JP2008042143A5

JP2008042143A5 -

Info

Publication number: JP2008042143A5
Application number: JP2006218463A
Authority: JP
Filing date: 2006-08-10
Publication date: 2010-09-16

Claims

In the method for producing a group III nitride compound semiconductor light emitting device,
An epitaxial growth step of forming a desired laminated structure on at least an n-type group III nitride compound semiconductor layer and an uppermost p-type group III nitride compound semiconductor layer on an epitaxial growth substrate;
A translucent electrode forming step of forming a translucent electrode on the upper surface of the p-type group III nitride compound semiconductor layer which is the uppermost layer;
A holding substrate bonding step in which a holding substrate for temporary holding is bonded to the translucent electrode side by an adhesive layer made mainly of an organic material ;
A growth substrate removing step excluding the epitaxial growth substrate;
A reflective metal forming step of forming a highly reflective metal layer on the back surface of the exposed n-type group III nitride compound semiconductor layer;
A conductive substrate bonding step of bonding a conductive substrate having a conductive connection layer formed on the back side of the n-type Group III nitride compound semiconductor layer covered with the highly reflective metal layer;
A method of manufacturing a group III nitride compound semiconductor light emitting device, comprising at least a holding substrate removing step of removing the holding substrate and the adhesive layer made of the organic material.

In the holding substrate bonding step, the holding substrate is bonded to the translucent electrode side with an adhesive layer made of the organic material through a sacrificial layer made of metal,
3. The III of claim 1, wherein in the holding substrate removing step, the holding substrate and the adhesive layer made of the organic material are removed after the sacrificial layer made of the metal is decomposed or removed. A method for manufacturing a group nitride compound semiconductor light emitting device.

After the translucent electrode forming step,
Patterning the translucent electrode;
The method for producing a Group III nitride compound semiconductor light-emitting device according to claim 2, further comprising a step of providing a wet etching-resistant layer that covers the translucent electrode after patterning.

Following the holding substrate removal step,
The stacked structure formed on the conductive substrate reaches the n-type Group III nitride compound semiconductor layer from the p-type Group III nitride compound semiconductor layer side of the uppermost layer and is highly reflective. A half-cut step of forming a first groove for separation by a first dicing blade so as not to reach the conductive metal layer;
2. A full cut step of forming a second groove for separation reaching the conductive substrate by a second dicing blade having a thickness smaller than that of the first dicing blade. The manufacturing method of the group III nitride compound semiconductor light-emitting device of any one of Claim 3.

The growth substrate removing step is a step performed by irradiating the vicinity of the interface between the n-type group III nitride compound semiconductor layer and the substrate for epitaxial growth to decompose the vicinity of the interface. The manufacturing method of the group III nitride compound semiconductor light-emitting device of any one of Claim 1 thru | or 4.