JP2017502524A - 波長変換式半導体発光デバイス - Google Patents
波長変換式半導体発光デバイス Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 82
- 239000004065 semiconductor Substances 0.000 title description 15
- 239000000463 material Substances 0.000 claims abstract description 102
- 239000000853 adhesive Substances 0.000 claims abstract description 30
- 230000001070 adhesive effect Effects 0.000 claims abstract description 30
- 239000012780 transparent material Substances 0.000 claims abstract description 25
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 21
- 229920001296 polysiloxane Polymers 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 230000001052 transient effect Effects 0.000 claims description 5
- 229920001187 thermosetting polymer Polymers 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 239000002245 particle Substances 0.000 description 7
- 238000000465 moulding Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- -1 stud bumps Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L33/50—Wavelength conversion elements
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- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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Abstract
Description
Claims (15)
- 第1のピーク波長を持つ光を発する発光デバイスと、
前記発光デバイスによって発せられた光の経路内に配置され、前記発光デバイスによって発せられた光を吸収して第2のピーク波長を持つ光を発する波長変換層であり、
波長変換材料と、
透明材料と、
接着材料であり、当該波長変換層の重量のうちの15%以下を有する接着材料と、
の混合物を有する波長変換層と、
を有する構造体。 - 前記発光デバイスは、頂面、底面、及び少なくとも1つの側面を持ち、前記波長変換層は、前記発光デバイスの前記頂面と全ての側面とを覆っている、請求項1に記載の構造体。
- 前記波長変換層は、前記発光デバイスを覆って成形されている、請求項1に記載の構造体。
- 当該構造体は更に、過渡電圧を抑圧するためのチップを有し、前記発光デバイスは、前記波長変換層だけで前記チップに機械的に取り付けられている、請求項1に記載の構造体。
- 前記チップを覆って、及び前記チップの側壁と前記発光デバイスの側壁との間の領域に、前記波長変換層が配設されている、請求項4に記載の構造体。
- 前記波長変換材料は、前記波長変換層の重量のうちの40%以下を有する、請求項1に記載の構造体。
- 前記接着材料は、シリコーン、エポキシ、ゾルゲル材料、及びガラスのうちの1つである、請求項1に記載の構造体。
- 前記発光デバイスの側面を覆って配設された前記波長変換層の部分の底面に配設されたリフレクタ、を更に有する請求項1に記載の構造体。
- 前記透明材料と前記接着材料とが異なる材料である、請求項1に記載の構造体。
- 複数の発光デバイスを基板に取り付け、
前記複数の発光デバイスを覆って波長変換層を形成し、該波長変換層は、波長変換材料と、透明材料と、接着材料とを有し、
前記波長変換層を切断することによって、前記複数の発光デバイスを分離し、且つ
前記基板を除去する、
ことを有する方法。 - 前記波長変換層は、0.5W/mK以上の熱伝導率を有する、請求項10に記載の方法。
- 前記切断することの後、前記波長変換層は、実質的に垂直な側壁を有する、請求項10に記載の方法。
- 前記複数の発光デバイスを覆って前記波長変換層を形成することの後に、前記波長変換層の底面上にリフレクタを形成する、ことを更に有する請求項10に記載の方法。
- 前記複数の発光デバイスのうちの2つの間で、前記基板に、過渡電圧を抑圧するためのチップを取り付け、且つ
前記複数の発光デバイスを覆って前記波長変換層を形成することの後に、前記複数の発光デバイスのうちの1つ上のインターコネクトを前記チップのコンタクトに電気的に接続する導電パッドを形成する、
ことを更に有する請求項10に記載の方法。 - 前記複数の発光デバイスを覆って前記波長変換層を形成することは、前記波長変換層を成形することを有し、且つ
前記接着材料は熱硬化性材料である、
請求項10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461924761P | 2014-01-08 | 2014-01-08 | |
US61/924,761 | 2014-01-08 | ||
PCT/IB2014/066945 WO2015104604A1 (en) | 2014-01-08 | 2014-12-16 | Wavelength converted semiconductor light emitting device |
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JP2019186502A Division JP7089499B2 (ja) | 2014-01-08 | 2019-10-10 | 波長変換式半導体発光デバイス |
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JP2017502524A true JP2017502524A (ja) | 2017-01-19 |
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JP2016544677A Pending JP2017502524A (ja) | 2014-01-08 | 2014-12-16 | 波長変換式半導体発光デバイス |
JP2019186502A Active JP7089499B2 (ja) | 2014-01-08 | 2019-10-10 | 波長変換式半導体発光デバイス |
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Country | Link |
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US (2) | US10680142B2 (ja) |
EP (1) | EP3092665B1 (ja) |
JP (2) | JP2017502524A (ja) |
KR (1) | KR102299238B1 (ja) |
CN (1) | CN105874618A (ja) |
TW (1) | TWI656665B (ja) |
WO (1) | WO2015104604A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10497686B2 (en) | 2016-11-30 | 2019-12-03 | Nichia Corporation | Method of manufacturing light-emitting element |
JP2021507304A (ja) * | 2017-12-20 | 2021-02-22 | ルミレッズ リミテッド ライアビリティ カンパニー | ガラス層を有する変換器 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3092665B1 (en) | 2014-01-08 | 2019-03-27 | Lumileds Holding B.V. | Wavelength converted semiconductor light emitting device |
JP2017009725A (ja) * | 2015-06-19 | 2017-01-12 | ソニー株式会社 | 表示装置 |
KR102481646B1 (ko) * | 2015-11-12 | 2022-12-29 | 삼성전자주식회사 | 반도체 발광소자 패키지 |
TWI645585B (zh) * | 2017-03-03 | 2018-12-21 | 光感動股份有限公司 | 光半導體裝置與光半導體裝置的封裝件 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010519757A (ja) * | 2007-02-26 | 2010-06-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | レンズ内にオーバーモールドされた蛍光体及び蛍光体タイルを持つled |
WO2011093454A1 (ja) * | 2010-01-29 | 2011-08-04 | シチズン電子株式会社 | 発光装置の製造方法及び発光装置 |
JP2012253223A (ja) * | 2011-06-03 | 2012-12-20 | Citizen Holdings Co Ltd | 半導体発光素子の製造方法 |
JP2013511836A (ja) * | 2009-11-23 | 2013-04-04 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 波長変換半導体発光ダイオード |
US20130187174A1 (en) * | 2012-01-24 | 2013-07-25 | Michael A. Tischler | Light-emitting dies incorporating wavelength-conversion materials and related methods |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003268201A (ja) | 2002-03-18 | 2003-09-25 | Sumitomo Bakelite Co Ltd | 半導体封止用エポキシ樹脂成形材料及び半導体装置 |
US7352011B2 (en) | 2004-11-15 | 2008-04-01 | Philips Lumileds Lighting Company, Llc | Wide emitting lens for LED useful for backlighting |
US7344902B2 (en) | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
JP4923408B2 (ja) | 2005-01-26 | 2012-04-25 | パナソニック株式会社 | 発光装置の製造方法 |
JP4789673B2 (ja) | 2005-10-27 | 2011-10-12 | 京セラ株式会社 | 発光素子収納用パッケージならびにこれを用いた光源および発光装置 |
US9024349B2 (en) * | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9640737B2 (en) | 2011-01-31 | 2017-05-02 | Cree, Inc. | Horizontal light emitting diodes including phosphor particles |
US9287469B2 (en) * | 2008-05-02 | 2016-03-15 | Cree, Inc. | Encapsulation for phosphor-converted white light emitting diode |
KR20110099512A (ko) * | 2010-03-02 | 2011-09-08 | 삼성엘이디 주식회사 | 발광소자 패키지 및 그 제조방법 |
WO2011108664A1 (ja) | 2010-03-03 | 2011-09-09 | 有限会社Mtec | 光半導体装置 |
US8232117B2 (en) | 2010-04-30 | 2012-07-31 | Koninklijke Philips Electronics N.V. | LED wafer with laminated phosphor layer |
JP4875185B2 (ja) * | 2010-06-07 | 2012-02-15 | 株式会社東芝 | 光半導体装置 |
KR101752441B1 (ko) * | 2010-07-28 | 2017-07-04 | 서울반도체 주식회사 | 발광모듈 및 이를 포함하는 패키지 |
JP5710915B2 (ja) | 2010-09-09 | 2015-04-30 | シチズンホールディングス株式会社 | 半導体発光装置 |
JP5886584B2 (ja) | 2010-11-05 | 2016-03-16 | ローム株式会社 | 半導体発光装置 |
JP5508244B2 (ja) | 2010-11-15 | 2014-05-28 | シチズンホールディングス株式会社 | 半導体発光装置の製造方法 |
JP2012107096A (ja) | 2010-11-16 | 2012-06-07 | Kaneka Corp | 熱伝導性硬化性樹脂組成物及び硬化性樹脂成形体 |
DE102010054280A1 (de) * | 2010-12-13 | 2012-06-14 | Osram Opto Semiconductors Gmbh | Verfahren zum Erzeugen einer Lumineszenzkonversionsstoffschicht, Zusammensetzung hierfür und Bauelement umfassend eine solche Lumineszenzkonversionsstoffschicht |
TWI529348B (zh) * | 2011-03-07 | 2016-04-11 | 皇家飛利浦電子股份有限公司 | 發光模組、燈、燈具及顯示裝置 |
EP3664167B1 (en) * | 2011-03-25 | 2021-07-07 | Samsung Electronics Co., Ltd. | Light emitting diode |
JP5680472B2 (ja) | 2011-04-22 | 2015-03-04 | シチズンホールディングス株式会社 | 半導体発光装置の製造方法 |
JP2013004905A (ja) | 2011-06-21 | 2013-01-07 | Mitsubishi Chemicals Corp | 半導体発光装置用パッケージ及び半導体発光装置 |
KR101871501B1 (ko) * | 2011-07-29 | 2018-06-27 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 조명 시스템 |
US8492746B2 (en) * | 2011-09-12 | 2013-07-23 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (LED) dice having wavelength conversion layers |
JP5551322B2 (ja) | 2011-09-20 | 2014-07-16 | シチズンホールディングス株式会社 | Ledモジュール及びそれを用いたledランプ |
JP5919753B2 (ja) | 2011-11-18 | 2016-05-18 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
WO2013118072A2 (en) * | 2012-02-10 | 2013-08-15 | Koninklijke Philips N.V. | Wavelength converted light emitting device |
EP2816621A4 (en) | 2012-02-15 | 2015-10-21 | Panasonic Ip Man Co Ltd | LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF |
JP5684751B2 (ja) | 2012-03-23 | 2015-03-18 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
CN104205293B (zh) * | 2012-03-30 | 2017-09-12 | 帝人株式会社 | 半导体装置的制造方法 |
JP2013219071A (ja) | 2012-04-04 | 2013-10-24 | Kyocera Corp | 発光素子搭載用部品および発光装置 |
KR101973613B1 (ko) * | 2012-09-13 | 2019-04-29 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 시스템 |
EP3092665B1 (en) | 2014-01-08 | 2019-03-27 | Lumileds Holding B.V. | Wavelength converted semiconductor light emitting device |
JP6354502B2 (ja) * | 2014-09-30 | 2018-07-11 | セイコーエプソン株式会社 | 光源装置およびプロジェクター |
US9954148B2 (en) * | 2014-10-24 | 2018-04-24 | Citizen Electronics Co., Ltd. | Light-emitting apparatus with optical element and method of manufacturing the same |
-
2014
- 2014-12-16 EP EP14830664.0A patent/EP3092665B1/en active Active
- 2014-12-16 JP JP2016544677A patent/JP2017502524A/ja active Pending
- 2014-12-16 KR KR1020167021514A patent/KR102299238B1/ko active IP Right Grant
- 2014-12-16 US US15/104,196 patent/US10680142B2/en active Active
- 2014-12-16 CN CN201480072753.1A patent/CN105874618A/zh active Pending
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-
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-
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- 2019-10-10 JP JP2019186502A patent/JP7089499B2/ja active Active
-
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- 2020-06-03 US US16/891,613 patent/US10886440B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010519757A (ja) * | 2007-02-26 | 2010-06-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | レンズ内にオーバーモールドされた蛍光体及び蛍光体タイルを持つled |
JP2013511836A (ja) * | 2009-11-23 | 2013-04-04 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 波長変換半導体発光ダイオード |
WO2011093454A1 (ja) * | 2010-01-29 | 2011-08-04 | シチズン電子株式会社 | 発光装置の製造方法及び発光装置 |
JP2012253223A (ja) * | 2011-06-03 | 2012-12-20 | Citizen Holdings Co Ltd | 半導体発光素子の製造方法 |
US20130187174A1 (en) * | 2012-01-24 | 2013-07-25 | Michael A. Tischler | Light-emitting dies incorporating wavelength-conversion materials and related methods |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10497686B2 (en) | 2016-11-30 | 2019-12-03 | Nichia Corporation | Method of manufacturing light-emitting element |
US11682662B2 (en) | 2016-11-30 | 2023-06-20 | Nichia Corporation | Method of manufacturing light-emitting element |
JP2021507304A (ja) * | 2017-12-20 | 2021-02-22 | ルミレッズ リミテッド ライアビリティ カンパニー | ガラス層を有する変換器 |
JP7117382B2 (ja) | 2017-12-20 | 2022-08-12 | ルミレッズ リミテッド ライアビリティ カンパニー | ガラス層を有する変換器 |
US11637225B2 (en) | 2017-12-20 | 2023-04-25 | Lumileds Llc | Converter with glass layers |
US11973168B2 (en) | 2017-12-20 | 2024-04-30 | Lumileds Llc | Converter with glass layers |
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EP3092665B1 (en) | 2019-03-27 |
US20160322540A1 (en) | 2016-11-03 |
EP3092665A1 (en) | 2016-11-16 |
JP7089499B2 (ja) | 2022-06-22 |
WO2015104604A1 (en) | 2015-07-16 |
US20200295235A1 (en) | 2020-09-17 |
CN105874618A (zh) | 2016-08-17 |
US10886440B2 (en) | 2021-01-05 |
KR20160106146A (ko) | 2016-09-09 |
US10680142B2 (en) | 2020-06-09 |
TWI656665B (zh) | 2019-04-11 |
KR102299238B1 (ko) | 2021-09-07 |
TW201539800A (zh) | 2015-10-16 |
JP2020005004A (ja) | 2020-01-09 |
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