CN102165609B - 复合衬底上生长的半导体发光器件 - Google Patents
复合衬底上生长的半导体发光器件 Download PDFInfo
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- CN102165609B CN102165609B CN2009801374697A CN200980137469A CN102165609B CN 102165609 B CN102165609 B CN 102165609B CN 2009801374697 A CN2009801374697 A CN 2009801374697A CN 200980137469 A CN200980137469 A CN 200980137469A CN 102165609 B CN102165609 B CN 102165609B
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- iii
- iii group
- nitride semiconductor
- iii nitride
- island
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/236853 | 2008-09-24 | ||
US12/236,853 | 2008-09-24 | ||
US12/236,853 US9117944B2 (en) | 2008-09-24 | 2008-09-24 | Semiconductor light emitting devices grown on composite substrates |
PCT/IB2009/054134 WO2010035211A1 (en) | 2008-09-24 | 2009-09-21 | Semiconductor light emitting devices grown on composite substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102165609A CN102165609A (zh) | 2011-08-24 |
CN102165609B true CN102165609B (zh) | 2013-12-04 |
Family
ID=41466848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009801374697A Active CN102165609B (zh) | 2008-09-24 | 2009-09-21 | 复合衬底上生长的半导体发光器件 |
Country Status (9)
Country | Link |
---|---|
US (1) | US9117944B2 (zh) |
EP (1) | EP2329536B1 (zh) |
JP (1) | JP5734190B2 (zh) |
KR (2) | KR101799716B1 (zh) |
CN (1) | CN102165609B (zh) |
BR (1) | BRPI0913752B1 (zh) |
RU (1) | RU2515205C2 (zh) |
TW (1) | TWI497749B (zh) |
WO (1) | WO2010035211A1 (zh) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090309114A1 (en) * | 2008-01-16 | 2009-12-17 | Luminus Devices, Inc. | Wavelength converting light-emitting devices and methods of making the same |
JP5226449B2 (ja) * | 2008-10-03 | 2013-07-03 | スタンレー電気株式会社 | 半導体発光装置 |
US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
US9029866B2 (en) * | 2009-08-04 | 2015-05-12 | Gan Systems Inc. | Gallium nitride power devices using island topography |
WO2011014951A1 (en) | 2009-08-04 | 2011-02-10 | John Roberts | Island matrixed gallium nitride microwave and power switching transistors |
US8581229B2 (en) | 2009-11-23 | 2013-11-12 | Koninklijke Philips N.V. | III-V light emitting device with thin n-type region |
TWI414088B (zh) * | 2009-12-16 | 2013-11-01 | Epistar Corp | 發光元件及其製造方法 |
KR101165255B1 (ko) | 2010-09-24 | 2012-07-19 | 서울옵토디바이스주식회사 | 고효율 발광 다이오드 및 그것을 제조하는 방법 |
WO2011126248A2 (en) * | 2010-04-06 | 2011-10-13 | Seoul Opto Device Co., Ltd. | Light emitting diode and method of fabricating the same |
CN102893392B (zh) | 2010-04-13 | 2015-08-05 | Gan系统公司 | 采用孤岛拓扑结构的高密度氮化镓器件 |
JP5343040B2 (ja) * | 2010-06-07 | 2013-11-13 | 株式会社東芝 | 半導体発光装置 |
JP5449039B2 (ja) * | 2010-06-07 | 2014-03-19 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
DE102011013052A1 (de) * | 2011-03-04 | 2012-09-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterbauelements |
CN103563099A (zh) * | 2011-06-01 | 2014-02-05 | 皇家飞利浦有限公司 | 键合到支撑衬底的发光器件 |
DE202012013620U1 (de) * | 2011-09-16 | 2018-08-06 | Seoul Viosys Co., Ltd. | Leuchtdiode |
DE102011113775B9 (de) * | 2011-09-19 | 2021-10-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102012101409A1 (de) * | 2011-12-23 | 2013-06-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
FR2992466A1 (fr) | 2012-06-22 | 2013-12-27 | Soitec Silicon On Insulator | Procede de realisation de contact pour led et structure resultante |
CN103579431A (zh) * | 2012-08-07 | 2014-02-12 | 华夏光股份有限公司 | 半导体发光结构及其制造方法 |
DE102012111123A1 (de) * | 2012-09-26 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Licht emittierendes Halbleiterbauelement |
US8765563B2 (en) * | 2012-09-28 | 2014-07-01 | Intel Corporation | Trench confined epitaxially grown device layer(s) |
CN103227265B (zh) * | 2013-04-12 | 2015-08-19 | 厦门大学 | 一种氮化镓基垂直腔面发射激光器的制作方法 |
JP6523179B2 (ja) * | 2013-12-02 | 2019-05-29 | 東芝ホクト電子株式会社 | 発光ユニット、発光装置及び発光ユニットの製造方法 |
KR102181398B1 (ko) * | 2014-06-11 | 2020-11-23 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
US10418511B2 (en) * | 2015-06-22 | 2019-09-17 | University Of South Carolina | Double mesa large area AlInGaBN LED design for deep UV and other applications |
WO2016209886A1 (en) | 2015-06-22 | 2016-12-29 | University Of South Carolina | MOCVD SYSTEM INJECTOR FOR FAST GROWTH OF AlInGaBN MATERIAL |
DE102015114587A1 (de) * | 2015-09-01 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung |
FR3063571B1 (fr) | 2017-03-01 | 2021-04-30 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat donneur pour la formation de dispositifs optoelectroniques, collection de substrats issus de ce procede |
KR102381866B1 (ko) * | 2017-05-02 | 2022-04-04 | 서울바이오시스 주식회사 | 자외선 발광 다이오드 |
TWI689092B (zh) * | 2017-06-09 | 2020-03-21 | 美商晶典有限公司 | 具有透光基材之微發光二極體顯示模組及其製造方法 |
FR3086100B1 (fr) * | 2018-09-13 | 2022-08-12 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif optoelectronique comprenant une pluralite de diodes |
KR102590229B1 (ko) | 2018-10-15 | 2023-10-17 | 삼성전자주식회사 | Led 소자 및 led 소자의 제조 방법 |
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US9117944B2 (en) | 2015-08-25 |
RU2515205C2 (ru) | 2014-05-10 |
EP2329536B1 (en) | 2018-08-15 |
EP2329536A1 (en) | 2011-06-08 |
WO2010035211A1 (en) | 2010-04-01 |
RU2011116095A (ru) | 2012-10-27 |
KR20110055745A (ko) | 2011-05-25 |
TWI497749B (zh) | 2015-08-21 |
KR20160096210A (ko) | 2016-08-12 |
KR101799716B1 (ko) | 2017-11-20 |
CN102165609A (zh) | 2011-08-24 |
JP5734190B2 (ja) | 2015-06-17 |
TW201019513A (en) | 2010-05-16 |
BRPI0913752A2 (pt) | 2015-10-20 |
KR101674228B1 (ko) | 2016-11-08 |
JP2012503861A (ja) | 2012-02-09 |
BRPI0913752B1 (pt) | 2019-09-17 |
US20100072489A1 (en) | 2010-03-25 |
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