JP6145277B2 - 波長変換層を有する発光ダイオード素子 - Google Patents

波長変換層を有する発光ダイオード素子 Download PDF

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Publication number
JP6145277B2
JP6145277B2 JP2013020468A JP2013020468A JP6145277B2 JP 6145277 B2 JP6145277 B2 JP 6145277B2 JP 2013020468 A JP2013020468 A JP 2013020468A JP 2013020468 A JP2013020468 A JP 2013020468A JP 6145277 B2 JP6145277 B2 JP 6145277B2
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Japan
Prior art keywords
light emitting
emitting diode
wavelength conversion
layer
conversion layer
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JP2013020468A
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Japanese (ja)
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JP2013162130A (ja
JP2013162130A5 (enExample
Inventor
チ−ミン，ワン
チャオ−シン，チェン
チエン−フ，シェン
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Epistar Corp
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Epistar Corp
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Publication of JP2013162130A5 publication Critical patent/JP2013162130A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2013020468A 2012-02-07 2013-02-05 波長変換層を有する発光ダイオード素子 Active JP6145277B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/367,781 US8957429B2 (en) 2012-02-07 2012-02-07 Light emitting diode with wavelength conversion layer
US13/367,781 2012-02-07

Publications (3)

Publication Number Publication Date
JP2013162130A JP2013162130A (ja) 2013-08-19
JP2013162130A5 JP2013162130A5 (enExample) 2016-03-10
JP6145277B2 true JP6145277B2 (ja) 2017-06-07

Family

ID=48794749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013020468A Active JP6145277B2 (ja) 2012-02-07 2013-02-05 波長変換層を有する発光ダイオード素子

Country Status (6)

Country Link
US (1) US8957429B2 (enExample)
JP (1) JP6145277B2 (enExample)
KR (1) KR101885316B1 (enExample)
CN (1) CN103247745B (enExample)
DE (1) DE102013101153B4 (enExample)
TW (1) TWI569478B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2900049B2 (ja) 1989-12-26 1999-06-02 オムロン株式会社 印字機能付きカード処理装置

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WO2013118072A2 (en) 2012-02-10 2013-08-15 Koninklijke Philips N.V. Wavelength converted light emitting device
CN104205365B (zh) 2012-03-19 2020-06-16 亮锐控股有限公司 磷光体施加前后发光器件的单个化
US9246068B2 (en) * 2012-08-24 2016-01-26 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
US9214610B2 (en) * 2012-08-24 2015-12-15 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
US8889439B2 (en) * 2012-08-24 2014-11-18 Tsmc Solid State Lighting Ltd. Method and apparatus for packaging phosphor-coated LEDs
US20140151630A1 (en) * 2012-12-04 2014-06-05 Feng-Hsu Fan Protection for the epitaxial structure of metal devices
US10439107B2 (en) * 2013-02-05 2019-10-08 Cree, Inc. Chip with integrated phosphor
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
CN106129231B (zh) * 2015-05-05 2019-11-22 新世纪光电股份有限公司 发光装置及其制作方法
TW201616689A (zh) * 2014-06-25 2016-05-01 皇家飛利浦有限公司 經封裝之波長轉換發光裝置
US10026882B2 (en) * 2014-10-07 2018-07-17 Epistar Corporation Using MEMS fabrication incorporating into LED device mounting and assembly
WO2016080768A1 (ko) * 2014-11-18 2016-05-26 서울반도체 주식회사 발광 장치 및 이를 포함하는 차량용 램프
US10297731B2 (en) * 2014-11-26 2019-05-21 Bridgelux, Inc. Light emitting diode constructions and methods for making the same
CN105720173A (zh) * 2014-12-17 2016-06-29 日东电工株式会社 覆有荧光体层的光半导体元件和其制造方法
DE102015102460A1 (de) * 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines lichtemittierenden Bauteils und lichtemittierendes Bauteil
CN105304802A (zh) * 2015-10-12 2016-02-03 深圳万城节能股份有限公司 发光装置的制造方法
JP6447548B2 (ja) * 2016-03-14 2019-01-09 日亜化学工業株式会社 発光装置の製造方法
CN107689408B (zh) * 2016-08-04 2020-03-17 展晶科技(深圳)有限公司 发光二极管覆晶晶粒及显示器
JP6601552B2 (ja) * 2018-12-05 2019-11-06 日亜化学工業株式会社 発光装置の製造方法
US12463077B2 (en) 2019-10-31 2025-11-04 Lextar Electronics Corporation Method of manufacturing display device
TW202119652A (zh) * 2019-10-31 2021-05-16 隆達電子股份有限公司 顯示裝置及其製造方法
CN114664994B (zh) * 2020-12-22 2025-02-25 光宝光电(常州)有限公司 发光二极管结构

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US6756186B2 (en) 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
US7157745B2 (en) * 2004-04-09 2007-01-02 Blonder Greg E Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them
WO2004109764A2 (en) * 2003-06-04 2004-12-16 Myung Cheol Yoo Method of fabricating vertical structure compound semiconductor devices
JP4496774B2 (ja) 2003-12-22 2010-07-07 日亜化学工業株式会社 半導体装置の製造方法
US7420218B2 (en) * 2004-03-18 2008-09-02 Matsushita Electric Industrial Co., Ltd. Nitride based LED with a p-type injection region
US8547011B2 (en) * 2004-04-28 2013-10-01 Zeon Corporation Layered product, luminescence device and use thereof
US7569406B2 (en) * 2006-01-09 2009-08-04 Cree, Inc. Method for coating semiconductor device using droplet deposition
JP5091421B2 (ja) * 2006-04-07 2012-12-05 株式会社東芝 半導体発光装置
US8080828B2 (en) * 2006-06-09 2011-12-20 Philips Lumileds Lighting Company, Llc Low profile side emitting LED with window layer and phosphor layer
TWI308401B (en) * 2006-07-04 2009-04-01 Epistar Corp High efficient phosphor-converted light emitting diode
DE102007021009A1 (de) * 2006-09-27 2008-04-10 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen
JP5141077B2 (ja) * 2007-04-03 2013-02-13 日亜化学工業株式会社 発光装置及びその製造方法
JP5158472B2 (ja) * 2007-05-24 2013-03-06 スタンレー電気株式会社 半導体発光装置
TWI396298B (zh) * 2007-08-29 2013-05-11 Everlight Electronics Co Ltd 發光半導體元件塗佈螢光粉的方法及其應用
CN101878540B (zh) * 2007-11-29 2013-11-06 日亚化学工业株式会社 发光装置及其制造方法
JP2009252898A (ja) * 2008-04-03 2009-10-29 Toyoda Gosei Co Ltd 光源装置
CN101621101A (zh) * 2008-06-30 2010-01-06 展晶科技(深圳)有限公司 发光二极管及其制造方法
JP2010161321A (ja) * 2009-01-09 2010-07-22 Panasonic Corp 光学デバイスおよびその製造方法
US9196805B2 (en) * 2010-02-09 2015-11-24 Nichia Corporation Light emitting device and method for manufacturing light emitting device
JP4875185B2 (ja) * 2010-06-07 2012-02-15 株式会社東芝 光半導体装置
US8241932B1 (en) * 2011-03-17 2012-08-14 Tsmc Solid State Lighting Ltd. Methods of fabricating light emitting diode packages
JP5656748B2 (ja) * 2011-05-16 2015-01-21 シチズンホールディングス株式会社 半導体発光素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2900049B2 (ja) 1989-12-26 1999-06-02 オムロン株式会社 印字機能付きカード処理装置

Also Published As

Publication number Publication date
US8957429B2 (en) 2015-02-17
DE102013101153A1 (de) 2013-08-08
KR20130091273A (ko) 2013-08-16
US20130200398A1 (en) 2013-08-08
JP2013162130A (ja) 2013-08-19
CN103247745A (zh) 2013-08-14
TWI569478B (zh) 2017-02-01
DE102013101153B4 (de) 2022-11-17
KR101885316B1 (ko) 2018-08-03
CN103247745B (zh) 2017-12-05
TW201334237A (zh) 2013-08-16

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