TWI680588B - 分離形成於基板晶圓上之發光裝置之方法 - Google Patents
分離形成於基板晶圓上之發光裝置之方法 Download PDFInfo
- Publication number
- TWI680588B TWI680588B TW103125179A TW103125179A TWI680588B TW I680588 B TWI680588 B TW I680588B TW 103125179 A TW103125179 A TW 103125179A TW 103125179 A TW103125179 A TW 103125179A TW I680588 B TWI680588 B TW I680588B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- sapphire substrate
- cracks
- thinning
- light
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 150
- 238000000034 method Methods 0.000 title claims abstract description 47
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 43
- 239000010980 sapphire Substances 0.000 claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 230000035515 penetration Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 18
- 239000000463 material Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- -1 thicknesses Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
Landscapes
- Led Devices (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Engineering & Computer Science (AREA)
- Drying Of Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361856857P | 2013-07-22 | 2013-07-22 | |
| US61/856,857 | 2013-07-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201511330A TW201511330A (zh) | 2015-03-16 |
| TWI680588B true TWI680588B (zh) | 2019-12-21 |
Family
ID=51355579
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103125179A TWI680588B (zh) | 2013-07-22 | 2014-07-22 | 分離形成於基板晶圓上之發光裝置之方法 |
| TW108142484A TWI726494B (zh) | 2013-07-22 | 2014-07-22 | 分離形成於基板晶圓上之發光裝置之方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108142484A TWI726494B (zh) | 2013-07-22 | 2014-07-22 | 分離形成於基板晶圓上之發光裝置之方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US10079327B2 (enExample) |
| EP (1) | EP3025378B1 (enExample) |
| JP (2) | JP6429872B2 (enExample) |
| KR (1) | KR102231083B1 (enExample) |
| CN (1) | CN105556684B (enExample) |
| TW (2) | TWI680588B (enExample) |
| WO (1) | WO2015011583A1 (enExample) |
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| US11160148B2 (en) | 2017-06-13 | 2021-10-26 | Ideal Industries Lighting Llc | Adaptive area lamp |
| US11792898B2 (en) | 2012-07-01 | 2023-10-17 | Ideal Industries Lighting Llc | Enhanced fixtures for area lighting |
| DE102015109413A1 (de) * | 2015-06-12 | 2016-12-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Konversions-Halbleiterchips und Verbund von Konversions-Halbleiterchips |
| US10529696B2 (en) | 2016-04-12 | 2020-01-07 | Cree, Inc. | High density pixelated LED and devices and methods thereof |
| WO2017190060A1 (en) * | 2016-04-29 | 2017-11-02 | Flir Systems, Inc. | Methods for singulation and packaging |
| DE102016109720B4 (de) * | 2016-05-25 | 2023-06-22 | Infineon Technologies Ag | Verfahren zum Bilden eines Halbleiterbauelements und Halbleiterbauelement |
| JP6981800B2 (ja) * | 2017-07-28 | 2021-12-17 | 浜松ホトニクス株式会社 | 積層型素子の製造方法 |
| KR102601620B1 (ko) | 2017-08-03 | 2023-11-15 | 크리엘이디, 인크. | 고밀도 픽셀화된 led 칩 및 칩 어레이 장치, 그리고 그 제조 방법 |
| US10734363B2 (en) | 2017-08-03 | 2020-08-04 | Cree, Inc. | High density pixelated-LED chips and chip array devices |
| US10529773B2 (en) | 2018-02-14 | 2020-01-07 | Cree, Inc. | Solid state lighting devices with opposing emission directions |
| DE102018111227A1 (de) * | 2018-05-09 | 2019-11-14 | Osram Opto Semiconductors Gmbh | Verfahren zum Durchtrennen eines epitaktisch gewachsenen Halbleiterkörpers und Halbleiterchip |
| US10903265B2 (en) | 2018-12-21 | 2021-01-26 | Cree, Inc. | Pixelated-LED chips and chip array devices, and fabrication methods |
| US12426506B2 (en) | 2019-07-19 | 2025-09-23 | Evatec Ag | Piezoelectric coating and deposition process |
| KR102868185B1 (ko) * | 2019-08-16 | 2025-10-01 | 삼성전자주식회사 | 반도체 기판 및 이의 절단 방법 |
| EP4052296A1 (en) | 2019-10-29 | 2022-09-07 | Creeled, Inc. | Texturing for high density pixelated-led chips |
| US11646392B2 (en) | 2020-06-09 | 2023-05-09 | Nichia Corporation | Method of manufacturing light-emitting device |
| US11437548B2 (en) | 2020-10-23 | 2022-09-06 | Creeled, Inc. | Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods |
| CN112967990B (zh) * | 2020-11-23 | 2023-02-24 | 重庆康佳光电技术研究院有限公司 | 芯片处理方法、led芯片及显示装置 |
| US11329208B1 (en) * | 2020-12-01 | 2022-05-10 | J C Chen | Pixel assembly process |
| CN112701051B (zh) * | 2020-12-25 | 2024-06-28 | 江苏中科智芯集成科技有限公司 | 一种高效散热的扇出型封装结构及其方法 |
| WO2022141233A1 (zh) * | 2020-12-30 | 2022-07-07 | 泉州三安半导体科技有限公司 | 一种半导体发光元件及其制备方法 |
| CN114141914B (zh) * | 2021-12-01 | 2023-05-23 | 东莞市中麒光电技术有限公司 | 衬底剥离方法 |
| FR3144532A1 (fr) * | 2022-12-28 | 2024-07-05 | Aledia | Procede de fabrication d'un dispositif electronique |
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| WO2005122223A1 (en) * | 2004-06-11 | 2005-12-22 | Showa Denko K.K. | Production method of compound semiconductor device wafer |
| US20130029445A1 (en) * | 2011-07-25 | 2013-01-31 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor light emitting device |
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-
2014
- 2014-07-02 WO PCT/IB2014/062784 patent/WO2015011583A1/en not_active Ceased
- 2014-07-02 KR KR1020167004378A patent/KR102231083B1/ko active Active
- 2014-07-02 US US14/906,539 patent/US10079327B2/en active Active
- 2014-07-02 CN CN201480052062.5A patent/CN105556684B/zh active Active
- 2014-07-02 EP EP14752405.2A patent/EP3025378B1/en active Active
- 2014-07-02 JP JP2016528617A patent/JP6429872B2/ja active Active
- 2014-07-22 TW TW103125179A patent/TWI680588B/zh active
- 2014-07-22 TW TW108142484A patent/TWI726494B/zh active
-
2018
- 2018-09-18 US US16/134,441 patent/US11038081B2/en active Active
- 2018-10-30 JP JP2018203388A patent/JP2019033280A/ja active Pending
-
2020
- 2020-04-06 US US16/841,144 patent/US11038082B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1376687A2 (en) * | 2002-06-24 | 2004-01-02 | Toyoda Gosei Co., Ltd. | Semiconductor element and method for producing the same |
| WO2005122223A1 (en) * | 2004-06-11 | 2005-12-22 | Showa Denko K.K. | Production method of compound semiconductor device wafer |
| US20130029445A1 (en) * | 2011-07-25 | 2013-01-31 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019033280A (ja) | 2019-02-28 |
| CN105556684B (zh) | 2019-10-18 |
| TW202006969A (zh) | 2020-02-01 |
| JP2016533029A (ja) | 2016-10-20 |
| US11038081B2 (en) | 2021-06-15 |
| EP3025378A1 (en) | 2016-06-01 |
| US10079327B2 (en) | 2018-09-18 |
| TW201511330A (zh) | 2015-03-16 |
| WO2015011583A1 (en) | 2015-01-29 |
| KR102231083B1 (ko) | 2021-03-23 |
| TWI726494B (zh) | 2021-05-01 |
| US20160163916A1 (en) | 2016-06-09 |
| US20200235259A1 (en) | 2020-07-23 |
| JP6429872B2 (ja) | 2018-11-28 |
| US11038082B2 (en) | 2021-06-15 |
| KR20160034987A (ko) | 2016-03-30 |
| EP3025378B1 (en) | 2020-05-06 |
| CN105556684A (zh) | 2016-05-04 |
| US20190103508A1 (en) | 2019-04-04 |
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