JP2013517622A5 - - Google Patents

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Publication number
JP2013517622A5
JP2013517622A5 JP2012548509A JP2012548509A JP2013517622A5 JP 2013517622 A5 JP2013517622 A5 JP 2013517622A5 JP 2012548509 A JP2012548509 A JP 2012548509A JP 2012548509 A JP2012548509 A JP 2012548509A JP 2013517622 A5 JP2013517622 A5 JP 2013517622A5
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JP
Japan
Prior art keywords
seed layer
region
semiconductor structure
interface
regions
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JP2012548509A
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English (en)
Japanese (ja)
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JP2013517622A (ja
JP5727514B2 (ja
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Priority claimed from US12/688,382 external-priority patent/US8105852B2/en
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Publication of JP2013517622A publication Critical patent/JP2013517622A/ja
Publication of JP2013517622A5 publication Critical patent/JP2013517622A5/ja
Application granted granted Critical
Publication of JP5727514B2 publication Critical patent/JP5727514B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012548509A 2010-01-15 2011-01-10 複合基板を形成し当該複合基板にｉｉｉ−ｖ発光装置を成長させる方法 Expired - Fee Related JP5727514B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/688,382 US8105852B2 (en) 2010-01-15 2010-01-15 Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate
US12/688,382 2010-01-15
PCT/IB2011/050096 WO2011086494A1 (en) 2010-01-15 2011-01-10 Method of forming a composite substrate and growing a iii-v light emitting device over the composite substrate

Publications (3)

Publication Number Publication Date
JP2013517622A JP2013517622A (ja) 2013-05-16
JP2013517622A5 true JP2013517622A5 (enExample) 2014-02-20
JP5727514B2 JP5727514B2 (ja) 2015-06-03

Family

ID=43827123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012548509A Expired - Fee Related JP5727514B2 (ja) 2010-01-15 2011-01-10 複合基板を形成し当該複合基板にｉｉｉ−ｖ発光装置を成長させる方法

Country Status (7)

Country Link
US (1) US8105852B2 (enExample)
EP (1) EP2524400B1 (enExample)
JP (1) JP5727514B2 (enExample)
KR (2) KR101894691B1 (enExample)
CN (1) CN102696120B (enExample)
TW (1) TWI523256B (enExample)
WO (1) WO2011086494A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2529686Y2 (ja) 1987-02-13 1997-03-19 富士電機株式会社 自動販売機の搬出機構識別装置
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8536022B2 (en) * 2010-05-19 2013-09-17 Koninklijke Philips N.V. Method of growing composite substrate using a relaxed strained layer
US9450143B2 (en) * 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8686461B2 (en) 2011-01-03 2014-04-01 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) die having stepped substrates and method of fabrication
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US9646827B1 (en) 2011-08-23 2017-05-09 Soraa, Inc. Method for smoothing surface of a substrate containing gallium and nitrogen
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
CN105244423B (zh) * 2015-10-30 2018-11-20 漳州立达信光电子科技有限公司 无衬底led芯片的封装方法及无衬底led芯片
WO2018161300A1 (en) * 2017-03-09 2018-09-13 Enkris Semiconductor, Inc Stripped method for prepairing semiconductor structure
DE102019004261A1 (de) * 2019-06-18 2020-12-24 lnfineon Technologies AG Verfahren zum Bearbeiten einer Substratanordnung und Wafer-Verbundstruktur
CN110600435A (zh) * 2019-09-05 2019-12-20 方天琦 多层复合基板结构及其制备方法
GB2586862B (en) 2019-09-06 2021-12-15 Plessey Semiconductors Ltd LED precursor incorporating strain relaxing structure
GB2593693B (en) * 2020-03-30 2022-08-03 Plessey Semiconductors Ltd LED precursor

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
US6177688B1 (en) * 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
US6261929B1 (en) * 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
FR2817394B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
JP4422473B2 (ja) * 2003-01-20 2010-02-24 パナソニック株式会社 Ｉｉｉ族窒化物基板の製造方法
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
EP2750194A1 (en) * 2005-06-22 2014-07-02 Seoul Viosys Co., Ltd. Light emitting device comprising a plurality of light emitting diode cells
US7273798B2 (en) * 2005-08-01 2007-09-25 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Gallium nitride device substrate containing a lattice parameter altering element
JP2007048869A (ja) * 2005-08-09 2007-02-22 Sony Corp ＧａＮ系半導体発光素子の製造方法
US7795050B2 (en) * 2005-08-12 2010-09-14 Samsung Electronics Co., Ltd. Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same
KR100753152B1 (ko) * 2005-08-12 2007-08-30 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
US8334155B2 (en) * 2005-09-27 2012-12-18 Philips Lumileds Lighting Company Llc Substrate for growing a III-V light emitting device
JP2007142345A (ja) * 2005-11-22 2007-06-07 Rohm Co Ltd 窒化物半導体発光素子
JP4807081B2 (ja) * 2006-01-16 2011-11-02 ソニー株式会社 ＧａＮ系化合物半導体から成る下地層の形成方法、並びに、ＧａＮ系半導体発光素子の製造方法
US7692198B2 (en) * 2007-02-19 2010-04-06 Alcatel-Lucent Usa Inc. Wide-bandgap semiconductor devices
FR2936903B1 (fr) * 2008-10-07 2011-01-14 Soitec Silicon On Insulator Relaxation d'une couche de materiau contraint avec application d'un raidisseur

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