TWI569478B - 具有波長轉換層之發光二極體元件 - Google Patents

具有波長轉換層之發光二極體元件 Download PDF

Info

Publication number
TWI569478B
TWI569478B TW102102414A TW102102414A TWI569478B TW I569478 B TWI569478 B TW I569478B TW 102102414 A TW102102414 A TW 102102414A TW 102102414 A TW102102414 A TW 102102414A TW I569478 B TWI569478 B TW I569478B
Authority
TW
Taiwan
Prior art keywords
emitting diode
wavelength conversion
light
conversion layer
substrate
Prior art date
Application number
TW102102414A
Other languages
English (en)
Chinese (zh)
Other versions
TW201334237A (zh
Inventor
王志銘
陳昭興
沈建賦
Original Assignee
晶元光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶元光電股份有限公司 filed Critical 晶元光電股份有限公司
Publication of TW201334237A publication Critical patent/TW201334237A/zh
Application granted granted Critical
Publication of TWI569478B publication Critical patent/TWI569478B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
TW102102414A 2012-02-07 2013-01-22 具有波長轉換層之發光二極體元件 TWI569478B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/367,781 US8957429B2 (en) 2012-02-07 2012-02-07 Light emitting diode with wavelength conversion layer

Publications (2)

Publication Number Publication Date
TW201334237A TW201334237A (zh) 2013-08-16
TWI569478B true TWI569478B (zh) 2017-02-01

Family

ID=48794749

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102102414A TWI569478B (zh) 2012-02-07 2013-01-22 具有波長轉換層之發光二極體元件

Country Status (6)

Country Link
US (1) US8957429B2 (enExample)
JP (1) JP6145277B2 (enExample)
KR (1) KR101885316B1 (enExample)
CN (1) CN103247745B (enExample)
DE (1) DE102013101153B4 (enExample)
TW (1) TWI569478B (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2900049B2 (ja) 1989-12-26 1999-06-02 オムロン株式会社 印字機能付きカード処理装置
US9257617B2 (en) * 2012-02-10 2016-02-09 Koninklijke Philips N.V. Wavelength converted light emitting device
KR102034575B1 (ko) 2012-03-19 2019-10-21 루미리즈 홀딩 비.브이. 인광체의 도포 전 및 후의 발광 장치들에 대한 싱귤레이션
US9214610B2 (en) * 2012-08-24 2015-12-15 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
US8889439B2 (en) * 2012-08-24 2014-11-18 Tsmc Solid State Lighting Ltd. Method and apparatus for packaging phosphor-coated LEDs
US9246068B2 (en) * 2012-08-24 2016-01-26 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
US20140151630A1 (en) * 2012-12-04 2014-06-05 Feng-Hsu Fan Protection for the epitaxial structure of metal devices
US10439107B2 (en) * 2013-02-05 2019-10-08 Cree, Inc. Chip with integrated phosphor
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
TW201616689A (zh) 2014-06-25 2016-05-01 皇家飛利浦有限公司 經封裝之波長轉換發光裝置
US10026882B2 (en) * 2014-10-07 2018-07-17 Epistar Corporation Using MEMS fabrication incorporating into LED device mounting and assembly
US10323803B2 (en) * 2014-11-18 2019-06-18 Seoul Semiconductor Co., Ltd. Light emitting device and vehicular lamp comprising same
US10297731B2 (en) * 2014-11-26 2019-05-21 Bridgelux, Inc. Light emitting diode constructions and methods for making the same
CN105720173A (zh) * 2014-12-17 2016-06-29 日东电工株式会社 覆有荧光体层的光半导体元件和其制造方法
DE102015102460A1 (de) * 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines lichtemittierenden Bauteils und lichtemittierendes Bauteil
CN110767793A (zh) * 2015-05-05 2020-02-07 新世纪光电股份有限公司 发光装置及其制作方法
CN105304802A (zh) * 2015-10-12 2016-02-03 深圳万城节能股份有限公司 发光装置的制造方法
JP6447548B2 (ja) * 2016-03-14 2019-01-09 日亜化学工業株式会社 発光装置の製造方法
CN107689408B (zh) * 2016-08-04 2020-03-17 展晶科技(深圳)有限公司 发光二极管覆晶晶粒及显示器
JP6601552B2 (ja) * 2018-12-05 2019-11-06 日亜化学工業株式会社 発光装置の製造方法
US12463077B2 (en) 2019-10-31 2025-11-04 Lextar Electronics Corporation Method of manufacturing display device
TW202119652A (zh) * 2019-10-31 2021-05-16 隆達電子股份有限公司 顯示裝置及其製造方法
CN114664994B (zh) * 2020-12-22 2025-02-25 光宝光电(常州)有限公司 发光二极管结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080290351A1 (en) * 2007-05-24 2008-11-27 Shuichi Ajiki Semiconductor light emitting apparatus
US20090262517A1 (en) * 2008-04-03 2009-10-22 Toyoda Gosei Co., Ltd. Light source unit
US20090321769A1 (en) * 2006-01-09 2009-12-31 Cree, Inc. Method for coating semiconductor device using droplet deposition
US20100176475A1 (en) * 2009-01-09 2010-07-15 Panasonic Corporation Optical device and method for fabricating the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756186B2 (en) 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
US7157745B2 (en) * 2004-04-09 2007-01-02 Blonder Greg E Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them
US7384807B2 (en) * 2003-06-04 2008-06-10 Verticle, Inc. Method of fabricating vertical structure compound semiconductor devices
JP4496774B2 (ja) 2003-12-22 2010-07-07 日亜化学工業株式会社 半導体装置の製造方法
JP4805831B2 (ja) * 2004-03-18 2011-11-02 パナソニック株式会社 半導体発光装置、照明モジュール、照明装置、表面実装部品、および表示装置
US8547011B2 (en) * 2004-04-28 2013-10-01 Zeon Corporation Layered product, luminescence device and use thereof
JP5091421B2 (ja) * 2006-04-07 2012-12-05 株式会社東芝 半導体発光装置
US8080828B2 (en) * 2006-06-09 2011-12-20 Philips Lumileds Lighting Company, Llc Low profile side emitting LED with window layer and phosphor layer
TWI308401B (en) * 2006-07-04 2009-04-01 Epistar Corp High efficient phosphor-converted light emitting diode
DE102007021009A1 (de) * 2006-09-27 2008-04-10 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen
JP5141077B2 (ja) * 2007-04-03 2013-02-13 日亜化学工業株式会社 発光装置及びその製造方法
TWI396298B (zh) * 2007-08-29 2013-05-11 Everlight Electronics Co Ltd 發光半導體元件塗佈螢光粉的方法及其應用
RU2489774C2 (ru) * 2007-11-29 2013-08-10 Нития Корпорейшн Светоизлучающее устройство и способ его изготовления
CN101621101A (zh) * 2008-06-30 2010-01-06 展晶科技(深圳)有限公司 发光二极管及其制造方法
BR112012020317B1 (pt) * 2010-02-09 2020-10-13 Nichia Corporation dispositivo emissor de luz
JP4875185B2 (ja) * 2010-06-07 2012-02-15 株式会社東芝 光半導体装置
US8241932B1 (en) * 2011-03-17 2012-08-14 Tsmc Solid State Lighting Ltd. Methods of fabricating light emitting diode packages
JP5656748B2 (ja) * 2011-05-16 2015-01-21 シチズンホールディングス株式会社 半導体発光素子の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090321769A1 (en) * 2006-01-09 2009-12-31 Cree, Inc. Method for coating semiconductor device using droplet deposition
US20080290351A1 (en) * 2007-05-24 2008-11-27 Shuichi Ajiki Semiconductor light emitting apparatus
US20090262517A1 (en) * 2008-04-03 2009-10-22 Toyoda Gosei Co., Ltd. Light source unit
US20100176475A1 (en) * 2009-01-09 2010-07-15 Panasonic Corporation Optical device and method for fabricating the same

Also Published As

Publication number Publication date
KR20130091273A (ko) 2013-08-16
TW201334237A (zh) 2013-08-16
US20130200398A1 (en) 2013-08-08
DE102013101153B4 (de) 2022-11-17
US8957429B2 (en) 2015-02-17
KR101885316B1 (ko) 2018-08-03
CN103247745A (zh) 2013-08-14
JP6145277B2 (ja) 2017-06-07
CN103247745B (zh) 2017-12-05
DE102013101153A1 (de) 2013-08-08
JP2013162130A (ja) 2013-08-19

Similar Documents

Publication Publication Date Title
TWI569478B (zh) 具有波長轉換層之發光二極體元件
JP5869080B2 (ja) 発光素子
JP6049644B2 (ja) Ｌｅｄ発光装置及びその製造方法
JP5782332B2 (ja) 発光素子
JP2015144147A (ja) Ｌｅｄモジュール
JP7004948B2 (ja) 発光モジュールの製造方法
US20130105978A1 (en) Silicon submount for light emitting diode and method of forming the same
TW201143140A (en) Semiconductor light emitting device and method for manufacturing same
CN110178232B (zh) 发光二极管、发光二极管模块以及具有其的显示装置
TW201511347A (zh) 發光二極體封裝結構及其製造方法
JP2015195244A (ja) 半導体ユニット、半導体素子、発光装置、表示装置、半導体素子の製造方法
CN109950380A (zh) 发光二极管封装
JP6407544B2 (ja) Ｌｅｄ発光装置及びｌｅｄ発光装置の製造方法
US20140063822A1 (en) Wiring board, light-emitting device, and method of manufacturing the wiring board
KR101253183B1 (ko) 인쇄회로기판, 이를 포함하는 발광 장치 및 그 제조 방법
KR20170095016A (ko) 반도체 발광 소자 패키지
US20120012873A1 (en) Light emitting diode package for microminiaturization
US10777723B2 (en) LED package structure, heat-dissipating substrate, method for manufacturing LED package structure, and method for manufacturing heat-dissipating substrate
CN107393428B (zh) 无电极遮光的发光二极管显示器的结构及其工艺
KR101121151B1 (ko) Ｌｅｄ 모듈 및 그 제조 방법
KR101533068B1 (ko) 인쇄 회로 기판 및 이를 구비하는 전자 소자 조립체
JP7665871B2 (ja) 発光モジュール、発光モジュールの製造方法及び表示装置
CN110416229A (zh) 一种显示面板及其制作方法、显示装置
TWM525550U (zh) 發光二極體封裝結構
TW201507220A (zh) 光學模組及其製造方法