JP2016533029A5 - - Google Patents

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JP2016533029A5
JP2016533029A5 JP2016528617A JP2016528617A JP2016533029A5 JP 2016533029 A5 JP2016533029 A5 JP 2016533029A5 JP 2016528617 A JP2016528617 A JP 2016528617A JP 2016528617 A JP2016528617 A JP 2016528617A JP 2016533029 A5 JP2016533029 A5 JP 2016533029A5
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Japan
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growth substrate
substrate
forming
thinning
sapphire substrate
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JP2016528617A
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Japanese (ja)
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JP6429872B2 (ja
JP2016533029A (ja
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Priority claimed from PCT/IB2014/062784 external-priority patent/WO2015011583A1/en
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Publication of JP2016533029A5 publication Critical patent/JP2016533029A5/ja
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JP2016528617A 2013-07-22 2014-07-02 基板ウェハ上に形成された発光デバイスを分離する方法 Active JP6429872B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361856857P 2013-07-22 2013-07-22
US61/856,857 2013-07-22
PCT/IB2014/062784 WO2015011583A1 (en) 2013-07-22 2014-07-02 Method of separating light emitting devices formed on a substrate wafer

Related Child Applications (1)

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JP2018203388A Division JP2019033280A (ja) 2013-07-22 2018-10-30 基板ウェハ上に形成された発光デバイスを分離する方法

Publications (3)

Publication Number Publication Date
JP2016533029A JP2016533029A (ja) 2016-10-20
JP2016533029A5 true JP2016533029A5 (enExample) 2017-08-10
JP6429872B2 JP6429872B2 (ja) 2018-11-28

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JP2016528617A Active JP6429872B2 (ja) 2013-07-22 2014-07-02 基板ウェハ上に形成された発光デバイスを分離する方法
JP2018203388A Pending JP2019033280A (ja) 2013-07-22 2018-10-30 基板ウェハ上に形成された発光デバイスを分離する方法

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US (3) US10079327B2 (enExample)
EP (1) EP3025378B1 (enExample)
JP (2) JP6429872B2 (enExample)
KR (1) KR102231083B1 (enExample)
CN (1) CN105556684B (enExample)
TW (2) TWI726494B (enExample)
WO (1) WO2015011583A1 (enExample)

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WO2022141233A1 (zh) * 2020-12-30 2022-07-07 泉州三安半导体科技有限公司 一种半导体发光元件及其制备方法
CN114141914B (zh) * 2021-12-01 2023-05-23 东莞市中麒光电技术有限公司 衬底剥离方法
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