JP2008042143A5 - - Google Patents

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Publication number
JP2008042143A5
JP2008042143A5 JP2006218463A JP2006218463A JP2008042143A5 JP 2008042143 A5 JP2008042143 A5 JP 2008042143A5 JP 2006218463 A JP2006218463 A JP 2006218463A JP 2006218463 A JP2006218463 A JP 2006218463A JP 2008042143 A5 JP2008042143 A5 JP 2008042143A5
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JP
Japan
Prior art keywords
compound semiconductor
nitride compound
group iii
iii nitride
substrate
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Application number
JP2006218463A
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English (en)
Japanese (ja)
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JP2008042143A (ja
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Priority to JP2006218463A priority Critical patent/JP2008042143A/ja
Priority claimed from JP2006218463A external-priority patent/JP2008042143A/ja
Publication of JP2008042143A publication Critical patent/JP2008042143A/ja
Publication of JP2008042143A5 publication Critical patent/JP2008042143A5/ja
Withdrawn legal-status Critical Current

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JP2006218463A 2006-08-10 2006-08-10 Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法 Withdrawn JP2008042143A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006218463A JP2008042143A (ja) 2006-08-10 2006-08-10 Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006218463A JP2008042143A (ja) 2006-08-10 2006-08-10 Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法

Publications (2)

Publication Number Publication Date
JP2008042143A JP2008042143A (ja) 2008-02-21
JP2008042143A5 true JP2008042143A5 (enExample) 2010-09-16

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ID=39176770

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JP2006218463A Withdrawn JP2008042143A (ja) 2006-08-10 2006-08-10 Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法

Country Status (1)

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JP (1) JP2008042143A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101470020B1 (ko) * 2008-03-18 2014-12-10 엘지이노텍 주식회사 샌드위치 구조의 웨이퍼 결합 및 포톤 빔을 이용한 단결정 반도체 박막 전이
JP2009231549A (ja) * 2008-03-24 2009-10-08 Toyoda Gosei Co Ltd 窒化物系半導体発光素子
US20110127567A1 (en) 2008-06-02 2011-06-02 Korea University Industrial & Academic Collaboration Foundation Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates
JP5237764B2 (ja) * 2008-11-10 2013-07-17 スタンレー電気株式会社 半導体素子の製造方法
JP5237763B2 (ja) * 2008-11-10 2013-07-17 スタンレー電気株式会社 半導体素子の製造方法
JP5237765B2 (ja) * 2008-11-10 2013-07-17 スタンレー電気株式会社 半導体素子の製造方法
KR101608868B1 (ko) * 2009-10-22 2016-04-04 삼성전자주식회사 조리개를 포함하는 발광다이오드 어레이, 이를 이용한 라인 프린터 헤드 및 발광다이오드 어레이의 제조방법
EP2551924A1 (en) * 2010-03-24 2013-01-30 Sumitomo Bakelite Company Limited Method of manufacture for light-emitting element and light-emitting element manufactured thereby
CN103858243A (zh) 2011-08-30 2014-06-11 皇家飞利浦有限公司 将衬底接合到半导体发光器件的方法
DE102012111358A1 (de) 2012-11-23 2014-05-28 Osram Opto Semiconductors Gmbh Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip
DE102013108583A1 (de) 2013-08-08 2015-03-05 Osram Opto Semiconductors Gmbh Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip
JP6312552B2 (ja) * 2014-08-07 2018-04-18 シャープ株式会社 半導体発光素子の製造方法および半導体発光素子
DE102016124646A1 (de) 2016-12-16 2018-06-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
CN115458647B (zh) * 2022-10-31 2025-08-19 天津三安光电有限公司 一种垂直led芯片结构及其制造方法及发光装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005210066A (ja) * 2003-12-25 2005-08-04 Kyocera Corp 薄膜発光素子およびその製造方法
JP4868709B2 (ja) * 2004-03-09 2012-02-01 三洋電機株式会社 発光素子
JP2005276900A (ja) * 2004-03-23 2005-10-06 Shin Etsu Handotai Co Ltd 発光素子
JP4817629B2 (ja) * 2004-09-15 2011-11-16 京セラ株式会社 発光素子およびその発光素子を用いた照明装置

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