JP6429872B2 - 基板ウェハ上に形成された発光デバイスを分離する方法 - Google Patents

基板ウェハ上に形成された発光デバイスを分離する方法 Download PDF

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JP6429872B2
JP6429872B2 JP2016528617A JP2016528617A JP6429872B2 JP 6429872 B2 JP6429872 B2 JP 6429872B2 JP 2016528617 A JP2016528617 A JP 2016528617A JP 2016528617 A JP2016528617 A JP 2016528617A JP 6429872 B2 JP6429872 B2 JP 6429872B2
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substrate
crack
thinning
sapphire substrate
forming
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JP2016533029A5 (enExample
JP2016533029A (ja
Inventor
イリフスキー，フィリップ
アントニユス マリア スウェーヘルス，ノルベルテュス
アントニユス マリア スウェーヘルス，ノルベルテュス
ヘンリー チョイ，クウォン−ヒン
ヘンリー チョイ，クウォン−ヒン
サンベル，マルク アンドレ デ
サンベル，マルク アンドレ デ
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Koninklijke Philips NV
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Koninklijke Philips NV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

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  • Led Devices (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Engineering & Computer Science (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2016528617A 2013-07-22 2014-07-02 基板ウェハ上に形成された発光デバイスを分離する方法 Active JP6429872B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361856857P 2013-07-22 2013-07-22
US61/856,857 2013-07-22
PCT/IB2014/062784 WO2015011583A1 (en) 2013-07-22 2014-07-02 Method of separating light emitting devices formed on a substrate wafer

Related Child Applications (1)

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JP2018203388A Division JP2019033280A (ja) 2013-07-22 2018-10-30 基板ウェハ上に形成された発光デバイスを分離する方法

Publications (3)

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JP2016533029A JP2016533029A (ja) 2016-10-20
JP2016533029A5 JP2016533029A5 (enExample) 2017-08-10
JP6429872B2 true JP6429872B2 (ja) 2018-11-28

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JP2016528617A Active JP6429872B2 (ja) 2013-07-22 2014-07-02 基板ウェハ上に形成された発光デバイスを分離する方法
JP2018203388A Pending JP2019033280A (ja) 2013-07-22 2018-10-30 基板ウェハ上に形成された発光デバイスを分離する方法

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US (3) US10079327B2 (enExample)
EP (1) EP3025378B1 (enExample)
JP (2) JP6429872B2 (enExample)
KR (1) KR102231083B1 (enExample)
CN (1) CN105556684B (enExample)
TW (2) TWI726494B (enExample)
WO (1) WO2015011583A1 (enExample)

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WO2022141233A1 (zh) * 2020-12-30 2022-07-07 泉州三安半导体科技有限公司 一种半导体发光元件及其制备方法
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US20160163916A1 (en) 2016-06-09
US11038081B2 (en) 2021-06-15
EP3025378A1 (en) 2016-06-01
TW202006969A (zh) 2020-02-01
TW201511330A (zh) 2015-03-16
EP3025378B1 (en) 2020-05-06
US11038082B2 (en) 2021-06-15
US10079327B2 (en) 2018-09-18
KR102231083B1 (ko) 2021-03-23
WO2015011583A1 (en) 2015-01-29
CN105556684A (zh) 2016-05-04
KR20160034987A (ko) 2016-03-30
TWI680588B (zh) 2019-12-21
JP2016533029A (ja) 2016-10-20
CN105556684B (zh) 2019-10-18
TWI726494B (zh) 2021-05-01
JP2019033280A (ja) 2019-02-28
US20200235259A1 (en) 2020-07-23
US20190103508A1 (en) 2019-04-04

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