CN102696120B - 形成复合衬底以及在复合衬底上生长iii-v族发光器件的方法 - Google Patents

形成复合衬底以及在复合衬底上生长iii-v族发光器件的方法 Download PDF

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Publication number
CN102696120B
CN102696120B CN201180006006.4A CN201180006006A CN102696120B CN 102696120 B CN102696120 B CN 102696120B CN 201180006006 A CN201180006006 A CN 201180006006A CN 102696120 B CN102696120 B CN 102696120B
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seed layer
layer
substrate
regions
region
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Expired - Fee Related
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CN201180006006.4A
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English (en)
Chinese (zh)
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CN102696120A (zh
Inventor
N.F.加德纳
M.R.克拉梅斯
M.B.麦老恩
S.伊
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Koninklijke Philips NV
Lumileds LLC
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Koninklijke Philips Electronics NV
Philips Lumileds Lighing Co LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201180006006.4A 2010-01-15 2011-01-10 形成复合衬底以及在复合衬底上生长iii-v族发光器件的方法 Expired - Fee Related CN102696120B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/688382 2010-01-15
US12/688,382 US8105852B2 (en) 2010-01-15 2010-01-15 Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate
PCT/IB2011/050096 WO2011086494A1 (en) 2010-01-15 2011-01-10 Method of forming a composite substrate and growing a iii-v light emitting device over the composite substrate

Publications (2)

Publication Number Publication Date
CN102696120A CN102696120A (zh) 2012-09-26
CN102696120B true CN102696120B (zh) 2015-11-25

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Country Status (7)

Country Link
US (1) US8105852B2 (enExample)
EP (1) EP2524400B1 (enExample)
JP (1) JP5727514B2 (enExample)
KR (2) KR101783796B1 (enExample)
CN (1) CN102696120B (enExample)
TW (1) TWI523256B (enExample)
WO (1) WO2011086494A1 (enExample)

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JP2529686Y2 (ja) 1987-02-13 1997-03-19 富士電機株式会社 自動販売機の搬出機構識別装置
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8536022B2 (en) * 2010-05-19 2013-09-17 Koninklijke Philips N.V. Method of growing composite substrate using a relaxed strained layer
US9450143B2 (en) * 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8686461B2 (en) 2011-01-03 2014-04-01 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) die having stepped substrates and method of fabrication
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US9646827B1 (en) 2011-08-23 2017-05-09 Soraa, Inc. Method for smoothing surface of a substrate containing gallium and nitrogen
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
CN105244423B (zh) * 2015-10-30 2018-11-20 漳州立达信光电子科技有限公司 无衬底led芯片的封装方法及无衬底led芯片
US10756235B2 (en) 2017-03-09 2020-08-25 Enkris Semiconductor, Inc Stripped method for preparing semiconductor structure
DE102019004261A1 (de) * 2019-06-18 2020-12-24 lnfineon Technologies AG Verfahren zum Bearbeiten einer Substratanordnung und Wafer-Verbundstruktur
CN110600435A (zh) * 2019-09-05 2019-12-20 方天琦 多层复合基板结构及其制备方法
GB2586862B (en) 2019-09-06 2021-12-15 Plessey Semiconductors Ltd LED precursor incorporating strain relaxing structure
GB2593693B (en) * 2020-03-30 2022-08-03 Plessey Semiconductors Ltd LED precursor

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US6261929B1 (en) * 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
CN1305639A (zh) * 1998-06-10 2001-07-25 北卡罗莱纳州立大学 利用始于沟槽侧壁的横向生长来制造氮化镓半导体层
CN1348603A (zh) * 1998-11-24 2002-05-08 北卡罗莱纳州立大学 用横向生长制备氮化镓层
CN1933205A (zh) * 2005-08-12 2007-03-21 三星电子株式会社 生长半导体衬底的方法、氮化物基发光器件及其制造方法
US20090191659A1 (en) * 2005-08-12 2009-07-30 Samsung Electronics Co., Ltd Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same
CN101622689A (zh) * 2007-02-19 2010-01-06 朗讯科技公司 宽带隙半导体器件

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FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
FR2817394B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
JP4422473B2 (ja) * 2003-01-20 2010-02-24 パナソニック株式会社 Ｉｉｉ族窒化物基板の製造方法
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
EP2750194A1 (en) * 2005-06-22 2014-07-02 Seoul Viosys Co., Ltd. Light emitting device comprising a plurality of light emitting diode cells
US7273798B2 (en) * 2005-08-01 2007-09-25 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Gallium nitride device substrate containing a lattice parameter altering element
JP2007048869A (ja) * 2005-08-09 2007-02-22 Sony Corp ＧａＮ系半導体発光素子の製造方法
US8334155B2 (en) * 2005-09-27 2012-12-18 Philips Lumileds Lighting Company Llc Substrate for growing a III-V light emitting device
JP2007142345A (ja) * 2005-11-22 2007-06-07 Rohm Co Ltd 窒化物半導体発光素子
JP4807081B2 (ja) * 2006-01-16 2011-11-02 ソニー株式会社 ＧａＮ系化合物半導体から成る下地層の形成方法、並びに、ＧａＮ系半導体発光素子の製造方法
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CN1305639A (zh) * 1998-06-10 2001-07-25 北卡罗莱纳州立大学 利用始于沟槽侧壁的横向生长来制造氮化镓半导体层
CN1348603A (zh) * 1998-11-24 2002-05-08 北卡罗莱纳州立大学 用横向生长制备氮化镓层
US6261929B1 (en) * 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
CN1933205A (zh) * 2005-08-12 2007-03-21 三星电子株式会社 生长半导体衬底的方法、氮化物基发光器件及其制造方法
US20090191659A1 (en) * 2005-08-12 2009-07-30 Samsung Electronics Co., Ltd Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same
CN101622689A (zh) * 2007-02-19 2010-01-06 朗讯科技公司 宽带隙半导体器件

Also Published As

Publication number Publication date
CN102696120A (zh) 2012-09-26
TWI523256B (zh) 2016-02-21
EP2524400A1 (en) 2012-11-21
JP5727514B2 (ja) 2015-06-03
KR101783796B1 (ko) 2017-10-10
KR20120114357A (ko) 2012-10-16
KR20170122790A (ko) 2017-11-06
TW201143132A (en) 2011-12-01
US8105852B2 (en) 2012-01-31
EP2524400B1 (en) 2018-12-19
WO2011086494A1 (en) 2011-07-21
KR101894691B1 (ko) 2018-09-04
US20110177631A1 (en) 2011-07-21
JP2013517622A (ja) 2013-05-16

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Address after: Eindhoven, Netherlands

Co-patentee after: LUMILEDS LLC

Patentee after: KONINKLIJKE PHILIPS N.V.

Address before: Eindhoven, Netherlands

Co-patentee before: Philips Ramildes Lighting Equipment Co.,Ltd.

Patentee before: KONINKLIJKE PHILIPS ELECTRONICS N.V.

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Effective date of registration: 20200901

Address after: Holland Schiphol

Patentee after: KONINKLIJKE PHILIPS NV

Address before: Eindhoven, Netherlands

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Granted publication date: 20151125

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