DE102006000477A1 - Feldeffekttransistor - Google Patents
Feldeffekttransistor Download PDFInfo
- Publication number
- DE102006000477A1 DE102006000477A1 DE102006000477A DE102006000477A DE102006000477A1 DE 102006000477 A1 DE102006000477 A1 DE 102006000477A1 DE 102006000477 A DE102006000477 A DE 102006000477A DE 102006000477 A DE102006000477 A DE 102006000477A DE 102006000477 A1 DE102006000477 A1 DE 102006000477A1
- Authority
- DE
- Germany
- Prior art keywords
- interface
- field effect
- layer
- effect transistor
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 55
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims description 40
- 239000000203 mixture Substances 0.000 claims description 12
- 230000007423 decrease Effects 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 113
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000012876 carrier material Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
- H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
Landscapes
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005275897A JP2007088252A (ja) | 2005-09-22 | 2005-09-22 | 電界効果トランジスタ |
| JP2005-275897 | 2005-09-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102006000477A1 true DE102006000477A1 (de) | 2007-04-05 |
Family
ID=37852846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102006000477A Withdrawn DE102006000477A1 (de) | 2005-09-22 | 2006-09-21 | Feldeffekttransistor |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7432538B2 (enExample) |
| JP (1) | JP2007088252A (enExample) |
| CN (1) | CN100499162C (enExample) |
| DE (1) | DE102006000477A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101385132B (zh) * | 2006-02-10 | 2010-10-20 | 日本电气株式会社 | 半导体器件 |
| JP5566670B2 (ja) * | 2008-12-16 | 2014-08-06 | 古河電気工業株式会社 | ＧａＮ系電界効果トランジスタ |
| JP5702058B2 (ja) * | 2009-08-28 | 2015-04-15 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の作製方法 |
| JP5580009B2 (ja) * | 2009-08-28 | 2014-08-27 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の作製方法 |
| TWI484626B (zh) * | 2012-02-21 | 2015-05-11 | 璨圓光電股份有限公司 | 半導體發光元件及具有此半導體發光元件的發光裝置 |
| CN103107179B (zh) * | 2012-02-21 | 2017-04-26 | 晶元光电股份有限公司 | 一种发光组件及具有此发光组件的发光装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5192987A (en) | 1991-05-17 | 1993-03-09 | Apa Optics, Inc. | High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions |
| JP2000277536A (ja) | 1999-03-29 | 2000-10-06 | Nec Corp | 電界効果トランジスタ |
| JP2003151996A (ja) * | 2001-09-03 | 2003-05-23 | Nichia Chem Ind Ltd | ２次元電子ガスを用いた電子デバイス |
| JP4117535B2 (ja) * | 2001-11-30 | 2008-07-16 | 信越半導体株式会社 | 化合物半導体素子 |
| US7030428B2 (en) | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
| JP3733420B2 (ja) * | 2002-03-01 | 2006-01-11 | 独立行政法人産業技術総合研究所 | 窒化物半導体材料を用いたヘテロ接合電界効果型トランジスタ |
| US7112830B2 (en) * | 2002-11-25 | 2006-09-26 | Apa Enterprises, Inc. | Super lattice modification of overlying transistor |
| JP4385206B2 (ja) * | 2003-01-07 | 2009-12-16 | 日本電気株式会社 | 電界効果トランジスタ |
| WO2005062745A2 (en) * | 2003-10-10 | 2005-07-14 | The Regents Of The University Of California | GaN/AlGaN/GaN DISPERSION-FREE HIGH ELECTRON MOBILITY TRANSISTORS |
| JP2005183551A (ja) | 2003-12-17 | 2005-07-07 | Nec Corp | 半導体装置、電界効果トランジスタおよび電界効果トランジスタの製造方法 |
| US7612390B2 (en) * | 2004-02-05 | 2009-11-03 | Cree, Inc. | Heterojunction transistors including energy barriers |
| US7170111B2 (en) * | 2004-02-05 | 2007-01-30 | Cree, Inc. | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
| DE112005001337B4 (de) * | 2004-06-10 | 2010-07-01 | Toyoda Gosei Co., Ltd., Nishikasugai-gun | Verfahren zur Herstellung eines FET |
-
2005
- 2005-09-22 JP JP2005275897A patent/JP2007088252A/ja not_active Withdrawn
-
2006
- 2006-09-19 US US11/523,095 patent/US7432538B2/en not_active Expired - Fee Related
- 2006-09-20 CN CNB2006101278147A patent/CN100499162C/zh not_active Expired - Fee Related
- 2006-09-21 DE DE102006000477A patent/DE102006000477A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007088252A (ja) | 2007-04-05 |
| CN100499162C (zh) | 2009-06-10 |
| US20070063220A1 (en) | 2007-03-22 |
| CN1937247A (zh) | 2007-03-28 |
| US7432538B2 (en) | 2008-10-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20130403 |