TWI655790B - 包含在緩衝層堆疊上的三五族主動半導體層的半導體結構以及用於產生半導體結構的方法 - Google Patents

包含在緩衝層堆疊上的三五族主動半導體層的半導體結構以及用於產生半導體結構的方法 Download PDF

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Publication number
TWI655790B
TWI655790B TW104124232A TW104124232A TWI655790B TW I655790 B TWI655790 B TW I655790B TW 104124232 A TW104124232 A TW 104124232A TW 104124232 A TW104124232 A TW 104124232A TW I655790 B TWI655790 B TW I655790B
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layer
buffer layer
individual
buffer
stack
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TW104124232A
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Chinese (zh)
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TW201611330A (zh
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就夫 德路恩
史德芬 德格斯
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比利時商艾彼干公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/125—Shapes of junctions between the regions
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3216—
    • H10P14/3251—
    • H10P14/3254—
    • H10P14/3416—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
TW104124232A 2014-08-04 2015-07-27 包含在緩衝層堆疊上的三五族主動半導體層的半導體結構以及用於產生半導體結構的方法 TWI655790B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14179690.4A EP2983195A1 (en) 2014-08-04 2014-08-04 Semiconductor structure comprising an active semiconductor layer of the iii-v type on a buffer layer stack and method for producing semiconductor structure
??14179690.4 2014-08-04

Publications (2)

Publication Number Publication Date
TW201611330A TW201611330A (zh) 2016-03-16
TWI655790B true TWI655790B (zh) 2019-04-01

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Country Status (7)

Country Link
US (1) US9991346B2 (enExample)
EP (2) EP2983195A1 (enExample)
JP (1) JP6484328B2 (enExample)
KR (1) KR101899742B1 (enExample)
CN (1) CN106663596B (enExample)
TW (1) TWI655790B (enExample)
WO (1) WO2016020196A1 (enExample)

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JP6653750B2 (ja) * 2016-02-26 2020-02-26 サンケン電気株式会社 半導体基体及び半導体装置
CN106876253B (zh) * 2017-03-10 2019-06-04 成都海威华芯科技有限公司 一种锐角金属图形剥离方法
WO2019069604A1 (ja) * 2017-10-06 2019-04-11 パナソニックＩｐマネジメント株式会社 半導体発光素子
WO2019104232A1 (en) * 2017-11-22 2019-05-31 Iqe Plc A strain-balanced semiconductor structure
CN108598234A (zh) * 2018-04-26 2018-09-28 吉林大学 一种降低SiC衬底上GaN薄膜内张应力的外延结构及其制备方法
JP7158272B2 (ja) * 2018-12-25 2022-10-21 エア・ウォーター株式会社 化合物半導体基板
TWI701717B (zh) 2019-08-12 2020-08-11 環球晶圓股份有限公司 磊晶結構
KR102874457B1 (ko) * 2019-10-17 2025-10-20 삼성전자주식회사 반도체 박막 구조체 및 이를 포함하는 전자 소자
CN110783395B (zh) * 2019-11-06 2022-10-14 錼创显示科技股份有限公司 半导体结构
TWI735212B (zh) * 2020-04-24 2021-08-01 環球晶圓股份有限公司 具有超晶格疊層體的磊晶結構
CN115692557A (zh) * 2021-07-23 2023-02-03 晶元光电股份有限公司 半导体元件
CN114464711B (zh) * 2021-12-31 2024-06-25 山东大学 一种深紫外发光二极管及其制备方法

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EP2525417A2 (en) * 2011-05-16 2012-11-21 Kabushiki Kaisha Toshiba Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
EP2565907A1 (en) * 2010-04-28 2013-03-06 NGK Insulators, Ltd. Epitaxial substrate and method for producing epitaxial substrate
US20140138699A1 (en) * 2012-11-21 2014-05-22 Kabushiki Kaisha Toshiba Nitride semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
US20140361345A1 (en) * 2013-06-07 2014-12-11 Kabushiki Kaisha Toshiba Nitride semiconductor wafer, nitride semiconductor element, and method for manufacturing nitride semiconductor wafer

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US20080217645A1 (en) * 2007-03-09 2008-09-11 Adam William Saxler Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures
EP2565907A1 (en) * 2010-04-28 2013-03-06 NGK Insulators, Ltd. Epitaxial substrate and method for producing epitaxial substrate
EP2525417A2 (en) * 2011-05-16 2012-11-21 Kabushiki Kaisha Toshiba Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
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TWI730494B (zh) * 2019-11-06 2021-06-11 錼創顯示科技股份有限公司 半導體結構
US11329192B2 (en) 2019-11-06 2022-05-10 PlayNitride Display Co., Ltd. Semiconductor structure

Also Published As

Publication number Publication date
TW201611330A (zh) 2016-03-16
WO2016020196A1 (en) 2016-02-11
EP3178107C0 (en) 2024-11-27
US20170229549A1 (en) 2017-08-10
EP3178107B1 (en) 2024-11-27
KR101899742B1 (ko) 2018-09-17
EP2983195A1 (en) 2016-02-10
EP3178107A1 (en) 2017-06-14
US9991346B2 (en) 2018-06-05
EP3178107B8 (en) 2025-01-01
CN106663596B (zh) 2019-11-22
JP2017529692A (ja) 2017-10-05
CN106663596A (zh) 2017-05-10
JP6484328B2 (ja) 2019-03-13
KR20170041227A (ko) 2017-04-14

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