CN103247745B - 具有波长转换层的发光二极管元件 - Google Patents

具有波长转换层的发光二极管元件 Download PDF

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Publication number
CN103247745B
CN103247745B CN201310039776.XA CN201310039776A CN103247745B CN 103247745 B CN103247745 B CN 103247745B CN 201310039776 A CN201310039776 A CN 201310039776A CN 103247745 B CN103247745 B CN 103247745B
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China
Prior art keywords
light
wavelength conversion
conversion layer
emitting diode
substrate
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CN201310039776.XA
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Chinese (zh)
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CN103247745A (zh
Inventor
王志铭
陈昭兴
沈建赋
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Epistar Corp
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Epistar Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
CN201310039776.XA 2012-02-07 2013-01-31 具有波长转换层的发光二极管元件 Active CN103247745B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/367,781 US8957429B2 (en) 2012-02-07 2012-02-07 Light emitting diode with wavelength conversion layer
US13/367,781 2012-02-07

Publications (2)

Publication Number Publication Date
CN103247745A CN103247745A (zh) 2013-08-14
CN103247745B true CN103247745B (zh) 2017-12-05

Family

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Family Applications (1)

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CN201310039776.XA Active CN103247745B (zh) 2012-02-07 2013-01-31 具有波长转换层的发光二极管元件

Country Status (6)

Country Link
US (1) US8957429B2 (enExample)
JP (1) JP6145277B2 (enExample)
KR (1) KR101885316B1 (enExample)
CN (1) CN103247745B (enExample)
DE (1) DE102013101153B4 (enExample)
TW (1) TWI569478B (enExample)

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CN104205365B (zh) 2012-03-19 2020-06-16 亮锐控股有限公司 磷光体施加前后发光器件的单个化
US9246068B2 (en) * 2012-08-24 2016-01-26 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
US9214610B2 (en) * 2012-08-24 2015-12-15 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
US8889439B2 (en) * 2012-08-24 2014-11-18 Tsmc Solid State Lighting Ltd. Method and apparatus for packaging phosphor-coated LEDs
US20140151630A1 (en) * 2012-12-04 2014-06-05 Feng-Hsu Fan Protection for the epitaxial structure of metal devices
US10439107B2 (en) * 2013-02-05 2019-10-08 Cree, Inc. Chip with integrated phosphor
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
CN106129231B (zh) * 2015-05-05 2019-11-22 新世纪光电股份有限公司 发光装置及其制作方法
TW201616689A (zh) * 2014-06-25 2016-05-01 皇家飛利浦有限公司 經封裝之波長轉換發光裝置
US10026882B2 (en) * 2014-10-07 2018-07-17 Epistar Corporation Using MEMS fabrication incorporating into LED device mounting and assembly
WO2016080768A1 (ko) * 2014-11-18 2016-05-26 서울반도체 주식회사 발광 장치 및 이를 포함하는 차량용 램프
US10297731B2 (en) * 2014-11-26 2019-05-21 Bridgelux, Inc. Light emitting diode constructions and methods for making the same
CN105720173A (zh) * 2014-12-17 2016-06-29 日东电工株式会社 覆有荧光体层的光半导体元件和其制造方法
DE102015102460A1 (de) * 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines lichtemittierenden Bauteils und lichtemittierendes Bauteil
CN105304802A (zh) * 2015-10-12 2016-02-03 深圳万城节能股份有限公司 发光装置的制造方法
JP6447548B2 (ja) * 2016-03-14 2019-01-09 日亜化学工業株式会社 発光装置の製造方法
CN107689408B (zh) * 2016-08-04 2020-03-17 展晶科技(深圳)有限公司 发光二极管覆晶晶粒及显示器
JP6601552B2 (ja) * 2018-12-05 2019-11-06 日亜化学工業株式会社 発光装置の製造方法
US12463077B2 (en) 2019-10-31 2025-11-04 Lextar Electronics Corporation Method of manufacturing display device
TW202119652A (zh) * 2019-10-31 2021-05-16 隆達電子股份有限公司 顯示裝置及其製造方法
CN114664994B (zh) * 2020-12-22 2025-02-25 光宝光电(常州)有限公司 发光二极管结构

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US6756186B2 (en) 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
US7157745B2 (en) * 2004-04-09 2007-01-02 Blonder Greg E Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them
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JP4496774B2 (ja) 2003-12-22 2010-07-07 日亜化学工業株式会社 半導体装置の製造方法
US7420218B2 (en) * 2004-03-18 2008-09-02 Matsushita Electric Industrial Co., Ltd. Nitride based LED with a p-type injection region
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TWI308401B (en) * 2006-07-04 2009-04-01 Epistar Corp High efficient phosphor-converted light emitting diode
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JP5141077B2 (ja) * 2007-04-03 2013-02-13 日亜化学工業株式会社 発光装置及びその製造方法
JP5158472B2 (ja) * 2007-05-24 2013-03-06 スタンレー電気株式会社 半導体発光装置
TWI396298B (zh) * 2007-08-29 2013-05-11 Everlight Electronics Co Ltd 發光半導體元件塗佈螢光粉的方法及其應用
CN101878540B (zh) * 2007-11-29 2013-11-06 日亚化学工业株式会社 发光装置及其制造方法
JP2009252898A (ja) * 2008-04-03 2009-10-29 Toyoda Gosei Co Ltd 光源装置
CN101621101A (zh) * 2008-06-30 2010-01-06 展晶科技(深圳)有限公司 发光二极管及其制造方法
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Also Published As

Publication number Publication date
US8957429B2 (en) 2015-02-17
DE102013101153A1 (de) 2013-08-08
KR20130091273A (ko) 2013-08-16
US20130200398A1 (en) 2013-08-08
JP2013162130A (ja) 2013-08-19
CN103247745A (zh) 2013-08-14
JP6145277B2 (ja) 2017-06-07
TWI569478B (zh) 2017-02-01
DE102013101153B4 (de) 2022-11-17
KR101885316B1 (ko) 2018-08-03
TW201334237A (zh) 2013-08-16

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