TW201501366A - 頂部發射半導體發光裝置 - Google Patents
頂部發射半導體發光裝置 Download PDFInfo
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- TW201501366A TW201501366A TW103113487A TW103113487A TW201501366A TW 201501366 A TW201501366 A TW 201501366A TW 103113487 A TW103113487 A TW 103113487A TW 103113487 A TW103113487 A TW 103113487A TW 201501366 A TW201501366 A TW 201501366A
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Classifications
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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Abstract
本發明之實施例包含一半導體結構,其包含夾於一n型區域與一p型區域之間之一發光層。一生長基板附接至該半導體結構。該生長基板具有至少一傾斜側壁。一反射層安置於該傾斜側壁上。透過該生長基板之一第一表面提取從該半導體結構及該生長基板提取之大多數光。
Description
本發明係關於頂部發射之波長轉換半導體發光裝置。
包含發光二極體(LED)、諧振腔發光二極體(RCLED)、垂直腔雷射二極體(VCSEL)及邊射型雷射之半導體發光裝置係當前可用之最有效率光源。當前,製造能夠跨可見光譜操作之高亮度發光裝置時所關注之材料系統包含III-V族半導體,尤其是鎵、鋁、銦及氮之二元合金、三元合金及四元合金(亦稱作III族氮化物材料)。通常,藉由使用有機金屬化學氣相沈積(MOCVD)、分子束磊晶法(MBE)或其他磊晶技術來於一藍寶石、碳化矽、III族氮化物或其他適合基板上磊晶地生長不同組合物及摻雜物濃度之一半導體層堆疊而製造III族氮化物發光裝置。該堆疊通常包含形成於該基板上之摻雜有(例如)Si之一個或多個n型層、形成於該或該等n型層上之一作用區域中之一個或多個發光層、及形成於該作用區域上之摻雜有(例如)Mg之一個或多個p型層。電接點形成於該n型區域及該p型區域上。
通常,藉由在一生長基板上生長一LED半導體結構,將該半導體結構附接至一基座,接著移除該生長基板來形成僅從通常稱作「頂部」表面之一表面發射光之LED(即,其中實質上減少或消除來自LED之側面之光發射的裝置)。
本發明之一目的係提供一種裝置,其從該裝置之頂面發射大多數光且無需移除生長基板。
本發明之實施例包含一半導體結構,其包含夾於一n型區域與一p型區域之間之一發光層。一生長基板附接至該半導體結構。該生長基板具有至少一傾斜側壁。一反射層安置於該傾斜側壁上。透過該生長基板之一頂面提取從該半導體結構及該生長基板提取之大多數光。
本發明之實施例包含一半導體結構,其包含夾於一n型區域與一p型區域之間之一發光層。具有小於150微米之一厚度的一生長基板附接至該半導體結構。一反射層安置於該生長基板之一側壁及該半導體結構之一側壁上。透過該生長基板之一頂面提取從該半導體結構及該生長基板提取之大多數光。
根據本發明之實施例,一種方法包含:將複數個半導體發光裝置附接至一載體。一反射材料安置於該等半導體發光裝置之間之區域中。使兩個相鄰半導體發光裝置分離。分離包含:切割該反射材料。
10‧‧‧生長基板/生長基板晶圓
12‧‧‧III族氮化物半導體結構/區塊
14‧‧‧互連件/區塊
16‧‧‧n型區域
18‧‧‧發光區域/作用區域
20‧‧‧p型區域
21‧‧‧p型接觸件
22‧‧‧n型接觸件
24‧‧‧介電層
25‧‧‧間隙
26‧‧‧互連件
27‧‧‧間隙
28‧‧‧互連件
30‧‧‧臨時載體
32‧‧‧槽孔
34‧‧‧波長轉換部件/波長轉換元件
36‧‧‧反射材料
38‧‧‧區域
40‧‧‧波長轉換層
42‧‧‧波長轉換層
44‧‧‧遮罩層
46‧‧‧反射塗層
48‧‧‧波長轉換層
圖1繪示一III族氮化物LED之一實例。
圖2繪示附接至一臨時載體之LED之一晶圓。
圖3繪示在生長基板中形成槽孔之後的圖2之結構。
圖4繪示在將波長轉換部件附接至LED之後的圖3之結構。
圖5繪示在用反射材料填充LED之間之區域之後的圖4之結構。
圖6繪示在使LED分離之後的圖5之結構。
圖7繪示附接至一臨時載體之LED。
圖8繪示在將波長轉換部件附接至LED之後的圖7之結構。
圖9繪示在用反射材料填充LED之間之區域之後的圖8之結構。
圖10繪示在用反射材料填充LED之間之區域之後的圖7之結構。
圖11繪示在LED上形成一波長轉換層之後的圖10之結構。
圖12繪示附接至一臨時載體之波長轉換部件。
圖13繪示在將LED附接至波長轉換部件之後的圖12之結構。
圖14繪示在用反射材料填充LED之間之區域之後的圖13之結構。
圖15繪示具有附接至一臨時載體之一實質上等形波長轉換層的LED。
圖16繪示在用反射材料填充LED之間之區域之後的圖15之結構。
圖17繪示具有附接至一臨時載體之形成於LED之頂部上之一遮罩層的LED。
圖18繪示在形成一反射層之後的圖17之結構。
圖19繪示在移除遮罩層之後的圖18之結構。
圖20繪示在結構上形成一波長轉換層之後的圖19之結構。
在本發明之實施例中,將生長於一生長基板上之半導體LED之晶圓處理為其中透過各LED之一頂面提取大多數光之個別裝置或裝置群組。一反射材料安置於裝置之側上以防止光從裝置之側射出或減少從裝置之側提取之光量。該反射材料亦可增加透過LED之頂面提取之光量。
雖然在以下實例中半導體發光裝置係發射藍光或UV光之III族氮化物LED,但可使用除LED(諸如雷射二極體)之外之半導體發光裝置及由其他材料系統(諸如其他III-V族材料、III族磷化物、III族砷化物、II-VI族材料、ZnO或Si基材料)製成之半導體發光裝置。
圖1繪示可在本發明之實施例中使用之一III族氮化物LED。可使用任何適合半導體發光裝置,且本發明之實施例不受限於圖1中所繪示之裝置。藉由在一生長基板10上生長一III族氮化物半導體結構12來形成圖1之裝置,如此項技術中所知。生長基板通常為藍寶石,但可為任何適合基板,諸如(例如)SiC、Si、GaN或一複合基板。可在生
長之前圖案化、粗糙化或紋理化其上生長III族氮化物半導體結構之生長基板之一表面,此可改良來自裝置之光提取。可在生長之前或在生長之後圖案化、粗糙化或紋理化與該生長表面相對之生長基板之一表面(即,在一覆晶組態中提取大多數光所透過之表面),此可改良來自裝置之光提取。
半導體結構包含夾於n型區域與p型區域之間之一發光或作用區域。可首先生長一n型區域16,且n型區域16可包含不同組合物及摻雜物濃度之多個層,該等層包含(例如):準備層(諸如緩衝層或成核層),其等可經n型摻雜或非有意摻雜;及n型或甚至p型裝置層,其等根據發光區域所要之特定光學性質、材料性質或電性質而設計以有效率地發射光。一發光或作用區域18生長於n型區域上。適合發光區域之實例包含一單一厚或薄發光層或一多量子井發光區域,該多量子井發光區域包含由障壁層分離之多個薄或厚發光層。接著,一p型區域20可生長於發光區域上。如同n型區域,p型區域可包含不同組合物、厚度及摻雜物濃度之多個層,其等包含未經有意摻雜之層或n型層。
在生長之後,一p型接觸件形成於p型區域之表面上。p型接觸件21通常包含多個導電層,諸如一反射金屬及一保護金屬,該保護金屬可防止或減少該反射金屬之電遷移。該反射金屬通常為銀,但可使用一或若干任何適合材料。在形成p型接觸件21之後,移除p型接觸件21、p型區域20及作用區域18之一部分以暴露其上形成一n型接觸件22之n型區域16之一部分。由可填充有一介電質(諸如矽氧化物或任何其他適合材料)之一間隙25使n型接觸件22與p型接觸件21彼此電隔離。可形成多個n型接觸通孔,n型接觸件22及p型接觸件21不受限於圖1中所繪示之配置。n型接觸件及p型接觸件可經重新分佈以形成具有一介電質/金屬堆疊之接合墊,如此項技術中所知。
為形成至LED之電連接,一個或多個互連件26及28形成於n型接
觸件22及p型接觸件21上或電連接至n型接觸件22及p型接觸件21。在圖1中,互連件26電連接至n型接觸件22。互連件28電連接至p型接觸件21。由介電層24及間隙27使互連件26及28與n型接觸件22及p型接觸件21電隔離且使互連件26與28彼此電隔離。互連件26及28可為(例如)焊料、柱形凸塊、金層或任何其他適合結構。諸多個別LED形成於一單一晶圓上,接著從裝置之該晶圓切割。在下圖中,由區塊12表示LED之一晶圓之半導體結構及n型接觸件22與p型接觸件21。由區塊14表示LED之一晶圓之互連件26及28。
可在生長半導體結構之後或在形成個別裝置(如上文參考圖1所描述)之後使基板10薄化。在薄化之後,基板在一些實施例中可為至少50微米厚,一些實施例中可為不超過150微米厚,一些實施例中可為至少80微米厚,且一些實施例中可為不超過120微米厚。
圖2、圖3、圖4、圖5及圖6繪示形成根據本發明之實施例之一裝置。
在圖2中,在將LED之晶圓切割為個別LED或LED群組之前,透過互連件14來將晶圓附接至一臨時載體30。臨時載體30使晶圓穩定以進行以下處理步驟。臨時載體30可為任何適合材料,諸如(例如)晶圓處置帶。
在圖3中,槽孔32形成於生長基板10中。在一些實施例中,槽孔32不超過50微米寬(例如,在具有一傾斜側壁之一槽孔之頂部處,如圖3中所繪示)。槽孔安置於LED之間之區域中,其中結構將被切割(如下文所描述)以使晶圓分離為個別LED或LED群組。可藉由包含(例如)濕式或乾式蝕刻、雷射劃線或機械切割(諸如利用一金剛石刀片來鋸切)之任何適合技術來形成槽孔。槽孔32可延伸穿過基板10之整個厚度,但其無需如此。槽孔32可具有傾斜側壁(如圖3中所繪示),但傾斜側壁並非必需。
在圖4中,波長轉換部件34附接至基板10之頂部,使得波長轉換部件與個別LED或LED群組對準。波長轉換部件34係一般波長轉換結構,其等經形成以與LED之晶圓分離,接著附接至基板10。因而,波長轉換部件34係自支撐結構,而非為原位形成於基板10上之結構。適合波長轉換部件34之實例包含:磷光體,其(例如)藉由燒結來形成為陶瓷薄層;及/或一磷光體或其他波長轉換材料,其安置於一透明材料(諸如玻璃、聚矽氧或環氧樹脂)中,該磷光體或其他波長轉換材料經澆鑄或否則形成為一薄片,接著被切割為個別波長轉換部件34。
波長轉換部件34中之波長轉換材料可為(例如)習知磷光體、有機磷光體、量子點、有機半導體、II-VI或III-V族半導體、II-VI或III-V族半導體量子點或奈米晶體、染料、聚合物或其他發光材料。波長轉換材料吸收由LED發射之光且發射一個或多個不同波長之光。由LED發射之未轉換光通常為從結構提取之光之最終光譜之部分,但其無需如此。常見組合之實例包含與一發射黃光波長轉換材料組合之一發射藍光LED、與發射綠光波長轉換材料及發射紅光波長轉換材料組合之一發射藍光LED、與發射藍光波長轉換材料及發射黃光波長轉換材料組合之一發射UV光LED、及與發射藍光波長轉換材料、發射綠光波長轉換材料及發射紅光波長轉換材料組合之一發射UV光LED。可添加發射其他色彩光之波長轉換材料以調節從結構發射之光之光譜。
可藉由(例如)利用一材料(諸如聚矽氧或任何其他適合黏著劑)進行膠合、直接接合或任何其他適合技術來將波長轉換部件34附接至基板10。
在圖5中,一反射材料36安置於圖3中所形成之槽孔32中。反射材料可為(例如)安置於一透明材料中之反射粒子或其他粒子。粒子及透明材料可經選擇以具有實質上不同之折射率以引起光學散射。在一些實施例中,透明材料具有一低折射率(例如,聚矽氧可具有1.4或更
小之一折射率)且粒子具有一較高折射率(例如,TiO2具有2.6之一折射率)。可使用包含(例如)TiO2、ZnO或Al2O3之任何適合反射粒子。適合透明材料之實例包含聚矽氧模製化合物、液體聚矽氧、環氧樹脂及玻璃。在一些實施例中,反射粒子、透明材料及/或反射粒子與透明材料之組合具有比常見聚矽氧材料高之一導熱率。常見聚矽氧材料通常具有約0.1W/mK至0.2W/mK之一導熱率。
可藉由任何適合技術(諸如(例如)施配或模製)來將反射材料36安置於槽孔32中。反射材料36可完全填充槽孔32,如圖5中所繪示,使得在一些實施例中,反射材料36之頂部與波長轉換部件34之頂部共面。在一些實施例中,反射材料36未完全填充槽孔32。在一些實施例中,在將反射材料36安置於槽孔中之後移除過量反射材料36。例如,可藉由任何適合技術(諸如機械磨損、研磨或微珠噴砂)來移除在槽孔32之頂部上延伸或覆蓋LED之反射材料。
在圖6中,藉由切割穿過LED之間之區域38中之反射材料36及LED晶圓來使個別LED與晶圓分離。可藉由包含(例如)金剛石鋸切、雷射切割或劃線及斷開之任何適合技術來從晶圓切割個別LED。因切割而形成之鋸口可(例如)不超過20微米寬。為使反射材料發揮適當作用,保留於切割之後之圖6中之LED之側上之反射材料36之所需厚度可取決於反射材料之類型。在一些實施例中,需要反射金屬膜不超過1微米。對於漫反射體(諸如聚矽氧中之TiO2),反射率可取決於厚度。例如,在一些實施例中,具有至少90%反射率之一漫反射體可為20微米厚或更小,且在一些實施例中,具有至少95%反射率之一漫反射體可為50微米厚或更小。
在切割之後,藉由任何適合技術(諸如(例如)熱釋放、至一不同載體之轉移或直接拾取)來從臨時載體30移除最終LED。
圖2至圖6中所繪示之方法及所得裝置之一缺點係:可用於波長
轉換部件34及反射材料36之面積受限於生長基板晶圓10上之LED之原始節距。相鄰LED之間之面積(例如)因成本原因而受限,此限制波長轉換部件34之尺寸及反射材料36之厚度。圖7、圖8及圖9繪示一替代實施例,其中首先使個別LED與一晶圓分離,接著在一臨時載體上重新配置具有更大節距之個別LED。
在圖7中,個別LED放置於一載體30上,載體30可為諸如上文參考圖2所描述之臨時載體之一臨時載體。LED在一些實施例中可間隔至少100微米,在一些實施例中可間隔不超過800微米,在一些實施例中可間隔至少400微米,且在一些實施例中可間隔不超過600微米。各LED上之生長基板10可具有實質上垂直之側壁,而非具有圖2至圖6中所描述之實施例中所繪示之傾斜側壁,但垂直側壁並非必需且側壁之形狀可取決於用於使LED分離之技術。
在圖8中,波長轉換元件34附接至各LED之生長基板10,如上文參考圖4所描述。
在圖9中,反射材料36安置於LED之間之間隙中,如上文參考圖5所描述。可藉由切割反射材料來使個別裝置分離,如上文參考圖6所描述,接著從臨時載體移除個別裝置,如上文參考圖6所描述。
圖10及圖11繪示一替代實施例,其中首先使個別LED與一生長晶圓分離,接著將個別LED安置於一臨時載體上。在圖10中,個別LED放置於一載體30上(如圖7中所繪示),載體30可為諸如上文參考圖2所描述之臨時載體之一臨時載體。反射材料36安置於LED之間之區域中,如上文參考圖5所描述。
在圖11中,一波長轉換層40形成於LED及反射材料36上。波長轉換層40可為(例如)安置於一透明材料(諸如聚矽氧)中之一磷光體。可藉由包含(例如)層壓、模製、施配、噴塗或旋塗之任何適合技術來形成波長轉換層40。接著,藉由切割穿過(例如)相鄰LED之間之區域38
中之結構來使LED分離,如上文參考圖6所描述。接著,從臨時載體30移除LED,如上文參考圖6所描述。
圖12、圖13及圖14繪示一替代實施例。在圖12中,個別波長轉換元件34放置於一載體30上,載體30可為諸如上文參考圖2所描述之臨時載體之一臨時載體。上文參考圖4而描述波長轉換元件34。
在圖13中,LED附接至波長轉換元件34。可使用上文參考圖4所描述之方法及材料來附接LED。
在圖14中,一反射材料36安置於LED之間之區域中,如上文參考圖5所描述。接著,藉由切割穿過(例如)相鄰LED之間之區域38中之結構來使LED分離,如上文參考圖6所描述。接著,從臨時載體30移除LED,如上文參考圖6所描述。
圖15及圖16繪示一替代實施例。在圖15中,LED附接至一臨時載體30,臨時載體30可為諸如上文參考圖2所描述之臨時載體之一臨時載體。在將LED附接至臨時載體30之前或在將LED附接至臨時載體30之後,在一些實施例中用一波長轉換層42覆蓋LED之頂部且在一些實施例中用一波長轉換層42覆蓋LED之頂部及側面。波長轉換層42可為(例如)與一透明材料混合之一波長轉換材料,且可藉由包含(例如)層壓、模製或電泳沈積之任何適合技術來形成波長轉換層42。
在圖16中,反射材料36安置於LED之間之區域中,如上文參考圖5所描述。可藉由將損害限制於實質上等形之波長轉換層42的一技術來形成反射材料36。一適合技術之一實例係:在LED之間之區域中施配與液體聚矽氧混合之反射粒子,接著使液體聚矽氧固化。接著,藉由切割穿過(例如)相鄰LED之間之區域38中之結構來使LED分離,如上文參考圖6所描述。接著,從臨時載體30移除LED,如上文參考圖6所描述。
圖17、圖18、圖19及圖20繪示一替代實施例。在圖17中,LED附
接至一臨時載體30,臨時載體30可為諸如上文參考圖2所描述之臨時載體之一臨時載體。在將LED附接至臨時載體之前或在將LED附接至臨時載體之後,用一遮罩層44覆蓋LED之頂部。在一些實施例中,在藉由切割生長基板來分割LED之前,將遮罩層施加至LED之一晶圓之生長基板。遮罩層44可為(例如)光阻劑、介電材料或任何其他適合材料。可藉由包含(例如)旋塗、滾塗、浸塗、層壓、旋塗、蒸鍍、濺鍍及一零件(諸如一塊玻璃)之直接取放之任何適合技術來形成遮罩層44。在一些實施例中,(例如)藉由光微影、陰影遮罩及/或濕式或乾式化學蝕刻來圖案化遮罩層44。
在圖18中,一反射塗層46安置於圖17中所繪示之結構上。反射塗層46可為包含(例如)二向色鏡、分佈式布拉格反射體(DBR)、金屬膜或其他適合介電堆疊之任何適合材料。可藉由包含(例如)物理氣相沈積、CVD、濺鍍、蒸鍍及旋塗之任何適合技術來形成反射塗層46。反射塗層46可實質上等形地塗覆結構,如圖18中所繪示,但此並非必需。
在圖19中,藉由任何適合程序(諸如(例如)一剝離程序)來移除LED之頂部上之遮罩層44及反射塗層46。在移除遮罩層44之後,反射塗層46保留於LED之側壁及LED之間之區域上。
在圖20中,一波長轉換層48形成於圖19中所繪示之結構上。波長轉換層48可為(例如)與一透明材料混合之一波長轉換材料,且可藉由包含(例如)層壓、模製、噴塗或旋塗之任何適合技術來形成波長轉換層48。波長轉換層48可填充LED之間之區域,如圖20中所繪示,或波長轉換層48可為一實質上等形層。接著,藉由切割穿過(例如)相鄰LED之間之區域38中之結構來使LED分離,如上文參考圖6所描述。接著,從臨時載體30移除LED,如上文參考圖6所描述。
在一些實施例中,一透鏡或其他光學元件形成於最終LED上,該
最終LED可為上文所描述之裝置之任何者。在上文所描述之裝置之任何者中,在一些實施例中,生長基板之側壁可傾斜。
雖然已詳細描述本發明,但熟悉此項技術者應瞭解,就本發明而言,可在不脫離本文所描述之發明概念之精神之情況下對本發明進行修改。因此,非意欲本發明之範疇受限於所繪示及所描述之特定實施例。
10‧‧‧生長基板/生長基板晶圓
12‧‧‧III族氮化物半導體結構/區塊
14‧‧‧互連件/區塊
30‧‧‧臨時載體
34‧‧‧波長轉換部件/波長轉換元件
36‧‧‧反射材料
38‧‧‧區域
Claims (14)
- 一種裝置,其包括:一半導體結構,其包括夾於一n型區域與一p型區域之間之一發光層;一生長基板,其附接至該半導體結構,該生長基板具有至少一傾斜側壁;及一反射層,其安置於該傾斜側壁上;其中該反射層經配置使得從該半導體結構及該生長基板提取之大多數光透過該生長基板之一第一表面提取。
- 如請求項1之裝置,其進一步包括安置於該生長基板之該第一表面上之一波長轉換層。
- 如請求項1之裝置,其中該生長基板具有小於150微米之一厚度。
- 一種裝置,其包括:一半導體結構,其包括夾於一n型區域與一p型區域之間之一發光層;一生長基板,其附接至該半導體結構,該生長基板具有小於150微米之一厚度;及一反射層,其安置於該生長基板之一側壁及該半導體結構之一側壁上;其中該反射層經配置使得從該半導體結構及該生長基板提取之大多數光透過該生長基板之一第一表面提取。
- 如請求項4之裝置,其進一步包括安置於該生長基板之該第一表面上之一波長轉換層。
- 如請求項5之裝置,其中該波長轉換層經形成以與該半導體結構 分離且附接至該生長基板。
- 如請求項6之裝置,其中該反射層安置於該波長轉換層之一側壁上。
- 一種方法,其包括:將複數個半導體發光裝置附接至一載體;將一反射材料安置於該等半導體發光裝置之間之區域中;使兩個相鄰半導體發光裝置分離,其中分離包括切割該反射材料;及在使兩個相鄰半導體發光裝置分離之後移除該載體。
- 如請求項8之方法,其中將複數個半導體發光裝置附接至一載體包括將其上形成複數個半導體發光裝置之一生長基板晶圓附接至一載體,該方法進一步包括在該等半導體發光裝置之間之區域中形成該生長基板晶圓中之槽孔,其中將一反射材料安置於該等半導體發光裝置之間之區域中包括將一反射材料安置於該等槽孔中。
- 如請求項8之方法,其進一步包括:在將一反射材料安置於該等半導體發光裝置之間之區域中之前將一波長轉換部件附接至該複數個半導體發光裝置之各者,其中該波長轉換部件經形成以與該半導體發光裝置分離。
- 如請求項8之方法,其進一步包括:在將一反射材料安置於該等半導體發光裝置之間之區域中之後在該複數個半導體發光裝置上形成一波長轉換層。
- 如請求項8之方法,其中將複數個半導體發光裝置附接至一載體包括:將複數個波長轉換部件附接至一載體;及將一半導體發光裝置附接至該等波長轉換部件之各者。
- 如請求項8之方法,其進一步包括:在將該複數個半導體發光裝 置附接至一載體之前將一波長轉換層安置於該複數個半導體發光裝置之各者上。
- 如請求項8之方法,其中將一反射材料安置於該等半導體發光裝置之間之區域中包括:在該等半導體發光裝置之第一表面上形成一遮罩層;在該遮罩層及該複數個半導體發光裝置之側壁上形成一反射層;及移除該遮罩層;該方法進一步包括:在移除該遮罩層之後在該等半導體發光裝置之該等第一表面上形成一波長轉換層。
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US20160240735A1 (en) | 2016-08-18 |
KR20150142033A (ko) | 2015-12-21 |
CN111628062A (zh) | 2020-09-04 |
US9871167B2 (en) | 2018-01-16 |
JP6933691B2 (ja) | 2021-09-08 |
JP2019192946A (ja) | 2019-10-31 |
TWI659551B (zh) | 2019-05-11 |
WO2014167455A2 (en) | 2014-10-16 |
EP2984685A2 (en) | 2016-02-17 |
CN111613708A (zh) | 2020-09-01 |
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