TW201501366A - Top emitting semiconductor light emitting device - Google Patents

Abstract

Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.

Description

Top emitting semiconductor light emitting device

The present invention relates to a top-emitting wavelength-converting semiconductor light-emitting device.

Semiconductor light-emitting devices including light-emitting diodes (LEDs), resonant cavity light-emitting diodes (RCLEDs), vertical-cavity laser diodes (VCSELs), and edge-emitting lasers are currently the most efficient light sources available. At present, the material systems of interest in the manufacture of high-intensity illumination devices capable of operating across the visible spectrum include III-V semiconductors, especially binary alloys of gallium, aluminum, indium and nitrogen, ternary alloys and quaternary alloys (also known as As a group III nitride material). Typically, epitaxial growth on a sapphire, tantalum carbide, group III nitride or other suitable substrate is achieved by using organometallic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) or other epitaxial techniques. A group III nitride light-emitting device is fabricated by stacking a semiconductor layer of one of a composition and a dopant concentration. The stack typically includes one or more n-type layers doped with, for example, Si, formed on the substrate, one or more light-emitting layers formed in one of the active regions of the or the n-type layers, and One or more p-type layers doped with, for example, Mg are formed on the active region. An electrical contact is formed on the n-type region and the p-type region.

Typically, an LED semiconductor structure is grown on a growth substrate, the semiconductor structure is attached to a susceptor, and then the growth substrate is removed to form an LED that emits light only from a surface commonly referred to as a "top" surface. (ie, a device in which light emission from the side of the LED is substantially reduced or eliminated).

It is an object of the present invention to provide a device that emits most of the light from the top surface of the device without the need to remove the growth substrate.

Embodiments of the invention include a semiconductor structure comprising a light-emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one sloped sidewall. A reflective layer is disposed on the inclined sidewall. Most of the light extracted from the semiconductor structure and the growth substrate is extracted through the top surface of one of the growth substrates.

Embodiments of the invention include a semiconductor structure comprising a light-emitting layer sandwiched between an n-type region and a p-type region. A growth substrate having a thickness of less than 150 microns is attached to the semiconductor structure. A reflective layer is disposed on a sidewall of the growth substrate and a sidewall of the semiconductor structure. Most of the light extracted from the semiconductor structure and the growth substrate is extracted through the top surface of one of the growth substrates.

In accordance with an embodiment of the present invention, a method includes attaching a plurality of semiconductor light emitting devices to a carrier. A reflective material is disposed in the region between the semiconductor light emitting devices. Separating two adjacent semiconductor light emitting devices. Separation includes: cutting the reflective material.

10‧‧‧Growth substrate/growth substrate wafer

12‧‧‧Group III nitride semiconductor structure/block

14‧‧‧Interconnects/blocks

16‧‧‧n type area

18‧‧‧Lighting area/action area

20‧‧‧p-type area

21‧‧‧p-type contacts

22‧‧‧n type contacts

24‧‧‧ dielectric layer

25‧‧‧ gap

26‧‧‧Interconnections

27‧‧‧ gap

28‧‧‧Interconnections

30‧‧‧ temporary carrier

32‧‧‧Slots

34‧‧‧wavelength conversion component/wavelength conversion component

36‧‧‧Reflective materials

38‧‧‧Area

40‧‧‧wavelength conversion layer

42‧‧‧wavelength conversion layer

44‧‧‧ mask layer

46‧‧‧Reflective coating

48‧‧‧wavelength conversion layer

FIG. 1 illustrates an example of a III-nitride LED.

2 illustrates a wafer of one of the LEDs attached to a temporary carrier.

FIG. 3 illustrates the structure of FIG. 2 after forming a slot in the growth substrate.

Figure 4 illustrates the structure of Figure 3 after attaching the wavelength converting component to the LED.

Figure 5 illustrates the structure of Figure 4 after filling the area between the LEDs with a reflective material.

Figure 6 illustrates the structure of Figure 5 after the LEDs have been separated.

Figure 7 illustrates an LED attached to a temporary carrier.

Figure 8 illustrates the structure of Figure 7 after attaching the wavelength converting component to the LED.

Figure 9 illustrates the structure of Figure 8 after filling the area between the LEDs with a reflective material.

Figure 10 illustrates the structure of Figure 7 after filling the area between the LEDs with a reflective material.

Figure 11 illustrates the structure of Figure 10 after forming a wavelength converting layer on the LED.

Figure 12 illustrates a wavelength conversion component attached to a temporary carrier.

Figure 13 depicts the structure of Figure 12 after attaching the LED to the wavelength conversion component.

Figure 14 illustrates the structure of Figure 13 after filling the area between the LEDs with a reflective material.

Figure 15 illustrates an LED having a substantially isomorphic wavelength conversion layer attached to a temporary carrier.

Figure 16 illustrates the structure of Figure 15 after filling the area between the LEDs with a reflective material.

Figure 17 illustrates an LED having a mask layer formed on top of an LED attached to a temporary carrier.

Figure 18 illustrates the structure of Figure 17 after forming a reflective layer.

Figure 19 illustrates the structure of Figure 18 after removal of the mask layer.

Figure 20 illustrates the structure of Figure 19 after a wavelength conversion layer has been formed structurally.

In an embodiment of the invention, a wafer of semiconductor LEDs grown on a growth substrate is processed into individual devices or groups of devices in which most of the light is extracted through the top surface of each of the LEDs. A reflective material is disposed on the side of the device to prevent light from exiting the side of the device or to reduce the amount of light extracted from the side of the device. The reflective material also increases the amount of light that is extracted through the top surface of the LED.

Although the semiconductor light emitting device emits a group III nitride LED of blue or UV light in the following examples, semiconductor light emitting devices other than LEDs (such as laser diodes) and other material systems (such as other III-) may be used. A semiconductor light-emitting device made of a Group V material, a Group III phosphide, a Group III arsenide, a Group II-VI material, a ZnO or Si-based material.

1 illustrates a Group III nitride LED that can be used in embodiments of the present invention. Any suitable semiconductor light emitting device can be used, and embodiments of the invention are not limited to the device illustrated in FIG. The apparatus of Figure 1 is formed by growing a III-nitride semiconductor structure 12 on a growth substrate 10, as is known in the art. The growth substrate is typically sapphire, but can be any suitable substrate such as, for example, SiC, Si, GaN or a composite substrate. Can be born The surface of one of the growth substrates on which the Group III nitride semiconductor structure is grown is patterned, roughened or textured before lengthening, which improves light extraction from the device. The surface of one of the growth substrates opposite to the growth surface may be patterned, roughened or textured before growth or after growth (ie, the surface through which most of the light is transmitted in a flip-chip configuration), which may be improved Light extraction from the device.

The semiconductor structure includes a light-emitting or active region sandwiched between the n-type region and the p-type region. An n-type region 16 may be grown first, and the n-type region 16 may comprise a plurality of layers of different compositions and dopant concentrations, including, for example, a preparation layer (such as a buffer layer or a nucleation layer). The n-type or unintentional doping may be performed; and the n-type or even p-type device layer, etc., is designed to efficiently emit light depending on the specific optical, material or electrical properties desired for the luminescent region. A luminescent or active region 18 is grown on the n-type region. Examples of suitable illuminating regions include a single thick or thin luminescent layer or a multi-quantum well illuminating region comprising a plurality of thin or thick luminescent layers separated by a barrier layer. Next, a p-type region 20 can be grown on the light-emitting region. Like an n-type region, the p-type region can comprise multiple layers of different compositions, thicknesses, and dopant concentrations, such as layers that are not intentionally doped or n-type layers.

After growth, a p-type contact is formed on the surface of the p-type region. The p-type contact 21 typically comprises a plurality of conductive layers, such as a reflective metal and a protective metal that prevents or reduces electromigration of the reflective metal. The reflective metal is typically silver, but one or several suitable materials can be used. After the p-type contact 21 is formed, a portion of the p-type contact 21, the p-type region 20, and the active region 18 is removed to expose a portion of the n-type region 16 on which an n-type contact 22 is formed. The n-type contact 22 and the p-type contact 21 are electrically isolated from each other by a gap 25 that can be filled with a dielectric such as tantalum oxide or any other suitable material. A plurality of n-type contact vias may be formed, and the n-type contact 22 and the p-type contact 21 are not limited to the configuration illustrated in FIG. The n-type contacts and the p-type contacts can be redistributed to form a bond pad having a dielectric/metal stack, as is known in the art.

To form an electrical connection to the LED, one or more interconnects 26 and 28 are formed in the n-type connection The contacts 22 and the p-type contacts 21 are electrically connected to the n-type contact 22 and the p-type contact 21. In FIG. 1, interconnect 26 is electrically coupled to n-contact 22. The interconnect 28 is electrically connected to the p-type contact 21. The interconnects 26 and 28 are electrically isolated from the n-type contact 22 and the p-type contact 21 by the dielectric layer 24 and the gap 27 and electrically isolate the interconnects 26 and 28 from each other. Interconnects 26 and 28 can be, for example, solder, stud bumps, gold layers, or any other suitable structure. A plurality of individual LEDs are formed on a single wafer and then cut from the wafer of the device. In the following figure, the semiconductor structure of one of the LEDs and the n-type contact 22 and the p-type contact 21 are indicated by block 12. Interconnects 26 and 28 of one of the LEDs are represented by block 14.

Substrate 10 may be thinned after growth of the semiconductor structure or after formation of an individual device (as described above with reference to Figure 1). After thinning, the substrate may be at least 50 microns thick in some embodiments, no more than 150 microns thick in some embodiments, at least 80 microns thick in some embodiments, and may not exceed some in some embodiments. 120 microns thick.

2, 3, 4, 5 and 6 illustrate an apparatus for forming an embodiment in accordance with the present invention.

In FIG. 2, the wafer is attached to a temporary carrier 30 through interconnect 14 prior to cutting the wafer of LEDs into individual LEDs or groups of LEDs. The temporary carrier 30 stabilizes the wafer for the following processing steps. The temporary carrier 30 can be any suitable material such as, for example, a wafer disposal belt.

In FIG. 3, a slot 32 is formed in the growth substrate 10. In some embodiments, the slot 32 is no more than 50 microns wide (e.g., at the top of one of the slots with one of the sloping sidewalls, as depicted in Figure 3). Slots are placed in the area between the LEDs where the structure will be cut (as described below) to separate the wafer into individual LEDs or groups of LEDs. The slots can be formed by any suitable technique including, for example, wet or dry etching, laser scribing, or mechanical cutting, such as sawing with a diamond blade. The slot 32 can extend through the entire thickness of the substrate 10, but it need not be. Slot 32 may have sloping sidewalls (as depicted in Figure 3), but sloping sidewalls are not required.

In Figure 4, a wavelength conversion component 34 is attached to the top of the substrate 10 such that the wavelength conversion component is aligned with individual LEDs or groups of LEDs. The wavelength converting component 34 is a general wavelength converting structure that is formed to be separated from the wafer of the LED and then attached to the substrate 10. Thus, the wavelength converting member 34 is a self-supporting structure rather than a structure formed on the substrate 10 in situ. Examples of suitable wavelength converting members 34 include: phosphors formed, for example, by sintering to form a thin layer of ceramic; and/or a phosphor or other wavelength converting material disposed in a transparent material (such as glass, polyfluorene) In oxygen or epoxy resin, the phosphor or other wavelength converting material is cast or otherwise formed into a sheet which is then cut into individual wavelength converting members 34.

The wavelength converting material in the wavelength converting member 34 can be, for example, a conventional phosphor, an organic phosphor, a quantum dot, an organic semiconductor, a II-VI or III-V semiconductor, a II-VI or a III-V semiconductor quantum dot. Or nanocrystals, dyes, polymers or other luminescent materials. The wavelength converting material absorbs light emitted by the LED and emits one or more different wavelengths of light. The unconverted light emitted by the LED is typically part of the final spectrum of light extracted from the structure, but it need not be. Examples of common combinations include emitting blue LEDs in combination with one of the emitted yellow light wavelength converting materials, emitting blue LEDs in combination with emitting green light wavelength converting materials and emitting red light converting materials, emitting blue wavelength converting materials, and emitting yellow One of the light wavelength conversion material combinations emits a UV light LED, and emits a UV light LED in combination with one of a blue light wavelength conversion material, a green light wavelength conversion material, and a red light wavelength conversion material. A wavelength converting material that emits other color light may be added to adjust the spectrum of light emitted from the structure.

The wavelength converting component 34 can be attached to the substrate 10 by, for example, gluing, direct bonding, or any other suitable technique using a material such as polyoxyn oxide or any other suitable adhesive.

In Figure 5, a reflective material 36 is disposed in the slot 32 formed in Figure 3. The reflective material can be, for example, reflective particles or other particles disposed in a transparent material. The particles and transparent material can be selected to have substantially different refractive indices to cause optical scattering. In some embodiments, the transparent material has a low refractive index (eg, polyfluorene oxide can have a refractive index of 1.4 or less) and the particles have a higher refractive index (eg, TiO ₂ has a refractive index of 2.6) . Any suitable reflective particle comprising, for example, TiO ₂ , ZnO or Al ₂ O ₃ can be used. Examples of suitable transparent materials include polyoxymethylene molding compounds, liquid polyoxyxides, epoxy resins, and glass. In some embodiments, the combination of reflective particles, transparent material, and/or reflective particles and transparent material has a higher thermal conductivity than conventional polyoxynoxy materials. Common polyoxyn materials typically have a thermal conductivity of from about 0.1 W/mK to 0.2 W/mK.

The reflective material 36 can be disposed in the slot 32 by any suitable technique, such as, for example, dispensing or molding. The reflective material 36 can completely fill the slots 32, as depicted in FIG. 5, such that in some embodiments, the top of the reflective material 36 is coplanar with the top of the wavelength converting component 34. In some embodiments, the reflective material 36 does not completely fill the slots 32. In some embodiments, the excess reflective material 36 is removed after the reflective material 36 is placed in the slot. For example, the reflective material that extends over or overlies the LEDs 32 can be removed by any suitable technique, such as mechanical abrasion, grinding, or bead blasting.

In Figure 6, individual LEDs are separated from the wafer by cutting through reflective material 36 and LED wafers in region 38 between the LEDs. Individual LEDs can be cut from the wafer by any suitable technique including, for example, diamond sawing, laser cutting, or scribing and breaking. The kerf formed by the cut can be, for example, no more than 20 microns wide. In order for the reflective material to function properly, the desired thickness of the reflective material 36 remaining on the side of the LED in Figure 6 after dicing may depend on the type of reflective material. In some embodiments, the reflective metal film is required to be no more than 1 micron. For diffuse reflectors (such as TiO ₂ in polyfluorene oxide), the reflectivity can depend on the thickness. For example, in some embodiments, one of the diffuse reflectors having at least 90% reflectivity can be 20 microns thick or less, and in some embodiments, one of the diffuse reflectors having a reflectivity of at least 95% can be 50 microns. Thick or smaller.

After dicing, the final LED is removed from the temporary carrier 30 by any suitable technique, such as, for example, heat release, transfer to a different carrier, or direct picking.

One of the disadvantages of the method and the resulting device shown in Figures 2 to 6 is that it can be used for wavelengths. The area of the conversion component 34 and the reflective material 36 is limited by the original pitch of the LEDs on the growth substrate wafer 10. The area between adjacent LEDs, for example, is limited by cost, which limits the size of the wavelength converting component 34 and the thickness of the reflective material 36. 7, 8, and 9 illustrate an alternate embodiment in which individual LEDs are first separated from a wafer, and then individual LEDs having a larger pitch are reconfigured on a temporary carrier.

In Figure 7, individual LEDs are placed on a carrier 30, which may be a temporary carrier such as one of the temporary carriers described above with reference to Figure 2. The LEDs may be spaced at least 100 microns apart in some embodiments, may not exceed 800 microns in some embodiments, may be spaced at least 400 microns in some embodiments, and may not exceed 600 microns in some embodiments. The growth substrate 10 on each LED may have substantially vertical sidewalls instead of the sloped sidewalls depicted in the embodiments depicted in Figures 2 through 6, but the vertical sidewalls are not required and the shape of the sidewalls may depend on The technology for separating LEDs.

In Figure 8, a wavelength converting element 34 is attached to the growth substrate 10 of each LED, as described above with reference to Figure 4.

In Figure 9, a reflective material 36 is disposed in the gap between the LEDs as described above with reference to Figure 5. The individual devices can be separated by cutting the reflective material, as described above with reference to Figure 6, and then the individual devices are removed from the temporary carrier, as described above with reference to Figure 6.

10 and 11 illustrate an alternate embodiment in which individual LEDs are first separated from a growth wafer, and then the individual LEDs are placed on a temporary carrier. In Figure 10, individual LEDs are placed on a carrier 30 (as depicted in Figure 7), which may be a temporary carrier such as the temporary carrier described above with reference to Figure 2. Reflective material 36 is disposed in the region between the LEDs as described above with reference to FIG.

In FIG. 11, a wavelength conversion layer 40 is formed on the LED and reflective material 36. The wavelength converting layer 40 can be, for example, one of phosphors disposed in a transparent material such as polyfluorene. The wavelength conversion layer 40 can be formed by any suitable technique including, for example, lamination, molding, dispensing, spraying, or spin coating. Next, by cutting through, for example, the area between adjacent LEDs 38 The structure is used to separate the LEDs as described above with reference to FIG. Next, the LEDs are removed from the temporary carrier 30 as described above with reference to FIG.

12, 13 and 14 illustrate an alternate embodiment. In Figure 12, individual wavelength converting elements 34 are placed on a carrier 30, which may be a temporary carrier such as one of the temporary carriers described above with reference to Figure 2. The wavelength conversion element 34 is described above with reference to FIG.

In FIG. 13, the LEDs are attached to a wavelength conversion element 34. The LEDs can be attached using the methods and materials described above with reference to FIG.

In Figure 14, a reflective material 36 is disposed in the region between the LEDs as described above with reference to Figure 5. The LEDs are then separated by cutting through, for example, structures in regions 38 between adjacent LEDs, as described above with reference to FIG. Next, the LEDs are removed from the temporary carrier 30 as described above with reference to FIG.

15 and 16 illustrate an alternate embodiment. In Figure 15, the LEDs are attached to a temporary carrier 30, which may be a temporary carrier such as one of the temporary carriers described above with reference to Figure 2. Prior to attaching the LED to the temporary carrier 30 or after attaching the LED to the temporary carrier 30, the top of the LED is covered with a wavelength conversion layer 42 in some embodiments and covered with a wavelength conversion layer 42 in some embodiments. The top and side of the LED. The wavelength converting layer 42 can be, for example, a wavelength converting material mixed with a transparent material, and the wavelength converting layer 42 can be formed by any suitable technique including, for example, lamination, molding, or electrophoretic deposition.

In Figure 16, a reflective material 36 is disposed in the region between the LEDs as described above with reference to Figure 5. The reflective material 36 can be formed by a technique that limits damage to the substantially isomorphic wavelength converting layer 42. An example of a suitable technique is to dispense reflective particles mixed with liquid polyoxane in the region between the LEDs, followed by solidification of the liquid polyoxygen. The LEDs are then separated by cutting through, for example, structures in regions 38 between adjacent LEDs, as described above with reference to FIG. Next, the LEDs are removed from the temporary carrier 30 as described above with reference to FIG.

17, 18, 19 and 20 illustrate an alternate embodiment. In Figure 17, the LED is attached Connected to a temporary carrier 30, the temporary carrier 30 can be a temporary carrier such as one of the temporary carriers described above with reference to FIG. The top of the LED is covered with a mask layer 44 prior to attaching the LED to the temporary carrier or after attaching the LED to the temporary carrier. In some embodiments, the mask layer is applied to the growth substrate of one of the LEDs before the LED is segmented by cutting the growth substrate. Mask layer 44 can be, for example, a photoresist, a dielectric material, or any other suitable material. The mask layer 44 can be formed by any suitable technique including, for example, spin coating, roll coating, dip coating, lamination, spin coating, evaporation, sputtering, and direct pick-and-place of a part such as a piece of glass. . In some embodiments, the mask layer 44 is patterned, for example, by photolithography, shadow masking, and/or wet or dry chemical etching.

In Figure 18, a reflective coating 46 is disposed on the structure depicted in Figure 17. Reflective coating 46 can be any suitable material including, for example, a dichroic mirror, a distributed Bragg reflector (DBR), a metal film, or other suitable dielectric stack. The reflective coating 46 can be formed by any suitable technique including, for example, physical vapor deposition, CVD, sputtering, evaporation, and spin coating. The reflective coating 46 can be substantially contoured to coat the structure, as depicted in Figure 18, but this is not required.

In Figure 19, the mask layer 44 and the reflective coating 46 on top of the LED are removed by any suitable procedure, such as, for example, a stripping procedure. After the mask layer 44 is removed, the reflective coating 46 remains on the sidewalls of the LED and the area between the LEDs.

In Fig. 20, a wavelength conversion layer 48 is formed on the structure shown in Fig. 19. The wavelength converting layer 48 can be, for example, a wavelength converting material mixed with a transparent material, and the wavelength converting layer 48 can be formed by any suitable technique including, for example, lamination, molding, spraying, or spin coating. The wavelength conversion layer 48 can fill the area between the LEDs, as depicted in Figure 20, or the wavelength conversion layer 48 can be a substantially isomorphous layer. The LEDs are then separated by cutting through, for example, structures in regions 38 between adjacent LEDs, as described above with reference to FIG. Next, the LEDs are removed from the temporary carrier 30 as described above with reference to FIG.

In some embodiments, a lens or other optical component is formed on the final LED, which The final LED can be any of the devices described above. In any of the devices described above, in some embodiments, the sidewalls of the growth substrate can be tilted.

Although the invention has been described in detail, it is understood by those skilled in the art that the present invention may be modified without departing from the spirit of the invention. Therefore, the scope of the invention is not intended to be limited to the particular embodiments shown and described.

10‧‧‧Growth substrate/growth substrate wafer

12‧‧‧Group III nitride semiconductor structure/block

14‧‧‧Interconnects/blocks

30‧‧‧ temporary carrier

34‧‧‧wavelength conversion component/wavelength conversion component

36‧‧‧Reflective materials

38‧‧‧Area

Claims (14)

A device comprising: a semiconductor structure comprising an emissive layer sandwiched between an n-type region and a p-type region; a growth substrate attached to the semiconductor structure, the growth substrate having at least one sloped sidewall And a reflective layer disposed on the inclined sidewall; wherein the reflective layer is configured such that most of the light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate. The device of claim 1, further comprising a wavelength conversion layer disposed on the first surface of the growth substrate. The device of claim 1, wherein the growth substrate has a thickness of less than 150 microns. A device comprising: a semiconductor structure comprising an emissive layer sandwiched between an n-type region and a p-type region; a growth substrate attached to the semiconductor structure, the growth substrate having a thickness of less than 150 microns a thickness; and a reflective layer disposed on a sidewall of the growth substrate and a sidewall of the semiconductor structure; wherein the reflective layer is configured such that most of the light extracted from the semiconductor structure and the growth substrate is transmitted through the growth substrate One of the first surface extractions. The device of claim 4, further comprising a wavelength conversion layer disposed on the first surface of the growth substrate. The device of claim 5, wherein the wavelength conversion layer is formed to be associated with the semiconductor structure Separated and attached to the growth substrate. The device of claim 6, wherein the reflective layer is disposed on a sidewall of the wavelength conversion layer. A method comprising: attaching a plurality of semiconductor light emitting devices to a carrier; disposing a reflective material in a region between the semiconductor light emitting devices; separating two adjacent semiconductor light emitting devices, wherein separating comprises cutting the a reflective material; and removing the carrier after separating two adjacent semiconductor light emitting devices. The method of claim 8, wherein attaching the plurality of semiconductor light emitting devices to a carrier comprises attaching a growth substrate wafer on which a plurality of semiconductor light emitting devices are formed to a carrier, the method further comprising emitting light in the semiconductors Slots in the growth substrate wafer are formed in regions between the devices, wherein disposing a reflective material in the region between the semiconductor light emitting devices includes placing a reflective material in the slots. The method of claim 8, further comprising: attaching a wavelength converting component to each of the plurality of semiconductor light emitting devices prior to disposing a reflective material in a region between the semiconductor light emitting devices, wherein the wavelength A conversion component is formed to be separated from the semiconductor light emitting device. The method of claim 8, further comprising: forming a wavelength conversion layer on the plurality of semiconductor light emitting devices after disposing a reflective material in a region between the semiconductor light emitting devices. The method of claim 8, wherein attaching the plurality of semiconductor light emitting devices to a carrier comprises: attaching a plurality of wavelength converting components to a carrier; and attaching a semiconductor light emitting device to each of the wavelength converting components . The method of claim 8, further comprising: mounting the plurality of semiconductor illuminators A wavelength conversion layer is disposed on each of the plurality of semiconductor light emitting devices before being attached to a carrier. The method of claim 8, wherein the disposing a reflective material in the region between the semiconductor light emitting devices comprises: forming a mask layer on the first surface of the semiconductor light emitting devices; Forming a reflective layer on sidewalls of the plurality of semiconductor light emitting devices; and removing the mask layer; the method further comprising: forming a wavelength on the first surfaces of the semiconductor light emitting devices after removing the mask layer Conversion layer.