JP2007088252A5 - - Google Patents
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- Publication number
- JP2007088252A5 JP2007088252A5 JP2005275897A JP2005275897A JP2007088252A5 JP 2007088252 A5 JP2007088252 A5 JP 2007088252A5 JP 2005275897 A JP2005275897 A JP 2005275897A JP 2005275897 A JP2005275897 A JP 2005275897A JP 2007088252 A5 JP2007088252 A5 JP 2007088252A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- field effect
- effect transistor
- carrier supply
- interface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000013078 crystal Substances 0.000 claims description 53
- 239000004065 semiconductor Substances 0.000 claims description 40
- 230000005669 field effect Effects 0.000 claims description 37
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 24
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 8
- -1 nitride compound Chemical class 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 99
- 230000004888 barrier function Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005275897A JP2007088252A (ja) | 2005-09-22 | 2005-09-22 | 電界効果トランジスタ |
| US11/523,095 US7432538B2 (en) | 2005-09-22 | 2006-09-19 | Field-effect transistor |
| CNB2006101278147A CN100499162C (zh) | 2005-09-22 | 2006-09-20 | 场效应晶体管 |
| DE102006000477A DE102006000477A1 (de) | 2005-09-22 | 2006-09-21 | Feldeffekttransistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005275897A JP2007088252A (ja) | 2005-09-22 | 2005-09-22 | 電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007088252A JP2007088252A (ja) | 2007-04-05 |
| JP2007088252A5 true JP2007088252A5 (enExample) | 2008-01-31 |
Family
ID=37852846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005275897A Withdrawn JP2007088252A (ja) | 2005-09-22 | 2005-09-22 | 電界効果トランジスタ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7432538B2 (enExample) |
| JP (1) | JP2007088252A (enExample) |
| CN (1) | CN100499162C (enExample) |
| DE (1) | DE102006000477A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101385132B (zh) * | 2006-02-10 | 2010-10-20 | 日本电气株式会社 | 半导体器件 |
| JP5566670B2 (ja) * | 2008-12-16 | 2014-08-06 | 古河電気工業株式会社 | ＧａＮ系電界効果トランジスタ |
| JP5702058B2 (ja) * | 2009-08-28 | 2015-04-15 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の作製方法 |
| JP5580009B2 (ja) * | 2009-08-28 | 2014-08-27 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の作製方法 |
| TWI484626B (zh) * | 2012-02-21 | 2015-05-11 | 璨圓光電股份有限公司 | 半導體發光元件及具有此半導體發光元件的發光裝置 |
| CN103107179B (zh) * | 2012-02-21 | 2017-04-26 | 晶元光电股份有限公司 | 一种发光组件及具有此发光组件的发光装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5192987A (en) | 1991-05-17 | 1993-03-09 | Apa Optics, Inc. | High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions |
| JP2000277536A (ja) | 1999-03-29 | 2000-10-06 | Nec Corp | 電界効果トランジスタ |
| JP2003151996A (ja) * | 2001-09-03 | 2003-05-23 | Nichia Chem Ind Ltd | ２次元電子ガスを用いた電子デバイス |
| JP4117535B2 (ja) * | 2001-11-30 | 2008-07-16 | 信越半導体株式会社 | 化合物半導体素子 |
| US7030428B2 (en) | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
| JP3733420B2 (ja) * | 2002-03-01 | 2006-01-11 | 独立行政法人産業技術総合研究所 | 窒化物半導体材料を用いたヘテロ接合電界効果型トランジスタ |
| US7112830B2 (en) * | 2002-11-25 | 2006-09-26 | Apa Enterprises, Inc. | Super lattice modification of overlying transistor |
| JP4385206B2 (ja) * | 2003-01-07 | 2009-12-16 | 日本電気株式会社 | 電界効果トランジスタ |
| WO2005062745A2 (en) * | 2003-10-10 | 2005-07-14 | The Regents Of The University Of California | GaN/AlGaN/GaN DISPERSION-FREE HIGH ELECTRON MOBILITY TRANSISTORS |
| JP2005183551A (ja) | 2003-12-17 | 2005-07-07 | Nec Corp | 半導体装置、電界効果トランジスタおよび電界効果トランジスタの製造方法 |
| US7612390B2 (en) * | 2004-02-05 | 2009-11-03 | Cree, Inc. | Heterojunction transistors including energy barriers |
| US7170111B2 (en) * | 2004-02-05 | 2007-01-30 | Cree, Inc. | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
| DE112005001337B4 (de) * | 2004-06-10 | 2010-07-01 | Toyoda Gosei Co., Ltd., Nishikasugai-gun | Verfahren zur Herstellung eines FET |
-
2005
- 2005-09-22 JP JP2005275897A patent/JP2007088252A/ja not_active Withdrawn
-
2006
- 2006-09-19 US US11/523,095 patent/US7432538B2/en not_active Expired - Fee Related
- 2006-09-20 CN CNB2006101278147A patent/CN100499162C/zh not_active Expired - Fee Related
- 2006-09-21 DE DE102006000477A patent/DE102006000477A1/de not_active Withdrawn
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