KR102231083B1 - 기판 웨이퍼 상에 형성된 발광 디바이스들을 분리시키는 방법 - Google Patents

기판 웨이퍼 상에 형성된 발광 디바이스들을 분리시키는 방법 Download PDF

Info

Publication number
KR102231083B1
KR102231083B1 KR1020167004378A KR20167004378A KR102231083B1 KR 102231083 B1 KR102231083 B1 KR 102231083B1 KR 1020167004378 A KR1020167004378 A KR 1020167004378A KR 20167004378 A KR20167004378 A KR 20167004378A KR 102231083 B1 KR102231083 B1 KR 102231083B1
Authority
KR
South Korea
Prior art keywords
substrate
cracks
leds
thinning
sapphire substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167004378A
Other languages
English (en)
Korean (ko)
Other versions
KR20160034987A (ko
Inventor
필립 일리에브스키
노베르투스 안토니우스 마리아 스위거스
쾅-힌 헨리 최
마크 안드레 드 샘버
Original Assignee
루미리즈 홀딩 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 루미리즈 홀딩 비.브이. filed Critical 루미리즈 홀딩 비.브이.
Publication of KR20160034987A publication Critical patent/KR20160034987A/ko
Application granted granted Critical
Publication of KR102231083B1 publication Critical patent/KR102231083B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L33/20—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H01L33/0093—
    • H01L33/0095—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Landscapes

  • Led Devices (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
KR1020167004378A 2013-07-22 2014-07-02 기판 웨이퍼 상에 형성된 발광 디바이스들을 분리시키는 방법 Active KR102231083B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361856857P 2013-07-22 2013-07-22
US61/856,857 2013-07-22
PCT/IB2014/062784 WO2015011583A1 (en) 2013-07-22 2014-07-02 Method of separating light emitting devices formed on a substrate wafer

Publications (2)

Publication Number Publication Date
KR20160034987A KR20160034987A (ko) 2016-03-30
KR102231083B1 true KR102231083B1 (ko) 2021-03-23

Family

ID=51355579

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167004378A Active KR102231083B1 (ko) 2013-07-22 2014-07-02 기판 웨이퍼 상에 형성된 발광 디바이스들을 분리시키는 방법

Country Status (7)

Country Link
US (3) US10079327B2 (enExample)
EP (1) EP3025378B1 (enExample)
JP (2) JP6429872B2 (enExample)
KR (1) KR102231083B1 (enExample)
CN (1) CN105556684B (enExample)
TW (2) TWI726494B (enExample)
WO (1) WO2015011583A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11160148B2 (en) 2017-06-13 2021-10-26 Ideal Industries Lighting Llc Adaptive area lamp
US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
DE102015109413A1 (de) * 2015-06-12 2016-12-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Konversions-Halbleiterchips und Verbund von Konversions-Halbleiterchips
US10529696B2 (en) 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
CN109075138A (zh) * 2016-04-29 2018-12-21 弗莱尔系统公司 分离和封装的方法
DE102016109720B4 (de) 2016-05-25 2023-06-22 Infineon Technologies Ag Verfahren zum Bilden eines Halbleiterbauelements und Halbleiterbauelement
JP6981800B2 (ja) * 2017-07-28 2021-12-17 浜松ホトニクス株式会社 積層型素子の製造方法
US10651357B2 (en) 2017-08-03 2020-05-12 Cree, Inc. High density pixelated-led chips and chip array devices
US10734363B2 (en) 2017-08-03 2020-08-04 Cree, Inc. High density pixelated-LED chips and chip array devices
US10529773B2 (en) 2018-02-14 2020-01-07 Cree, Inc. Solid state lighting devices with opposing emission directions
DE102018111227A1 (de) * 2018-05-09 2019-11-14 Osram Opto Semiconductors Gmbh Verfahren zum Durchtrennen eines epitaktisch gewachsenen Halbleiterkörpers und Halbleiterchip
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
JP2022541291A (ja) 2019-07-19 2022-09-22 エヴァテック・アーゲー 圧電コーティングおよび堆積プロセス
KR102868185B1 (ko) * 2019-08-16 2025-10-01 삼성전자주식회사 반도체 기판 및 이의 절단 방법
EP4052296A1 (en) 2019-10-29 2022-09-07 Creeled, Inc. Texturing for high density pixelated-led chips
US11646392B2 (en) 2020-06-09 2023-05-09 Nichia Corporation Method of manufacturing light-emitting device
US11437548B2 (en) 2020-10-23 2022-09-06 Creeled, Inc. Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods
CN112967990B (zh) * 2020-11-23 2023-02-24 重庆康佳光电技术研究院有限公司 芯片处理方法、led芯片及显示装置
US11329208B1 (en) * 2020-12-01 2022-05-10 J C Chen Pixel assembly process
CN112701051B (zh) * 2020-12-25 2024-06-28 江苏中科智芯集成科技有限公司 一种高效散热的扇出型封装结构及其方法
WO2022141233A1 (zh) * 2020-12-30 2022-07-07 泉州三安半导体科技有限公司 一种半导体发光元件及其制备方法
CN114141914B (zh) * 2021-12-01 2023-05-23 东莞市中麒光电技术有限公司 衬底剥离方法
FR3144532A1 (fr) * 2022-12-28 2024-07-05 Aledia Procede de fabrication d'un dispositif electronique

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011040564A (ja) 2009-08-11 2011-02-24 Toshiba Corp 半導体素子の製造方法および製造装置

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6518079B2 (en) 2000-12-20 2003-02-11 Lumileds Lighting, U.S., Llc Separation method for gallium nitride devices on lattice-mismatched substrates
US6576488B2 (en) * 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
JP4529319B2 (ja) 2001-06-27 2010-08-25 日亜化学工業株式会社 半導体チップとその製造方法
CN101335235B (zh) 2002-03-12 2010-10-13 浜松光子学株式会社 基板的分割方法
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US6818532B2 (en) * 2002-04-09 2004-11-16 Oriol, Inc. Method of etching substrates
US6580054B1 (en) * 2002-06-10 2003-06-17 New Wave Research Scribing sapphire substrates with a solid state UV laser
JP2004165227A (ja) * 2002-11-08 2004-06-10 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子の製造方法
CN1241253C (zh) * 2002-06-24 2006-02-08 丰田合成株式会社 半导体元件的制造方法
JP3978514B2 (ja) 2002-12-24 2007-09-19 株式会社ナノテム 発光素子の製造方法および発光素子
US7420218B2 (en) * 2004-03-18 2008-09-02 Matsushita Electric Industrial Co., Ltd. Nitride based LED with a p-type injection region
KR100854986B1 (ko) * 2004-06-11 2008-08-28 쇼와 덴코 가부시키가이샤 화합물 반도체 소자 웨이퍼의 제조방법
JP2006173179A (ja) * 2004-12-13 2006-06-29 Toshiba Corp 半導体装置の製造方法
CN100433261C (zh) * 2005-03-18 2008-11-12 夏普株式会社 氮化物半导体器件制造方法
JP4818732B2 (ja) 2005-03-18 2011-11-16 シャープ株式会社 窒化物半導体素子の製造方法
JP5016808B2 (ja) 2005-11-08 2012-09-05 ローム株式会社 窒化物半導体発光素子及び窒化物半導体発光素子製造方法
JP2007173465A (ja) * 2005-12-21 2007-07-05 Rohm Co Ltd 窒化物半導体発光素子の製造方法
KR101262386B1 (ko) 2006-09-25 2013-05-08 엘지이노텍 주식회사 질화물 반도체 발광소자의 제조 방법
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US8232564B2 (en) 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
CN100580905C (zh) 2007-04-20 2010-01-13 晶能光电（江西）有限公司 获得在分割衬底上制造的半导体器件的高质量边界的方法
KR20100020936A (ko) * 2007-07-12 2010-02-23 라티스 파워(지앙시) 코포레이션 파티션화된 기판 상에 제작되는 반도체 소자용 고품질 경계부 형성 방법
JP2009032795A (ja) * 2007-07-25 2009-02-12 Rohm Co Ltd 窒化物半導体発光素子の製造方法
US8222064B2 (en) 2007-08-10 2012-07-17 Hong Kong Applied Science and Technology Research Institute Company Limited Vertical light emitting diode device structure and method of fabricating the same
EP2199007A4 (en) 2007-10-16 2011-02-09 Mitsuboshi Diamond Ind Co Ltd METHOD OF MACHINING A U-SHAPED GROOVE OF A FRAGILE MATERIAL SUBSTRATE, REMOVAL METHOD, DRILLING METHOD, AND CHAMFREINING METHOD USING THE SAME
JP2010171371A (ja) * 2008-12-26 2010-08-05 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子の製造方法
US8324083B2 (en) 2008-09-30 2012-12-04 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor element
JP4386142B2 (ja) * 2009-01-23 2009-12-16 三菱化学株式会社 窒化物系半導体素子の製造方法
JP5307612B2 (ja) 2009-04-20 2013-10-02 株式会社ディスコ 光デバイスウエーハの加工方法
CN101930942A (zh) * 2009-06-24 2010-12-29 宇威光电股份有限公司 半导体晶圆的切割方法
JP2011071272A (ja) 2009-09-25 2011-04-07 Toshiba Corp 半導体発光装置及びその製造方法
JP2011171327A (ja) * 2010-02-16 2011-09-01 Toshiba Corp 発光素子およびその製造方法、並びに発光装置
CN102569543B (zh) * 2010-12-30 2015-09-02 比亚迪股份有限公司 一种发光二极管芯片的制作方法
JP2012184144A (ja) 2011-03-07 2012-09-27 Tokuyama Corp 窒化ガリウム結晶積層基板及びその製造方法
KR20130012376A (ko) * 2011-07-25 2013-02-04 삼성전자주식회사 반도체 발광소자 제조방법
US20130140592A1 (en) * 2011-12-01 2013-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Light emitting diode with improved light extraction efficiency and methods of manufacturing same
WO2013094078A1 (ja) * 2011-12-21 2013-06-27 ウェーブスクエア，インコーポレイテッド 半導体素子およびその製造方法ならびに半導体素子結合体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011040564A (ja) 2009-08-11 2011-02-24 Toshiba Corp 半導体素子の製造方法および製造装置

Also Published As

Publication number Publication date
US20160163916A1 (en) 2016-06-09
WO2015011583A1 (en) 2015-01-29
TW201511330A (zh) 2015-03-16
JP2016533029A (ja) 2016-10-20
US10079327B2 (en) 2018-09-18
US11038082B2 (en) 2021-06-15
TWI726494B (zh) 2021-05-01
US11038081B2 (en) 2021-06-15
US20200235259A1 (en) 2020-07-23
TW202006969A (zh) 2020-02-01
CN105556684A (zh) 2016-05-04
TWI680588B (zh) 2019-12-21
JP6429872B2 (ja) 2018-11-28
EP3025378B1 (en) 2020-05-06
EP3025378A1 (en) 2016-06-01
KR20160034987A (ko) 2016-03-30
JP2019033280A (ja) 2019-02-28
CN105556684B (zh) 2019-10-18
US20190103508A1 (en) 2019-04-04

Similar Documents

Publication Publication Date Title
US11038082B2 (en) Method of separating light emitting devices formed on a substrate wafer
JP6680670B2 (ja) トップエミッション型半導体発光デバイス
CN106575693B (zh) 具有小源尺寸的波长转换发光设备
TWI607583B (zh) 半導體裝置製造方法
JP5074396B2 (ja) 半導体ウエハの横方向分断のための方法及びオプトエレクトロニクス構成素子
KR20110055745A (ko) 복합 기판 상에 성장되는 반도체 발광 장치
EP2828899B1 (en) Light emitting device grown on a silicon substrate
KR20090076163A (ko) 질화물 반도체 발광소자 제조방법 및 이에 의해 제조된질화물 반도체 발광소자
US9159876B2 (en) Surface treatment of a semiconductor light emitting device
US10672945B2 (en) Method for manufacturing light emitting device
KR20130104518A (ko) 반도체 발광소자의 제조방법
US9608016B2 (en) Method of separating a wafer of semiconductor devices
EP3063786B1 (en) Scribing a wafer of semiconductor devices

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20160219

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PN2301 Change of applicant

Patent event date: 20180214

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20190702

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20200625

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20201222

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20210317

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20210317

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20240305

Start annual number: 4

End annual number: 4