JP2013162130A5 - - Google Patents

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Publication number
JP2013162130A5
JP2013162130A5 JP2013020468A JP2013020468A JP2013162130A5 JP 2013162130 A5 JP2013162130 A5 JP 2013162130A5 JP 2013020468 A JP2013020468 A JP 2013020468A JP 2013020468 A JP2013020468 A JP 2013020468A JP 2013162130 A5 JP2013162130 A5 JP 2013162130A5
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JP
Japan
Prior art keywords
layer
emitting diode
light emitting
semiconductor stack
diode device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013020468A
Other languages
English (en)
Japanese (ja)
Other versions
JP6145277B2 (ja
JP2013162130A (ja
Filing date
Publication date
Priority claimed from US13/367,781 external-priority patent/US8957429B2/en
Application filed filed Critical
Publication of JP2013162130A publication Critical patent/JP2013162130A/ja
Publication of JP2013162130A5 publication Critical patent/JP2013162130A5/ja
Application granted granted Critical
Publication of JP6145277B2 publication Critical patent/JP6145277B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013020468A 2012-02-07 2013-02-05 波長変換層を有する発光ダイオード素子 Active JP6145277B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/367,781 US8957429B2 (en) 2012-02-07 2012-02-07 Light emitting diode with wavelength conversion layer
US13/367,781 2012-02-07

Publications (3)

Publication Number Publication Date
JP2013162130A JP2013162130A (ja) 2013-08-19
JP2013162130A5 true JP2013162130A5 (enExample) 2016-03-10
JP6145277B2 JP6145277B2 (ja) 2017-06-07

Family

ID=48794749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013020468A Active JP6145277B2 (ja) 2012-02-07 2013-02-05 波長変換層を有する発光ダイオード素子

Country Status (6)

Country Link
US (1) US8957429B2 (enExample)
JP (1) JP6145277B2 (enExample)
KR (1) KR101885316B1 (enExample)
CN (1) CN103247745B (enExample)
DE (1) DE102013101153B4 (enExample)
TW (1) TWI569478B (enExample)

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JP2900049B2 (ja) 1989-12-26 1999-06-02 オムロン株式会社 印字機能付きカード処理装置
WO2013118072A2 (en) 2012-02-10 2013-08-15 Koninklijke Philips N.V. Wavelength converted light emitting device
KR102034575B1 (ko) 2012-03-19 2019-10-21 루미리즈 홀딩 비.브이. 인광체의 도포 전 및 후의 발광 장치들에 대한 싱귤레이션
US9214610B2 (en) * 2012-08-24 2015-12-15 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
US8889439B2 (en) * 2012-08-24 2014-11-18 Tsmc Solid State Lighting Ltd. Method and apparatus for packaging phosphor-coated LEDs
US9246068B2 (en) * 2012-08-24 2016-01-26 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
US20140151630A1 (en) * 2012-12-04 2014-06-05 Feng-Hsu Fan Protection for the epitaxial structure of metal devices
US10439107B2 (en) * 2013-02-05 2019-10-08 Cree, Inc. Chip with integrated phosphor
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
CN106129231B (zh) * 2015-05-05 2019-11-22 新世纪光电股份有限公司 发光装置及其制作方法
TW201616689A (zh) * 2014-06-25 2016-05-01 皇家飛利浦有限公司 經封裝之波長轉換發光裝置
US10026882B2 (en) * 2014-10-07 2018-07-17 Epistar Corporation Using MEMS fabrication incorporating into LED device mounting and assembly
US10323803B2 (en) * 2014-11-18 2019-06-18 Seoul Semiconductor Co., Ltd. Light emitting device and vehicular lamp comprising same
US10297731B2 (en) 2014-11-26 2019-05-21 Bridgelux, Inc. Light emitting diode constructions and methods for making the same
CN105720173A (zh) * 2014-12-17 2016-06-29 日东电工株式会社 覆有荧光体层的光半导体元件和其制造方法
DE102015102460A1 (de) * 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines lichtemittierenden Bauteils und lichtemittierendes Bauteil
CN105304802A (zh) * 2015-10-12 2016-02-03 深圳万城节能股份有限公司 发光装置的制造方法
JP6447548B2 (ja) * 2016-03-14 2019-01-09 日亜化学工業株式会社 発光装置の製造方法
CN107689408B (zh) * 2016-08-04 2020-03-17 展晶科技(深圳)有限公司 发光二极管覆晶晶粒及显示器
JP6601552B2 (ja) * 2018-12-05 2019-11-06 日亜化学工業株式会社 発光装置の製造方法
TW202119652A (zh) * 2019-10-31 2021-05-16 隆達電子股份有限公司 顯示裝置及其製造方法
US12463077B2 (en) 2019-10-31 2025-11-04 Lextar Electronics Corporation Method of manufacturing display device
CN114664994B (zh) * 2020-12-22 2025-02-25 光宝光电(常州)有限公司 发光二极管结构

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US6756186B2 (en) 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
US7157745B2 (en) * 2004-04-09 2007-01-02 Blonder Greg E Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them
US7384807B2 (en) * 2003-06-04 2008-06-10 Verticle, Inc. Method of fabricating vertical structure compound semiconductor devices
JP4496774B2 (ja) 2003-12-22 2010-07-07 日亜化学工業株式会社 半導体装置の製造方法
US7420218B2 (en) * 2004-03-18 2008-09-02 Matsushita Electric Industrial Co., Ltd. Nitride based LED with a p-type injection region
WO2005105428A1 (ja) * 2004-04-28 2005-11-10 Zeon Corporation 積層体、発光素子及びその使用
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JP5091421B2 (ja) * 2006-04-07 2012-12-05 株式会社東芝 半導体発光装置
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TWI308401B (en) * 2006-07-04 2009-04-01 Epistar Corp High efficient phosphor-converted light emitting diode
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JP5141077B2 (ja) * 2007-04-03 2013-02-13 日亜化学工業株式会社 発光装置及びその製造方法
JP5158472B2 (ja) * 2007-05-24 2013-03-06 スタンレー電気株式会社 半導体発光装置
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CN101621101A (zh) * 2008-06-30 2010-01-06 展晶科技(深圳)有限公司 发光二极管及其制造方法
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JP4875185B2 (ja) * 2010-06-07 2012-02-15 株式会社東芝 光半導体装置
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