CN105556684B - 分离形成在衬底晶片上的发光设备的方法 - Google Patents

分离形成在衬底晶片上的发光设备的方法 Download PDF

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Publication number
CN105556684B
CN105556684B CN201480052062.5A CN201480052062A CN105556684B CN 105556684 B CN105556684 B CN 105556684B CN 201480052062 A CN201480052062 A CN 201480052062A CN 105556684 B CN105556684 B CN 105556684B
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China
Prior art keywords
substrate
sapphire substrate
crack
leds
thinned
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Chinese (zh)
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CN105556684A (zh
Inventor
F.伊利夫斯基
N.A.M.斯维格斯
K-H.H.崔
M.A.德桑伯
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Lumileds Holding BV
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Lumileds Holding BV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Landscapes

  • Led Devices (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
CN201480052062.5A 2013-07-22 2014-07-02 分离形成在衬底晶片上的发光设备的方法 Active CN105556684B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361856857P 2013-07-22 2013-07-22
US61/856857 2013-07-22
PCT/IB2014/062784 WO2015011583A1 (en) 2013-07-22 2014-07-02 Method of separating light emitting devices formed on a substrate wafer

Publications (2)

Publication Number Publication Date
CN105556684A CN105556684A (zh) 2016-05-04
CN105556684B true CN105556684B (zh) 2019-10-18

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Country Status (7)

Country Link
US (3) US10079327B2 (enExample)
EP (1) EP3025378B1 (enExample)
JP (2) JP6429872B2 (enExample)
KR (1) KR102231083B1 (enExample)
CN (1) CN105556684B (enExample)
TW (2) TWI680588B (enExample)
WO (1) WO2015011583A1 (enExample)

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DE102018111227A1 (de) * 2018-05-09 2019-11-14 Osram Opto Semiconductors Gmbh Verfahren zum Durchtrennen eines epitaktisch gewachsenen Halbleiterkörpers und Halbleiterchip
US10903265B2 (en) * 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
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CN112967990B (zh) * 2020-11-23 2023-02-24 重庆康佳光电技术研究院有限公司 芯片处理方法、led芯片及显示装置
US11329208B1 (en) * 2020-12-01 2022-05-10 J C Chen Pixel assembly process
CN112701051B (zh) * 2020-12-25 2024-06-28 江苏中科智芯集成科技有限公司 一种高效散热的扇出型封装结构及其方法
WO2022141233A1 (zh) * 2020-12-30 2022-07-07 泉州三安半导体科技有限公司 一种半导体发光元件及其制备方法
CN114141914B (zh) * 2021-12-01 2023-05-23 东莞市中麒光电技术有限公司 衬底剥离方法
FR3144532A1 (fr) * 2022-12-28 2024-07-05 Aledia Procede de fabrication d'un dispositif electronique

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Also Published As

Publication number Publication date
TWI726494B (zh) 2021-05-01
US11038081B2 (en) 2021-06-15
KR20160034987A (ko) 2016-03-30
TW201511330A (zh) 2015-03-16
TWI680588B (zh) 2019-12-21
US20200235259A1 (en) 2020-07-23
JP6429872B2 (ja) 2018-11-28
EP3025378A1 (en) 2016-06-01
CN105556684A (zh) 2016-05-04
JP2019033280A (ja) 2019-02-28
US20190103508A1 (en) 2019-04-04
TW202006969A (zh) 2020-02-01
JP2016533029A (ja) 2016-10-20
EP3025378B1 (en) 2020-05-06
US20160163916A1 (en) 2016-06-09
WO2015011583A1 (en) 2015-01-29
US11038082B2 (en) 2021-06-15
US10079327B2 (en) 2018-09-18
KR102231083B1 (ko) 2021-03-23

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