
Inventor
正芳 小嵜
宏治 平田
昌伸 千田
直樹 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2004176676A priority Critical patent/JP4729872B2/ja
Priority to PCT/JP2005/011006 priority patent/WO2005122234A1/en
Priority to DE112005001337T priority patent/DE112005001337B4/de
Priority to US11/578,965 priority patent/US7981744B2/en
Priority to TW094119288A priority patent/TWI299196B/zh
Publication of JP2006004977A publication Critical patent/JP2006004977A/ja
Publication of JP2006004977A5 publication Critical patent/JP2006004977A5/ja
Application granted granted Critical
Publication of JP4729872B2 publication Critical patent/JP4729872B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2004176676A 2004-06-10 2004-06-15 電界効果トランジスタの製造方法 Expired - Fee Related JP4729872B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004176676A JP4729872B2 (ja) 2004-06-15 2004-06-15 電界効果トランジスタの製造方法
PCT/JP2005/011006 WO2005122234A1 (en) 2004-06-10 2005-06-09 Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth
DE112005001337T DE112005001337B4 (de) 2004-06-10 2005-06-09 Verfahren zur Herstellung eines FET
US11/578,965 US7981744B2 (en) 2004-06-10 2005-06-09 Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth
TW094119288A TWI299196B (en) 2004-06-10 2005-06-10 Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004176676A JP4729872B2 (ja) 2004-06-15 2004-06-15 電界効果トランジスタの製造方法

Publications (3)

Publication Number Publication Date
JP2006004977A JP2006004977A (ja) 2006-01-05
JP2006004977A5 JP2006004977A5 (enExample) 2008-04-17
JP4729872B2 true JP4729872B2 (ja) 2011-07-20

Family

ID=35773129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004176676A Expired - Fee Related JP4729872B2 (ja) 2004-06-10 2004-06-15 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JP4729872B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220927A (ja) * 2006-02-17 2007-08-30 Tokyo Univ Of Agriculture & Technology ＡｌＧａＮ三元混晶結晶の製造方法及び気相成長装置
JP5217151B2 (ja) * 2006-08-25 2013-06-19 日亜化学工業株式会社 電界効果トランジスタ及びその製造方法
JP5230560B2 (ja) * 2009-08-07 2013-07-10 コバレントマテリアル株式会社 化合物半導体基板とその製造方法
JP5286616B2 (ja) * 2011-07-22 2013-09-11 国立大学法人東京農工大学 ＡｌｘＧａ１−ｘＮ結晶の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11261051A (ja) * 1998-03-09 1999-09-24 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
US6849882B2 (en) * 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors

Also Published As

Publication number Publication date
JP2006004977A (ja) 2006-01-05

Similar Documents

Publication Publication Date Title
JP4525894B2 (ja) 半導体素子形成用板状基体及びこの製造方法及びこれを使用した半導体素子
JP4381380B2 (ja) 半導体装置及びその製造方法
US9818855B2 (en) Semiconductor device
JP4530171B2 (ja) 半導体装置
JP5634681B2 (ja) 半導体素子
JP5749580B2 (ja) 半導体装置及び半導体装置の製造方法
US8592823B2 (en) Compound semiconductor device and method for manufacturing the same
JP5116977B2 (ja) 半導体素子
JP2003059948A (ja) 半導体装置及びその製造方法
US20220376074A1 (en) Nitride-based semiconductor device and method for manufacturing the same
JP4888537B2 (ja) Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス
US9379102B2 (en) Nitride-based semiconductor device
JP5101143B2 (ja) 電界効果トランジスタ及びその製造方法
JP4729872B2 (ja) 電界効果トランジスタの製造方法
JP5223202B2 (ja) 半導体基板及び半導体装置
JP4682541B2 (ja) 半導体の結晶成長方法
JP2006004977A5 (enExample)
US7432538B2 (en) Field-effect transistor
JP6168978B2 (ja) 窒化物半導体装置およびその製造方法、ならびにダイオードおよび電界効果トランジスタ
JP2007088252A5 (enExample)
JP2012064977A (ja) Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス
JP2011258782A (ja) 窒化物半導体基板
JP2007123824A (ja) Ｉｉｉ族窒化物系化合物半導体を用いた電子装置
WO2023184199A1 (en) Nitride-based semiconductor device and method for manufacturing the same
WO2024040465A1 (en) Nitride-based semiconductor device and method for manufacturing the same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060830

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080304

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100824

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101021

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110322

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110404

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140428

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees