JP2016518713A5 - - Google Patents

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Publication number
JP2016518713A5
JP2016518713A5 JP2016507081A JP2016507081A JP2016518713A5 JP 2016518713 A5 JP2016518713 A5 JP 2016518713A5 JP 2016507081 A JP2016507081 A JP 2016507081A JP 2016507081 A JP2016507081 A JP 2016507081A JP 2016518713 A5 JP2016518713 A5 JP 2016518713A5
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Japan
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light emitting
semiconductor light
growth substrate
emitting devices
semiconductor
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JP2016507081A
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English (en)
Japanese (ja)
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JP6680670B2 (ja
JP2016518713A (ja
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Priority claimed from PCT/IB2014/060310 external-priority patent/WO2014167455A2/en
Publication of JP2016518713A publication Critical patent/JP2016518713A/ja
Publication of JP2016518713A5 publication Critical patent/JP2016518713A5/ja
Priority to JP2019147637A priority Critical patent/JP6933691B2/ja
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Publication of JP6680670B2 publication Critical patent/JP6680670B2/ja
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JP2016507081A 2013-04-11 2014-03-31 トップエミッション型半導体発光デバイス Active JP6680670B2 (ja)

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JP2019147637A JP6933691B2 (ja) 2013-04-11 2019-08-09 トップエミッション型半導体発光デバイス

Applications Claiming Priority (5)

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US201361810833P 2013-04-11 2013-04-11
US61/810,833 2013-04-11
US201361900466P 2013-11-06 2013-11-06
US61/900,466 2013-11-06
PCT/IB2014/060310 WO2014167455A2 (en) 2013-04-11 2014-03-31 Top emitting semiconductor light emitting device

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JP2016518713A JP2016518713A (ja) 2016-06-23
JP2016518713A5 true JP2016518713A5 (enExample) 2017-05-18
JP6680670B2 JP6680670B2 (ja) 2020-04-15

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JP2019147637A Active JP6933691B2 (ja) 2013-04-11 2019-08-09 トップエミッション型半導体発光デバイス

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US (1) US9871167B2 (enExample)
EP (1) EP2984685B1 (enExample)
JP (2) JP6680670B2 (enExample)
KR (1) KR102245056B1 (enExample)
CN (3) CN111628062A (enExample)
TW (1) TWI659551B (enExample)
WO (1) WO2014167455A2 (enExample)

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