CN105378950A - 顶发射式半导体发光器件 - Google Patents

顶发射式半导体发光器件 Download PDF

Info

Publication number
CN105378950A
CN105378950A CN201480033532.3A CN201480033532A CN105378950A CN 105378950 A CN105378950 A CN 105378950A CN 201480033532 A CN201480033532 A CN 201480033532A CN 105378950 A CN105378950 A CN 105378950A
Authority
CN
China
Prior art keywords
light emitting
semiconductor light
growth substrate
emitting devices
wavelength converting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480033532.3A
Other languages
English (en)
Chinese (zh)
Inventor
B.J.莫兰
M.A.德桑伯
G.巴辛
N.A.M.斯维格斯
M.M.巴特沃尔思
K.万波拉
C.马泽伊尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds Holding BV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV filed Critical Koninklijke Philips NV
Priority to CN202010280757.6A priority Critical patent/CN111628062A/zh
Priority to CN202010279869.XA priority patent/CN111613708B/zh
Publication of CN105378950A publication Critical patent/CN105378950A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/862—Resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
CN201480033532.3A 2013-04-11 2014-03-31 顶发射式半导体发光器件 Pending CN105378950A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202010280757.6A CN111628062A (zh) 2013-04-11 2014-03-31 顶发射式半导体发光器件
CN202010279869.XA CN111613708B (zh) 2013-04-11 2014-03-31 用于制造顶发射式半导体发光器件的方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361810833P 2013-04-11 2013-04-11
US61/810833 2013-04-11
US201361900466P 2013-11-06 2013-11-06
US61/900466 2013-11-06
PCT/IB2014/060310 WO2014167455A2 (en) 2013-04-11 2014-03-31 Top emitting semiconductor light emitting device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
CN202010280757.6A Division CN111628062A (zh) 2013-04-11 2014-03-31 顶发射式半导体发光器件
CN202010279869.XA Division CN111613708B (zh) 2013-04-11 2014-03-31 用于制造顶发射式半导体发光器件的方法

Publications (1)

Publication Number Publication Date
CN105378950A true CN105378950A (zh) 2016-03-02

Family

ID=51690078

Family Applications (3)

Application Number Title Priority Date Filing Date
CN202010279869.XA Active CN111613708B (zh) 2013-04-11 2014-03-31 用于制造顶发射式半导体发光器件的方法
CN201480033532.3A Pending CN105378950A (zh) 2013-04-11 2014-03-31 顶发射式半导体发光器件
CN202010280757.6A Pending CN111628062A (zh) 2013-04-11 2014-03-31 顶发射式半导体发光器件

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN202010279869.XA Active CN111613708B (zh) 2013-04-11 2014-03-31 用于制造顶发射式半导体发光器件的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202010280757.6A Pending CN111628062A (zh) 2013-04-11 2014-03-31 顶发射式半导体发光器件

Country Status (7)

Country Link
US (1) US9871167B2 (enExample)
EP (1) EP2984685B1 (enExample)
JP (2) JP6680670B2 (enExample)
KR (1) KR102245056B1 (enExample)
CN (3) CN111613708B (enExample)
TW (1) TWI659551B (enExample)
WO (1) WO2014167455A2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110337721A (zh) * 2016-12-27 2019-10-15 艾利迪公司 用于制造包含光刻胶的光致发光垫的光电器件的方法
CN111201619A (zh) * 2017-05-09 2020-05-26 亮锐有限责任公司 具有反射侧壁的发光器件
CN117558851A (zh) * 2024-01-05 2024-02-13 晶能光电股份有限公司 发光装置及其制备方法、发光阵列结构
US20240213401A1 (en) * 2022-12-21 2024-06-27 Creeled, Inc. Textured lumiphore layer to improve light extraction for light-emitting diode chips and related methods
WO2024230501A1 (zh) * 2023-05-05 2024-11-14 北京字跳网络技术有限公司 Micro/Nano LED装置及其制备方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3020076B1 (en) * 2013-07-08 2017-09-06 Koninklijke Philips N.V. Wavelength converted semiconductor light emitting device
CN104716245A (zh) 2013-12-13 2015-06-17 晶元光电股份有限公司 发光装置及其制作方法
DE102014101492A1 (de) * 2014-02-06 2015-08-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
US20160225962A1 (en) * 2015-01-30 2016-08-04 Empire Technology Development Llc Nanoparticle gradient refractive index encapsulants for semi-conductor diodes
US10121770B2 (en) * 2015-02-18 2018-11-06 Koninklijke Philips N.V. Device with multiple, stacked light emitting devices
DE102015107593A1 (de) * 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Leuchtmittel
CN109643745B (zh) * 2015-08-03 2023-07-14 亮锐控股有限公司 具有反射性侧涂层的半导体发光器件
US9753277B2 (en) 2015-08-11 2017-09-05 Delta Electronics, Inc. Wavelength conversion device
JP6327220B2 (ja) * 2015-08-31 2018-05-23 日亜化学工業株式会社 発光装置
WO2017052800A1 (en) * 2015-09-25 2017-03-30 Koninklijke Philips N.V. Surface emitter with light-emitting area equal to the led top surface and its fabrication
TWI587543B (zh) * 2015-12-15 2017-06-11 李乃義 發光二極體封裝結構及其製造方法
WO2017116693A1 (en) 2015-12-29 2017-07-06 Koninklijke Philips N.V. Flip chip led with side reflectors and phosphor
JP6974324B2 (ja) * 2015-12-29 2021-12-01 ルミレッズ ホールディング ベーフェー 側面反射器と蛍光体とを備えるフリップチップｌｅｄ
FR3056014B1 (fr) * 2016-09-15 2020-05-29 Valeo Vision Procede pour creer une isolation optique entre des pixels d'une matrice de sources lumineuses semi-conductrices
JP6699580B2 (ja) 2017-02-09 2020-05-27 日亜化学工業株式会社 発光装置
JP6662322B2 (ja) 2017-02-09 2020-03-11 日亜化学工業株式会社 発光装置
US10546985B2 (en) * 2017-03-28 2020-01-28 Nanosys, Inc. Method for increasing the light output of microLED devices using quantum dots
JP6699634B2 (ja) 2017-07-28 2020-05-27 日亜化学工業株式会社 発光装置の製造方法
US20190198564A1 (en) * 2017-12-20 2019-06-27 Lumileds Llc Monolithic segmented led array architecture with islanded epitaxial growth
US11355548B2 (en) * 2017-12-20 2022-06-07 Lumileds Llc Monolithic segmented LED array architecture
US11335835B2 (en) * 2017-12-20 2022-05-17 Lumileds Llc Converter fill for LED array
US11296262B2 (en) 2017-12-21 2022-04-05 Lumileds Llc Monolithic segmented LED array architecture with reduced area phosphor emission surface
US10879431B2 (en) 2017-12-22 2020-12-29 Lumileds Llc Wavelength converting layer patterning for LED arrays
US11201267B2 (en) * 2018-12-21 2021-12-14 Lumileds Llc Photoresist patterning process supporting two step phosphor-deposition to form an LED matrix array

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1497745A (zh) * 2002-10-16 2004-05-19 ˹̹�׵�����ʽ���� 用于车辆使用的波长转换元件
CN101047220A (zh) * 2006-03-29 2007-10-03 丰田合成株式会社 发光器件
CN101127379A (zh) * 2006-08-16 2008-02-20 苏忠杰 高提取效率发光装置
CN101188268A (zh) * 2006-10-31 2008-05-28 三星电子株式会社 发光二极管芯片和发光二极管光源模块的制造方法
US20100279437A1 (en) * 2009-05-01 2010-11-04 Koninklijke Philips Electronics N.V. Controlling edge emission in package-free led die
US20110198665A1 (en) * 2010-02-16 2011-08-18 Kabushiki Kaisha Toshiba Light emitting element, method for manufacturing same, and light emitting device
CN102439739A (zh) * 2009-05-01 2012-05-02 飞利浦拉米尔德斯照明设备有限责任公司 在无封装led管芯中控制边缘发射

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6229160B1 (en) * 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
US6650044B1 (en) * 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
JP2004514285A (ja) 2000-11-17 2004-05-13 エムコア・コーポレイション 光抽出を改善するためのテーパーづけ側壁を有するレーザ分離ダイ
US6417019B1 (en) * 2001-04-04 2002-07-09 Lumileds Lighting, U.S., Llc Phosphor converted light emitting diode
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
ATE537564T1 (de) * 2004-10-13 2011-12-15 Panasonic Corp Lumineszente lichtquelle, verfahren zu ihrer herstellung und licht emittierende vorrichtung
WO2006043796A1 (en) 2004-10-22 2006-04-27 Seoul Opto-Device Co., Ltd. Gan compound semiconductor light emitting element and method of manufacturing the same
DE102004053116A1 (de) * 2004-11-03 2006-05-04 Tridonic Optoelectronics Gmbh Leuchtdioden-Anordnung mit Farbkonversions-Material
JP2008537002A (ja) * 2005-04-19 2008-09-11 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 赤色光を放射するセラミック・ルミネッセンス・コンバータから成る照明システム
JP4650378B2 (ja) * 2006-08-31 2011-03-16 日亜化学工業株式会社 発光装置の製造方法
US20090275157A1 (en) * 2006-10-02 2009-11-05 Illumitex, Inc. Optical device shaping
JP2010506402A (ja) * 2006-10-02 2010-02-25 イルミテックス， インコーポレイテッド Ｌｅｄのシステムおよび方法
JP4655029B2 (ja) * 2006-11-20 2011-03-23 パナソニック株式会社 発光装置および半導体発光素子の製造方法
JP2008187030A (ja) * 2007-01-30 2008-08-14 Stanley Electric Co Ltd 発光装置
JP2008205229A (ja) * 2007-02-21 2008-09-04 Matsushita Electric Ind Co Ltd 半導体発光素子、半導体発光装置および製造方法
TWI350012B (en) * 2007-05-04 2011-10-01 Lite On Technology Corp White light emitting diode and base thereof
US20090140279A1 (en) * 2007-12-03 2009-06-04 Goldeneye, Inc. Substrate-free light emitting diode chip
KR100944008B1 (ko) * 2007-12-17 2010-02-24 삼성전기주식회사 백색 발광소자 및 그 제조방법
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US7923746B2 (en) * 2008-03-12 2011-04-12 Industrial Technology Research Institute Light emitting diode package structure and method for fabricating the same
WO2010035206A1 (en) * 2008-09-25 2010-04-01 Koninklijke Philips Electronics N.V. Coated light emitting device and method for coating thereof
CN101551068A (zh) * 2009-04-30 2009-10-07 旭丽电子(广州)有限公司 一种发光二极管装置及其封装方法
US8440500B2 (en) * 2009-05-20 2013-05-14 Interlight Optotech Corporation Light emitting device
JP2011066193A (ja) * 2009-09-17 2011-03-31 Rohm Co Ltd 光学装置および光学装置の製造方法
JP2012039013A (ja) * 2010-08-10 2012-02-23 Citizen Electronics Co Ltd 発光装置の製造方法
JP2012079776A (ja) * 2010-09-30 2012-04-19 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
JP2012084622A (ja) * 2010-10-08 2012-04-26 Citizen Holdings Co Ltd 半導体発光素子の製造方法
JP5508244B2 (ja) * 2010-11-15 2014-05-28 シチズンホールディングス株式会社 半導体発光装置の製造方法
JP2012142410A (ja) * 2010-12-28 2012-07-26 Rohm Co Ltd 発光素子ユニットおよびその製造方法、発光素子パッケージならびに照明装置
JP5962102B2 (ja) * 2011-03-24 2016-08-03 日亜化学工業株式会社 発光装置及びその製造方法
JP5840377B2 (ja) 2011-04-14 2016-01-06 日東電工株式会社 反射樹脂シートおよび発光ダイオード装置の製造方法
JP5670249B2 (ja) * 2011-04-14 2015-02-18 日東電工株式会社 発光素子転写シートの製造方法、発光装置の製造方法、発光素子転写シートおよび発光装置
JP5745319B2 (ja) * 2011-04-14 2015-07-08 日東電工株式会社 蛍光反射シート、および、発光ダイオード装置の製造方法
CN103534822A (zh) * 2011-04-20 2014-01-22 株式会社Elm 发光装置及其制造方法
JP5619680B2 (ja) * 2011-06-03 2014-11-05 シチズンホールディングス株式会社 半導体発光素子の製造方法
JP2013016588A (ja) * 2011-07-01 2013-01-24 Citizen Electronics Co Ltd Ｌｅｄ発光装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1497745A (zh) * 2002-10-16 2004-05-19 ˹̹�׵�����ʽ���� 用于车辆使用的波长转换元件
CN101047220A (zh) * 2006-03-29 2007-10-03 丰田合成株式会社 发光器件
CN101127379A (zh) * 2006-08-16 2008-02-20 苏忠杰 高提取效率发光装置
CN101188268A (zh) * 2006-10-31 2008-05-28 三星电子株式会社 发光二极管芯片和发光二极管光源模块的制造方法
US20100279437A1 (en) * 2009-05-01 2010-11-04 Koninklijke Philips Electronics N.V. Controlling edge emission in package-free led die
CN102439739A (zh) * 2009-05-01 2012-05-02 飞利浦拉米尔德斯照明设备有限责任公司 在无封装led管芯中控制边缘发射
US20110198665A1 (en) * 2010-02-16 2011-08-18 Kabushiki Kaisha Toshiba Light emitting element, method for manufacturing same, and light emitting device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110337721A (zh) * 2016-12-27 2019-10-15 艾利迪公司 用于制造包含光刻胶的光致发光垫的光电器件的方法
CN110337721B (zh) * 2016-12-27 2023-05-12 艾利迪公司 用于制造包含光刻胶的光致发光垫的光电器件的方法
CN111201619A (zh) * 2017-05-09 2020-05-26 亮锐有限责任公司 具有反射侧壁的发光器件
CN111201619B (zh) * 2017-05-09 2023-08-18 亮锐有限责任公司 具有反射侧壁的发光器件
US20240213401A1 (en) * 2022-12-21 2024-06-27 Creeled, Inc. Textured lumiphore layer to improve light extraction for light-emitting diode chips and related methods
WO2024230501A1 (zh) * 2023-05-05 2024-11-14 北京字跳网络技术有限公司 Micro/Nano LED装置及其制备方法
CN117558851A (zh) * 2024-01-05 2024-02-13 晶能光电股份有限公司 发光装置及其制备方法、发光阵列结构

Also Published As

Publication number Publication date
JP2019192946A (ja) 2019-10-31
WO2014167455A3 (en) 2015-01-08
CN111613708A (zh) 2020-09-01
WO2014167455A2 (en) 2014-10-16
CN111613708B (zh) 2024-09-20
US9871167B2 (en) 2018-01-16
KR20150142033A (ko) 2015-12-21
EP2984685A2 (en) 2016-02-17
TW201501366A (zh) 2015-01-01
JP6933691B2 (ja) 2021-09-08
KR102245056B1 (ko) 2021-04-27
JP2016518713A (ja) 2016-06-23
CN111628062A (zh) 2020-09-04
TWI659551B (zh) 2019-05-11
EP2984685B1 (en) 2018-12-19
JP6680670B2 (ja) 2020-04-15
US20160240735A1 (en) 2016-08-18

Similar Documents

Publication Publication Date Title
JP6933691B2 (ja) トップエミッション型半導体発光デバイス
JP7136834B2 (ja) 小型光源を有する波長変換発光デバイス
CN105556684B (zh) 分离形成在衬底晶片上的发光设备的方法
JP7361810B2 (ja) 反射層を伴うマウント上の発光デバイス
CN105393373B (zh) 具有光学元件和反射体的发光器件
JP6535598B2 (ja) フィルタ及び保護層を含む発光デバイス
CN104781931A (zh) 波长转换的发光设备
JP6832282B2 (ja) 複数の積み重ねられた発光デバイスを有するデバイス
CN104904010B (zh) 包括滤光器和保护层的发光器件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20180402

Address after: Holland Schiphol

Applicant after: LUMILEDS HOLDING B.V.

Address before: Holland Ian Deho Finn

Applicant before: Koninkl Philips Electronics NV

RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20160302