JP6832282B2 - 複数の積み重ねられた発光デバイスを有するデバイス - Google Patents
複数の積み重ねられた発光デバイスを有するデバイス Download PDFInfo
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- JP6832282B2 JP6832282B2 JP2017542914A JP2017542914A JP6832282B2 JP 6832282 B2 JP6832282 B2 JP 6832282B2 JP 2017542914 A JP2017542914 A JP 2017542914A JP 2017542914 A JP2017542914 A JP 2017542914A JP 6832282 B2 JP6832282 B2 JP 6832282B2
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- 239000010410 layer Substances 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000000853 adhesive Substances 0.000 claims description 26
- 230000001070 adhesive effect Effects 0.000 claims description 26
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000000919 ceramic Substances 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 229920001296 polysiloxane Polymers 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- -1 stud bumps Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000009429 electrical wiring Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
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- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
Claims (8)
- 第1のn型領域と第1のp型領域との間に配置された第1の半導体発光層を含む第1の発光構造を有する第1の横型発光素子と、
第2のn型領域と第2のp型領域との間に配置された第2の半導体発光層を含む第2の発光構造を有する第2の横型発光素子と、
前記第1の発光構造と前記第2の発光構造とを隔てる、非III族窒化物材料を有するセパレータと、
前記セパレータを前記第1及び第2の発光構造間に取り付ける接着材と
を有し、
前記第2の半導体発光層は前記第1の半導体発光層の上に配置され、
前記セパレータは、前記第1の半導体発光層からの光の大部分が前記セパレータを透過するように配置され、
前記セパレータは、前記第2の発光構造を前記第1の発光構造から離間させて、前記第1のn型領域に電気的に接続される第1のワイヤボンド及び前記第1のp型領域に電気的に接続される第2のワイヤボンドを保護し、
前記セパレータは波長変換構造である、
デバイス。 - 前記接着材の中に配置された波長変換材料、を更に有する請求項1に記載のデバイス。
- 前記第1のn型領域、前記第1の発光層、及び前記第1のp型領域は、第1の成長基板上に成長されており、且つ
前記第2のn型領域、前記第2の発光層、及び前記第2のp型領域は、第2の成長基板上に成長されている、
請求項1に記載のデバイス。 - 前記第1のn型領域に電気的に接続された第1のコンタクトと、
前記第1のp型領域に電気的に接続された第2のコンタクトと、
を更に有する請求項3に記載のデバイス。 - 前記第1のコンタクトをマウントに接続する前記第1のワイヤボンドと、
前記第2のコンタクトを前記マウントに接続する前記第2のワイヤボンドと、
を更に有する請求項4に記載のデバイス。 - 前記第2のn型領域に電気的に接続された第3のコンタクトと、
前記第2のp型領域に電気的に接続された第4のコンタクトと、
前記第3のコンタクトを前記マウントに接続する第3のワイヤボンドと、
前記第4のコンタクトを前記マウントに接続する第4のワイヤボンドと、
を更に有する請求項5に記載のデバイス。 - 前記接着材は、
前記第1のp型領域を前記セパレータに取り付ける第1の接着層と、
前記第2の成長基板を前記セパレータに取り付ける第2の接着層と
を有する、請求項3に記載のデバイス。 - 前記第1の成長基板はマウントに取り付けられている、請求項7に記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562117497P | 2015-02-18 | 2015-02-18 | |
US62/117,497 | 2015-02-18 | ||
PCT/EP2016/052779 WO2016131686A1 (en) | 2015-02-18 | 2016-02-10 | Device with multiple, stacked light emitting devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018506187A JP2018506187A (ja) | 2018-03-01 |
JP6832282B2 true JP6832282B2 (ja) | 2021-02-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017542914A Active JP6832282B2 (ja) | 2015-02-18 | 2016-02-10 | 複数の積み重ねられた発光デバイスを有するデバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US10121770B2 (ja) |
EP (1) | EP3259779B1 (ja) |
JP (1) | JP6832282B2 (ja) |
KR (1) | KR102504008B1 (ja) |
CN (1) | CN107258014B (ja) |
TW (1) | TWI696260B (ja) |
WO (1) | WO2016131686A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI785930B (zh) * | 2019-01-25 | 2022-12-01 | 晶元光電股份有限公司 | 光電半導體裝置 |
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JP4496596B2 (ja) * | 2000-03-27 | 2010-07-07 | ソニー株式会社 | 発光装置 |
JP2002057272A (ja) * | 2000-08-04 | 2002-02-22 | ▲せき▼品精密工業股▲ふん▼有限公司 | スタックト・ダイ・パッケージ構造 |
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-
2016
- 2016-02-10 EP EP16703781.1A patent/EP3259779B1/en active Active
- 2016-02-10 WO PCT/EP2016/052779 patent/WO2016131686A1/en active Application Filing
- 2016-02-10 KR KR1020177026086A patent/KR102504008B1/ko active IP Right Grant
- 2016-02-10 JP JP2017542914A patent/JP6832282B2/ja active Active
- 2016-02-10 CN CN201680011107.3A patent/CN107258014B/zh active Active
- 2016-02-10 US US15/551,381 patent/US10121770B2/en active Active
- 2016-02-16 TW TW105104497A patent/TWI696260B/zh active
Also Published As
Publication number | Publication date |
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TWI696260B (zh) | 2020-06-11 |
EP3259779A1 (en) | 2017-12-27 |
CN107258014A (zh) | 2017-10-17 |
US10121770B2 (en) | 2018-11-06 |
US20180068988A1 (en) | 2018-03-08 |
KR20170118178A (ko) | 2017-10-24 |
WO2016131686A1 (en) | 2016-08-25 |
EP3259779B1 (en) | 2019-09-18 |
KR102504008B1 (ko) | 2023-02-28 |
TW201705443A (zh) | 2017-02-01 |
CN107258014B (zh) | 2021-04-13 |
JP2018506187A (ja) | 2018-03-01 |
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