JP7089499B2 - 波長変換式半導体発光デバイス - Google Patents
波長変換式半導体発光デバイス Download PDFInfo
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Description
Claims (13)
- 第1の面、反対側に位置する第2の面、及び該第1の面と該第2の面とを接続する側面を有し、第1のピーク波長を持つ光を発するように構成された発光デバイスと、
第1の面、反対側に位置する第2の面、及び該第1の面と該第2の面とを接続する側面を有する過渡電圧抑圧チップであり、当該過渡電圧抑圧チップの前記第2の面が、前記発光デバイスの前記第2の面と平行に揃えられている過渡電圧抑圧チップと、
前記発光デバイスの前記第1の面及び前記側面上、前記過渡電圧抑圧チップの前記第1の面及び前記側面上、及び前記発光デバイスと前記過渡電圧抑圧チップとの間に配置された波長変換層であり、当該波長変換層が、前記発光デバイスを前記過渡電圧抑圧チップに機械的に接続し、当該波長変換層は、前記発光デバイスの前記第2の面及び前記過渡電圧抑圧チップの前記第2の面と揃えられた表面を有し、且つ
前記発光デバイスによって発せられた光を吸収して第2のピーク波長を持つ光を発する波長変換材料と、
接着材料と、
前記接着材料よりも高い熱伝導率を持つ複数の透明粒子と、
の混合物を有する、波長変換層と、
前記発光デバイスの前記第2の面及び前記過渡電圧抑圧チップの前記第2の面と揃えられた前記波長変換層の前記表面上に堆積された反射層と、
前記波長変換層から反対の前記反射層の表面上に形成された誘電体層であり、前記発光デバイスへの及び前記過渡電圧抑圧チップへのアクセスを提供する開口を有する誘電体層と、
前記発光デバイスと前記過渡電圧抑圧チップとの間の導電接続と、
を有する表面実装可能なデバイス。 - 前記波長変換層は、前記発光デバイス及び前記過渡電圧抑圧チップ上に成形されている、請求項1に記載のデバイス。
- 前記波長変換材料は、前記波長変換層の重量のうちの40%以下を有する、請求項1に記載のデバイス。
- 前記透明粒子と前記接着材料とが異なる材料からなる、請求項1に記載のデバイス。
- 前記透明粒子の屈折率と前記接着材料の屈折率とが10%未満だけ異なる、請求項1に記載のデバイス。
- 当該デバイスは更に、前記誘電体層上に配置された導電パッドを有し、該パッドが、前記発光デバイスと前記過渡電圧抑圧チップとの間の前記導電接続を提供する、請求項1に記載のデバイス。
- 前記反射層は、導電性であり、且つ前記発光デバイスと前記過渡電圧抑圧チップとの間の前記導電接続を提供するようにパターニングされている、請求項1に記載のデバイス。
- 前記接着材料は、前記波長変換層の重量のうちの20%以下を有する、請求項1に記載のデバイス。
- 複数の発光デバイスを用意し、各発光デバイスが、第1の面、反対側に位置する第2の面、及び該第1の面と該第2の面とを接続する側面を有し、
前記複数の発光デバイスを、第1の基板上に、前記発光デバイスの前記第2の面が前記第1の基板と接触するように配置し、
前記複数の発光デバイスを覆って、波長変換層を、該波長変換層が前記発光デバイスの前記第1の面及び前記側面と接触するように配設し、該波長変換層は、前記発光デバイスの前記第2の面と揃えられた表面を有し、
前記第1の基板を除去し、
前記複数の発光デバイス及び前記波長変換層を第2の基板上に配置し、
前記発光デバイスの前記第2の面と揃えられた前記波長変換層の前記表面上に反射層を形成し、
前記反射層を形成した後に、前記波長変換層から反対の前記反射層の表面上に誘電体層を形成し、該誘電体層は、前記発光デバイスへのアクセスを提供する開口を有し、
前記波長変換層を切断することによって、前記複数の発光デバイスを分離し、且つ
前記第2の基板を除去する、
ことを有する方法。 - 前記発光デバイスの前記第2の面上に反射層を形成する、ことを更に有する請求項9に記載の方法。
- 前記複数の発光デバイスのうち2つの間で前記第1の基板上に過渡電圧抑圧デバイスを配置する、ことを更に有する請求項9に記載の方法。
- 当該方法は更に、前記発光デバイスの前記第2の面と揃えられた前記波長変換層の前記表面上と、前記発光デバイスの前記第2の面上と、前記過渡電圧抑圧デバイスの表面上とに反射層を形成することを有し、該反射層が、前記複数の発光デバイスのうち1つと前記過渡電圧抑圧デバイスとの間の導電経路を形成する、請求項11に記載の方法。
- 前記複数の発光デバイスのうち1つを前記過渡電圧抑圧デバイスに電気的に接続する金属層を、前記誘電体層上に形成する、ことを更に有する請求項11に記載の方法。
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US (2) | US10680142B2 (ja) |
EP (1) | EP3092665B1 (ja) |
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KR (1) | KR102299238B1 (ja) |
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KR102299238B1 (ko) | 2014-01-08 | 2021-09-07 | 루미리즈 홀딩 비.브이. | 파장 변환 반도체 발광 디바이스 |
JP2017009725A (ja) * | 2015-06-19 | 2017-01-12 | ソニー株式会社 | 表示装置 |
KR102481646B1 (ko) * | 2015-11-12 | 2022-12-29 | 삼성전자주식회사 | 반도체 발광소자 패키지 |
JP6635007B2 (ja) | 2016-11-30 | 2020-01-22 | 日亜化学工業株式会社 | 発光装置の製造方法 |
TWI645585B (zh) * | 2017-03-03 | 2018-12-21 | 光感動股份有限公司 | 光半導體裝置與光半導體裝置的封裝件 |
US11637225B2 (en) * | 2017-12-20 | 2023-04-25 | Lumileds Llc | Converter with glass layers |
US20190198720A1 (en) * | 2017-12-22 | 2019-06-27 | Lumileds Llc | Particle systems and patterning for monolithic led arrays |
CN108336214A (zh) * | 2018-01-31 | 2018-07-27 | 惠州市华星光电技术有限公司 | 一种高导热量子点led |
US11152545B2 (en) * | 2018-08-06 | 2021-10-19 | Lumileds Llc | Inert filler to increase wavelength converting material volume and improve color over angle |
WO2020033327A1 (en) * | 2018-08-06 | 2020-02-13 | Lumileds Llc | Inert filler to increase wavelength converting material volume and improve color over angle |
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TWI656665B (zh) | 2019-04-11 |
US10886440B2 (en) | 2021-01-05 |
KR102299238B1 (ko) | 2021-09-07 |
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TW201539800A (zh) | 2015-10-16 |
US10680142B2 (en) | 2020-06-09 |
EP3092665B1 (en) | 2019-03-27 |
JP2017502524A (ja) | 2017-01-19 |
US20200295235A1 (en) | 2020-09-17 |
EP3092665A1 (en) | 2016-11-16 |
KR20160106146A (ko) | 2016-09-09 |
CN105874618A (zh) | 2016-08-17 |
US20160322540A1 (en) | 2016-11-03 |
WO2015104604A1 (en) | 2015-07-16 |
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