JP2013162130A - 波長変換層を有する発光ダイオード素子 - Google Patents
波長変換層を有する発光ダイオード素子 Download PDFInfo
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- JP2013162130A JP2013162130A JP2013020468A JP2013020468A JP2013162130A JP 2013162130 A JP2013162130 A JP 2013162130A JP 2013020468 A JP2013020468 A JP 2013020468A JP 2013020468 A JP2013020468 A JP 2013020468A JP 2013162130 A JP2013162130 A JP 2013162130A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 7
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- 239000012790 adhesive layer Substances 0.000 claims description 50
- 230000000903 blocking effect Effects 0.000 claims description 26
- 239000000843 powder Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 abstract description 25
- 230000005496 eutectics Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 31
- 229920002050 silicone resin Polymers 0.000 description 11
- 229920002379 silicone rubber Polymers 0.000 description 10
- 239000004945 silicone rubber Substances 0.000 description 10
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- 229920000058 polyacrylate Polymers 0.000 description 8
- 239000004593 Epoxy Substances 0.000 description 5
- 239000013013 elastic material Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
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- 238000007639 printing Methods 0.000 description 5
- 239000012780 transparent material Substances 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
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- 238000005530 etching Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- 229910052737 gold Inorganic materials 0.000 description 2
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- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910017750 AgSn Inorganic materials 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
【解決手段】発光ダイオード素子2は半導体スタック層22、24、26を有し、且つ、電極28がベース12と結合される。発光ダイオード素子2の側壁7は、上部表面8及び下部表面10を有し、下部表面10は上部表面8よりもベース12に接近する。波長変換層4は発光ダイオード素子2の頂部表面6及び上部表面8のみを覆い、下部表面10を覆わない。
【選択図】図2B
Description
10:下部表面;
100:隙間;
1A:一部蛍光粉層;
12:ベース;
14:光進行経路;
16:接着層;
18:断熱テープ;
2:発光ダイオード素子;
22、24、26:半導体スタック層;
28:電極;
30:アッパー電極;
32:高さ;
4:波長変換層;
41:突出部;
42:幅;
43:トレンチ;
5:導電ユニット;
50:断熱テープ;
52:阻止層;
54、58:基板;
6:頂部表面;
7:側壁;
8:上部表面;
9:境界。
Claims (20)
- 発光ダイオード素子であって、
ベース;
半導体スタック層を含み、前記半導体スタック層は前記ベースの上に位置する発光ユニット;及び
前記発光ユニットを覆い、前記ベースに直接接触しない波長変換層を含む、発光ダイオード素子。 - 前記発光ユニットは側壁を有し、前記側壁は上部表面及び下部表面を有し、前記下部表面は前記上部表面よりも前記ベースに接近し、前記波長変換層は前記上部表面を覆う、請求項1に記載の発光ダイオード素子。
- 前記発光ユニットは光線を発し、前記光線は、前記発光ダイオード素子の頂視図の視角が90°又は-90°に近い時に、青色系に偏る、請求項1に記載の発光ダイオード素子。
- 前記下部表面の高さは5nm以上である、請求項2に記載の発光ダイオード素子。
- 前記波長変換層は突出部を有する、請求項1に記載の発光ダイオード素子。
- 境界を更に含み、
前記境界は前記上部表面及び前記下部表面の間に位置し、
前記波長変換層は前記境界の上に位置する突出部を含む、請求項2に記載の発光ダイオード素子。 - 前記突出部の幅は500μm以下である、請求項5に記載の発光ダイオード素子。
- 前記発光ユニットは前記ベースに電気的に連接される、請求項1に記載の発光ダイオード素子。
- 導電ユニットを更に含み、
前記導電ユニットは前記発光ユニット及び前記ベースの間に形成される、請求項8に記載の発光ダイオード素子。 - 接着層を更に含み、
前記接着層は前記波長変換層の上に位置する、請求項第1に記載の発光ダイオード素子。 - 前記波長変換層は蛍光粉材料を含む、請求項1に記載の発光ダイオード素子。
- 前記波長変換層は、一部の、前記発光ユニットが発した、第一波長を有する光線を、第二波長を有する光線に変換する、請求項1に記載の発光ダイオード素子。
- 前記ベースは導電性ベースである、請求項1に記載の発光ダイオード素子。
- 前記ベースは一時的なベースである、請求項1に記載の発光ダイオード素子。
- 前記発光ユニットは頂部表面を有する、請求項2に記載の発光ダイオード素子。
- 前記発光ユニットは、前記頂部表面の上に位置する第二導電ユニットを有する、請求項15に記載の発光ダイオード素子。
- 発光ダイオード素子であって、
ベース;
前記ベースの上に位置する阻止層;
複数の発光ユニットであって、前記複数の発光ユニットのうちの任意の一つは前記ベースの上に位置する側壁を有し、前記側壁は上部表面及び下部表面を有し、前記下部表面は前記上部表面よりも前記ベースに接近し、前記阻止層は前記複数の発光ユニットを覆う、複数の発光ユニット;
前記複数の発光ユニットの前記上部表面上に位置する波長変換層;及び
前記複数の発光ユニットのうちの任意の2つの間に位置するトレンチを含み、
前記トレンチは、前記波長変換層を貫通し、前記阻止層を露出させる、発光ダイオード素子。 - 接着層を更に含み、
前記接着層は、前記波長変換層の上に位置し、
前記トレンチは、前記接着層及び前記波長変換層を貫通し、前記阻止層を露出させる、請求項17に記載の発光ダイオード素子。 - 前記複数の発光ユニットは光線を発し、前記光線は、前記発光ダイオード素子の頂視図の視角が90°又は-90°に近い時に、青色系に偏る、請求項17に記載の発光ダイオード素子。
- 前記波長変換層は突出部を有する、請求項17に記載の発光ダイオード素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/367,781 US8957429B2 (en) | 2012-02-07 | 2012-02-07 | Light emitting diode with wavelength conversion layer |
US13/367,781 | 2012-02-07 |
Publications (3)
Publication Number | Publication Date |
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JP2013162130A true JP2013162130A (ja) | 2013-08-19 |
JP2013162130A5 JP2013162130A5 (ja) | 2016-03-10 |
JP6145277B2 JP6145277B2 (ja) | 2017-06-07 |
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JP2013020468A Active JP6145277B2 (ja) | 2012-02-07 | 2013-02-05 | 波長変換層を有する発光ダイオード素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8957429B2 (ja) |
JP (1) | JP6145277B2 (ja) |
KR (1) | KR101885316B1 (ja) |
CN (1) | CN103247745B (ja) |
DE (1) | DE102013101153B4 (ja) |
TW (1) | TWI569478B (ja) |
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JP2017168494A (ja) * | 2016-03-14 | 2017-09-21 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2019062218A (ja) * | 2018-12-05 | 2019-04-18 | 日亜化学工業株式会社 | 発光装置の製造方法 |
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Also Published As
Publication number | Publication date |
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US20130200398A1 (en) | 2013-08-08 |
CN103247745A (zh) | 2013-08-14 |
KR20130091273A (ko) | 2013-08-16 |
DE102013101153A1 (de) | 2013-08-08 |
JP6145277B2 (ja) | 2017-06-07 |
DE102013101153B4 (de) | 2022-11-17 |
KR101885316B1 (ko) | 2018-08-03 |
CN103247745B (zh) | 2017-12-05 |
US8957429B2 (en) | 2015-02-17 |
TWI569478B (zh) | 2017-02-01 |
TW201334237A (zh) | 2013-08-16 |
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