JP6029538B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP6029538B2
JP6029538B2 JP2013116030A JP2013116030A JP6029538B2 JP 6029538 B2 JP6029538 B2 JP 6029538B2 JP 2013116030 A JP2013116030 A JP 2013116030A JP 2013116030 A JP2013116030 A JP 2013116030A JP 6029538 B2 JP6029538 B2 JP 6029538B2
Authority
JP
Japan
Prior art keywords
layer
buffer
buffer layer
sublayer
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013116030A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014236080A (ja
JP2014236080A5 (enExample
Inventor
洋志 鹿内
洋志 鹿内
憲 佐藤
憲 佐藤
博一 後藤
博一 後藤
篠宮　勝
勝 篠宮
慶太郎 土屋
慶太郎 土屋
和徳 萩本
和徳 萩本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
Original Assignee
Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd, Shin Etsu Handotai Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP2013116030A priority Critical patent/JP6029538B2/ja
Priority to US14/891,942 priority patent/US9401420B2/en
Priority to PCT/JP2014/002407 priority patent/WO2014192229A1/ja
Priority to CN201480031054.2A priority patent/CN105247665B/zh
Priority to TW103116866A priority patent/TWI574310B/zh
Publication of JP2014236080A publication Critical patent/JP2014236080A/ja
Publication of JP2014236080A5 publication Critical patent/JP2014236080A5/ja
Application granted granted Critical
Publication of JP6029538B2 publication Critical patent/JP6029538B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2013116030A 2013-05-31 2013-05-31 半導体装置 Active JP6029538B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013116030A JP6029538B2 (ja) 2013-05-31 2013-05-31 半導体装置
US14/891,942 US9401420B2 (en) 2013-05-31 2014-05-02 Semiconductor device
PCT/JP2014/002407 WO2014192229A1 (ja) 2013-05-31 2014-05-02 半導体装置
CN201480031054.2A CN105247665B (zh) 2013-05-31 2014-05-02 半导体装置
TW103116866A TWI574310B (zh) 2013-05-31 2014-05-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013116030A JP6029538B2 (ja) 2013-05-31 2013-05-31 半導体装置

Publications (3)

Publication Number Publication Date
JP2014236080A JP2014236080A (ja) 2014-12-15
JP2014236080A5 JP2014236080A5 (enExample) 2015-12-24
JP6029538B2 true JP6029538B2 (ja) 2016-11-24

Family

ID=51988284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013116030A Active JP6029538B2 (ja) 2013-05-31 2013-05-31 半導体装置

Country Status (5)

Country Link
US (1) US9401420B2 (enExample)
JP (1) JP6029538B2 (enExample)
CN (1) CN105247665B (enExample)
TW (1) TWI574310B (enExample)
WO (1) WO2014192229A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6615075B2 (ja) 2016-09-15 2019-12-04 サンケン電気株式会社 半導体デバイス用基板、半導体デバイス、及び、半導体デバイス用基板の製造方法
CN112820773B (zh) * 2019-11-18 2024-05-07 联华电子股份有限公司 一种高电子迁移率晶体管
JP7491942B2 (ja) * 2019-11-21 2024-05-28 日本碍子株式会社 １３族元素窒化物結晶層、自立基板および機能素子

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69633203T2 (de) * 1995-09-18 2005-09-01 Hitachi, Ltd. Halbleiterlaservorrichtungen
EP0942459B1 (en) * 1997-04-11 2012-03-21 Nichia Corporation Method of growing nitride semiconductors
US6255198B1 (en) * 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
JP3986887B2 (ja) * 2002-05-17 2007-10-03 松下電器産業株式会社 半導体装置
US7052942B1 (en) * 2003-09-19 2006-05-30 Rf Micro Devices, Inc. Surface passivation of GaN devices in epitaxial growth chamber
US7326971B2 (en) * 2005-06-08 2008-02-05 Cree, Inc. Gallium nitride based high-electron mobility devices
JP5309451B2 (ja) * 2007-02-19 2013-10-09 サンケン電気株式会社 半導体ウエーハ及び半導体素子及び製造方法
US8067787B2 (en) * 2008-02-07 2011-11-29 The Furukawa Electric Co., Ltd Semiconductor electronic device
JP2010219176A (ja) * 2009-03-16 2010-09-30 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP5477685B2 (ja) * 2009-03-19 2014-04-23 サンケン電気株式会社 半導体ウェーハ及び半導体素子及びその製造方法
JP5572976B2 (ja) * 2009-03-26 2014-08-20 サンケン電気株式会社 半導体装置
JP5564842B2 (ja) * 2009-07-10 2014-08-06 サンケン電気株式会社 半導体装置

Also Published As

Publication number Publication date
WO2014192229A1 (ja) 2014-12-04
US20160118486A1 (en) 2016-04-28
TWI574310B (zh) 2017-03-11
TW201507008A (zh) 2015-02-16
CN105247665A (zh) 2016-01-13
JP2014236080A (ja) 2014-12-15
US9401420B2 (en) 2016-07-26
CN105247665B (zh) 2018-01-23

Similar Documents

Publication Publication Date Title
JP5309452B2 (ja) 半導体ウエーハ及び半導体素子及び製造方法
JP5804768B2 (ja) 半導体素子及びその製造方法
JP5572976B2 (ja) 半導体装置
JP5708187B2 (ja) 半導体装置
JP5631034B2 (ja) 窒化物半導体エピタキシャル基板
WO2013008461A1 (ja) Iii族窒化物エピタキシャル基板およびその製造方法
JP6180401B2 (ja) エピタキシャルウェーハ、半導体素子、エピタキシャルウェーハの製造方法、並びに、半導体素子の製造方法
JP5159858B2 (ja) 窒化ガリウム系化合物半導体基板とその製造方法
CN103460360A (zh) 半导体元件及其制造方法
JP5689245B2 (ja) 窒化物半導体素子
TWI624879B (zh) Epitaxial substrate for electronic component, electronic component, method for producing epitaxial substrate for electronic component, and method for manufacturing electronic component
JP2011187654A (ja) Ｉｉｉ族窒化物半導体からなるｈｅｍｔ、およびその製造方法
JP6126906B2 (ja) 窒化物半導体エピタキシャルウェハ
JP6138974B2 (ja) 半導体基板
JP6029538B2 (ja) 半導体装置
WO2014192227A1 (ja) 半導体基板、半導体装置、及び、半導体装置の製造方法
JPWO2017145199A1 (ja) 半導体基体及び半導体装置
JP6239017B2 (ja) 窒化物半導体基板
US20160079408A1 (en) Semiconductor device and a method of manufacturing the same
JP2015103665A (ja) 窒化物半導体エピタキシャルウエハおよび窒化物半導体
JP6174253B2 (ja) 窒化物系化合物半導体
JP2016149511A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151106

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160119

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20161004

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161018

R150 Certificate of patent or registration of utility model

Ref document number: 6029538

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250