JP6680670B2 - トップエミッション型半導体発光デバイス - Google Patents

トップエミッション型半導体発光デバイス Download PDF

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JP6680670B2
JP6680670B2 JP2016507081A JP2016507081A JP6680670B2 JP 6680670 B2 JP6680670 B2 JP 6680670B2 JP 2016507081 A JP2016507081 A JP 2016507081A JP 2016507081 A JP2016507081 A JP 2016507081A JP 6680670 B2 JP6680670 B2 JP 6680670B2
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light emitting
growth substrate
semiconductor light
leds
semiconductor
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JP2016518713A5 (enExample
JP2016518713A (ja
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ジュード モラン，ブレンダン
ジュード モラン，ブレンダン
サンベル，マルク アンドレ デ
サンベル，マルク アンドレ デ
ベイスン，グリゴリー
アントニユス マリア スウェーヘルス，ノルベルテュス
アントニユス マリア スウェーヘルス，ノルベルテュス
メルヴィン バターワース，マーク
メルヴィン バターワース，マーク
ヴァンポーラ，ケネス
マジュイール，クラリス
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Lumileds Holding BV
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Lumileds Holding BV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
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    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
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    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
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    • H10H20/852—Encapsulations
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/80—Constructional details
    • H10H20/85—Packages
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
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    • H10H20/0362—Manufacture or treatment of packages of encapsulations
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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US201361810833P 2013-04-11 2013-04-11
US61/810,833 2013-04-11
US201361900466P 2013-11-06 2013-11-06
US61/900,466 2013-11-06
PCT/IB2014/060310 WO2014167455A2 (en) 2013-04-11 2014-03-31 Top emitting semiconductor light emitting device

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EP (1) EP2984685B1 (enExample)
JP (2) JP6680670B2 (enExample)
KR (1) KR102245056B1 (enExample)
CN (3) CN111628062A (enExample)
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WO (1) WO2014167455A2 (enExample)

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EP2984685B1 (en) 2018-12-19
TW201501366A (zh) 2015-01-01
US9871167B2 (en) 2018-01-16
US20160240735A1 (en) 2016-08-18
JP2016518713A (ja) 2016-06-23
WO2014167455A3 (en) 2015-01-08
JP2019192946A (ja) 2019-10-31
EP2984685A2 (en) 2016-02-17
CN111613708B (zh) 2024-09-20
CN105378950A (zh) 2016-03-02
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JP6933691B2 (ja) 2021-09-08
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