JP5745319B2 - 蛍光反射シート、および、発光ダイオード装置の製造方法 - Google Patents
蛍光反射シート、および、発光ダイオード装置の製造方法 Download PDFInfo
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- JP5745319B2 JP5745319B2 JP2011089955A JP2011089955A JP5745319B2 JP 5745319 B2 JP5745319 B2 JP 5745319B2 JP 2011089955 A JP2011089955 A JP 2011089955A JP 2011089955 A JP2011089955 A JP 2011089955A JP 5745319 B2 JP5745319 B2 JP 5745319B2
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- emitting diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
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- H01L2924/12042—LASER
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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Description
まず、蛍光反射シートを用意した(図2(a)参照)。
熱剥離シート(商品名「リバアルファ」、日東電工社製)からなる厚み100μmの第2離型基材を用意した(図6(a)参照)。
<蛍光体層の用意>
Y3Al5O12:Ceからなる蛍光体粒子(球形状、平均粒子径95nm)4g、バインダー樹脂としてpoly (vinyl butyl−co−vinyl alcohol co vinyl alcohol)(シグマアルドリッチ社製、重量平均分子量90000〜120000)0.21g、焼結助剤としてシリカ粉末(Cabot Corporation社製、商品名「CAB−O−SIL HS−5」)0.012g、および、メタノール10mLを乳鉢にて混合してスラリーとし、得られたスラリーをドライヤーにてメタノールを除去し、乾燥粉末を得た。
2 ダイオード基板
3 発光ダイオード素子
4 反射樹脂層
5 蛍光体層
9 貫通孔
13蛍光反射シート
21第1離型基材
23第2離型基材
Claims (7)
- 蛍光体層を発光ダイオード素子の厚み方向一方に設け、反射樹脂層を前記発光ダイオード素子の側方に設けるための蛍光反射シートであって、
前記蛍光体層、および、
前記蛍光体層の厚み方向一方面に設けられる前記反射樹脂層
を備え、
前記反射樹脂層は、前記発光ダイオード素子の側面に接触するように、前記発光ダイオード素子に対応して形成されていることを特徴とする、蛍光反射シート。 - 前記反射樹脂層は、前記蛍光体層の前記厚み方向一方面に接触していることを特徴とする、請求項1に記載の蛍光反射シート。
- 前記蛍光体層が、蛍光体を含有する蛍光体組成物のみから形成されていることを特徴とする、請求項1または2に記載の蛍光反射シート。
- 前記蛍光体層の前記厚み方向一方面は、前記反射樹脂層から露出する露出面を有し、
前記蛍光体層は、前記露出面が前記発光ダイオード素子の前記厚み方向一方面に接触するように、構成されていることを特徴とする、請求項1〜3のいずれか一項に記載の蛍光反射シート。 - 反射樹脂層を蛍光体層の厚み方向一方面に設けることにより、請求項1に記載の蛍光反射シートを用意する工程、
発光ダイオード素子を基材の前記厚み方向一方面に設ける工程、
貫通孔を前記基材に前記厚み方向を貫通するように形成する工程、
前記蛍光反射シートを、前記反射樹脂層が前記貫通孔と対向配置するとともに、前記蛍光体層が前記発光ダイオード素子の厚み方向一方面と対向配置するように、前記基材に積層する工程、
前記貫通孔内を減圧する工程、および、
前記反射樹脂層を前記発光ダイオード素子の側面に密着させる工程
を備えることを特徴とする、発光ダイオード装置の製造方法。 - 前記基材が、ダイオード基板であり、
前記発光ダイオード素子を前記基材に設ける工程では、
前記発光ダイオード素子を前記基材にフリップチップ実装する
ことを特徴とする、請求項5に記載の発光ダイオード装置の製造方法。 - 前記基材が、離型基材であり、
前記基材を前記発光ダイオード素子および前記反射樹脂層から引き剥がす工程、および、
前記発光ダイオード素子をダイオード基板にフリップチップ実装する工程
をさらに備えることを特徴とする、請求項5に記載の発光ダイオード装置の製造方法。
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EP12161746.8A EP2511964A3 (en) | 2011-04-14 | 2012-03-28 | Phosphor reflecting sheet, light emitting diode device, and producing method thereof |
TW101112854A TWI535056B (zh) | 2011-04-14 | 2012-04-11 | 螢光反射片材、發光二極體裝置及其製造方法 |
KR1020120037785A KR20120117662A (ko) | 2011-04-14 | 2012-04-12 | 형광 반사 시트, 발광 다이오드 장치 및 그 제조 방법 |
US13/446,540 US9412920B2 (en) | 2011-04-14 | 2012-04-13 | Phosphor reflecting sheet, light emitting diode device, and producing method thereof |
CN2012101110993A CN102738368A (zh) | 2011-04-14 | 2012-04-13 | 荧光反射片、发光二极管装置及其制造方法 |
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US9412920B2 (en) | 2016-08-09 |
US20120261700A1 (en) | 2012-10-18 |
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