JP2006518104A - シリコン基板改質用バッファ構造 - Google Patents
シリコン基板改質用バッファ構造 Download PDFInfo
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- JP2006518104A JP2006518104A JP2006502270A JP2006502270A JP2006518104A JP 2006518104 A JP2006518104 A JP 2006518104A JP 2006502270 A JP2006502270 A JP 2006502270A JP 2006502270 A JP2006502270 A JP 2006502270A JP 2006518104 A JP2006518104 A JP 2006518104A
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- buffer
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- buffer structure
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/0251—Graded layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
Abstract
Description
Claims (18)
- 後続のターゲット材堆積のためのシリコン基板を改質するバッファ構造であって、バッファ構造が、IIIB族窒化物合金を含む組成傾斜バッファ層を含み、前記合金が、前記傾斜を達成する深さとともに相対量が変化する2つ以上のIIIB族元素を含むバッファ構造。
- 合金が、ランタン、スカンジウムおよびイットリウムから選択された少なくとも2つのIIIB族元素を含む請求項1に記載のバッファ構造。
- 合金が、La(1−x)ScxN(0<x<1)、La(1−y)YyN(0<y<1)、Y(1−z)SczN(0<z<1)、およびLa(1−x−y)ScxYyN(0<x<1、0<y<1、x+y<1)からなる群から選択される請求項2に記載のバッファ構造。
- 合金が、組成傾斜窒化ランタンスカンジウム合金である請求項3に記載のバッファ構造。
- 請求項1から4のいずれかに記載のバッファ構造を含む結晶構造、および前記バッファ層上に設けられたターゲット材層。
- IIIB族窒化物合金からなる定組成の副層が、ターゲット材下方のバッファ層の上部領域内に堆積される請求項5に記載の結晶構造。
- ターゲット材が、立方晶構造または六方晶構造を有する任意の酸化物または窒化物である請求項5または6に記載の結晶構造。
- ターゲット材が、AlN、InNおよびGaN、またはそれらの合金のうちいずれか1つを含むIII−V族半導体である請求項7に記載の結晶構造。
- III−V族半導体が、窒化ガリウムを含む請求項8に記載の結晶構造。
- バッファ構造が、シリコン基板上に設けられる請求項5から9のいずれか一項に記載の結晶構造。
- 請求項5から10のいずれか一項に特定された結晶構造を含む半導体デバイス。
- 後続のターゲット材堆積のためのシリコン基板を改質するバッファ構造を形成する方法であって、方法が、シリコン基板上にIIIB族窒化物合金を含む組成傾斜バッファ層を成長させる段階を含み、前記合金が、前記傾斜を達成する深さとともに相対量が変化する2つ以上のIIIB族元素を含む方法。
- バッファ構造が、請求項2から4のいずれか一項または複数項に特定される請求項12に記載の方法。
- ターゲット材層が、バッファ構造上に続いて堆積される請求項12または13に記載の方法。
- 半導体デバイスを形成する処理段階をさらに含む請求項14に記載の方法。
- ヘテロエピタキシャル成長をその上で行うシリコン基板を改質するためのIIIB族窒化物合金からなる組成傾斜中間層の使用。
- 添付の図面を参照して実質的に先に説明されたバッファ構造。
- 添付の図面を参照して実質的に先に説明されたバッファ構造を形成する方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0303784A GB2398672A (en) | 2003-02-19 | 2003-02-19 | Group IIIA nitride buffer layers |
PCT/GB2004/000560 WO2004075249A2 (en) | 2003-02-19 | 2004-02-16 | Buffer structure for modifying a silicon substrate |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006518104A true JP2006518104A (ja) | 2006-08-03 |
JP2006518104A5 JP2006518104A5 (ja) | 2007-03-15 |
JP4493646B2 JP4493646B2 (ja) | 2010-06-30 |
Family
ID=9953280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006502270A Expired - Fee Related JP4493646B2 (ja) | 2003-02-19 | 2004-02-16 | 後続のターゲット材堆積のためのシリコン基板を改質するバッファ構造および該バッファ構造を形成する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7323764B2 (ja) |
EP (1) | EP1595280B8 (ja) |
JP (1) | JP4493646B2 (ja) |
CN (1) | CN100382244C (ja) |
AT (1) | ATE349774T1 (ja) |
DE (1) | DE602004003910T2 (ja) |
GB (2) | GB2398672A (ja) |
WO (1) | WO2004075249A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019522358A (ja) * | 2016-06-02 | 2019-08-08 | アイキューイー ピーエルシーIQE plc | GaN基板用途のためのプニクタイド緩衝材構造およびデバイス |
KR102098572B1 (ko) * | 2018-12-26 | 2020-04-08 | 한국세라믹기술원 | 에피택시 성장을 위한 기판 소재의 탐색 장치 및 방법 그리고 이를 구현하기 위한 프로그램을 기록한 기록매체 |
Families Citing this family (29)
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EP1883103A3 (en) * | 2006-07-27 | 2008-03-05 | Interuniversitair Microelektronica Centrum | Deposition of group III-nitrides on Ge |
US7494911B2 (en) | 2006-09-27 | 2009-02-24 | Intel Corporation | Buffer layers for device isolation of devices grown on silicon |
US8106381B2 (en) * | 2006-10-18 | 2012-01-31 | Translucent, Inc. | Semiconductor structures with rare-earths |
US8157914B1 (en) | 2007-02-07 | 2012-04-17 | Chien-Min Sung | Substrate surface modifications for compositional gradation of crystalline materials and associated products |
US7799600B2 (en) | 2007-05-31 | 2010-09-21 | Chien-Min Sung | Doped diamond LED devices and associated methods |
US8039738B2 (en) * | 2007-07-26 | 2011-10-18 | Translucent, Inc. | Active rare earth tandem solar cell |
US8049100B2 (en) * | 2007-07-26 | 2011-11-01 | Translucent, Inc. | Multijunction rare earth solar cell |
US8039737B2 (en) * | 2007-07-26 | 2011-10-18 | Translucent, Inc. | Passive rare earth tandem solar cell |
CA2742128C (en) * | 2008-01-28 | 2016-11-29 | Amit Goyal | Semiconductor-based large-area flexible electronic devices |
DE102009000514A1 (de) * | 2009-01-30 | 2010-08-26 | Robert Bosch Gmbh | Verbundbauteil sowie Verfahren zum Herstellen eines Verbundbauteil |
EP2413350A4 (en) * | 2009-03-27 | 2013-10-23 | Dowa Holdings Co Ltd | GROUP III NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR COMPONENT, AUTONOMOUS SUBSTRATE FOR GROUP III NITRIDE SEMICONDUCTORS AND METHODS OF MAKING SAME MANUFACTURING |
GB2469448A (en) * | 2009-04-14 | 2010-10-20 | Qinetiq Ltd | Strain Control in Semiconductor Devices |
JP5614531B2 (ja) * | 2010-03-12 | 2014-10-29 | セイコーエプソン株式会社 | 液体噴射ヘッド及びそれを用いた液体噴射装置並びに圧電素子 |
WO2012074523A1 (en) | 2010-12-01 | 2012-06-07 | Alliance For Sustainable Energy, Llc | Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates |
WO2012074524A1 (en) | 2010-12-01 | 2012-06-07 | Alliance For Sustainable Energy, Llc | Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers |
KR101883840B1 (ko) * | 2011-08-31 | 2018-08-01 | 엘지이노텍 주식회사 | 발광소자 |
US8698163B2 (en) | 2011-09-29 | 2014-04-15 | Toshiba Techno Center Inc. | P-type doping layers for use with light emitting devices |
US9178114B2 (en) | 2011-09-29 | 2015-11-03 | Manutius Ip, Inc. | P-type doping layers for use with light emitting devices |
US20130082274A1 (en) | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
US8853668B2 (en) | 2011-09-29 | 2014-10-07 | Kabushiki Kaisha Toshiba | Light emitting regions for use with light emitting devices |
US8664679B2 (en) | 2011-09-29 | 2014-03-04 | Toshiba Techno Center Inc. | Light emitting devices having light coupling layers with recessed electrodes |
US9012921B2 (en) | 2011-09-29 | 2015-04-21 | Kabushiki Kaisha Toshiba | Light emitting devices having light coupling layers |
US20130099357A1 (en) * | 2011-10-21 | 2013-04-25 | Rytis Dargis | Strain compensated reo buffer for iii-n on silicon |
US8394194B1 (en) * | 2012-06-13 | 2013-03-12 | Rytis Dargis | Single crystal reo buffer on amorphous SiOx |
WO2014057748A1 (ja) * | 2012-10-12 | 2014-04-17 | 住友電気工業株式会社 | Iii族窒化物複合基板およびその製造方法、ならびにiii族窒化物半導体デバイスの製造方法 |
CN103794460B (zh) * | 2012-10-29 | 2016-12-21 | 中微半导体设备(上海)有限公司 | 用于半导体装置性能改善的涂层 |
TWI491068B (zh) * | 2012-11-08 | 2015-07-01 | Ind Tech Res Inst | 氮化物半導體結構 |
CN105393336B (zh) * | 2013-07-22 | 2017-10-31 | 日本碍子株式会社 | 复合基板、其制造方法、功能元件以及晶种基板 |
EP4281996A1 (en) * | 2021-01-19 | 2023-11-29 | Alliance for Sustainable Energy, LLC | Dynamic hvpe of compositionally graded buffer layers |
Citations (7)
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JPH08330628A (ja) * | 1995-03-30 | 1996-12-13 | Toshiba Corp | 半導体発光素子、及びその製造方法 |
JPH11147791A (ja) * | 1997-11-12 | 1999-06-02 | Showa Denko Kk | 単結晶基板とその上に成長させた窒化ガリウム系化合物半導体結晶とから構成されたエピタキシャルウェハ |
JPH11260835A (ja) * | 1997-07-11 | 1999-09-24 | Tdk Corp | 電子デバイス用基板 |
JP2001230447A (ja) * | 2000-02-16 | 2001-08-24 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子の製造方法 |
US20020074552A1 (en) * | 2000-12-14 | 2002-06-20 | Weeks T. Warren | Gallium nitride materials and methods |
JP2002222803A (ja) * | 2001-12-03 | 2002-08-09 | Kyocera Corp | 半導体製造用耐食性部材 |
JP2003008061A (ja) * | 2001-06-25 | 2003-01-10 | Nobuhiko Sawaki | 窒化物半導体の製造方法 |
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-
2003
- 2003-02-19 GB GB0303784A patent/GB2398672A/en not_active Withdrawn
-
2004
- 2004-02-16 EP EP04711402A patent/EP1595280B8/en not_active Expired - Lifetime
- 2004-02-16 GB GB0515760A patent/GB2413898B/en not_active Expired - Fee Related
- 2004-02-16 JP JP2006502270A patent/JP4493646B2/ja not_active Expired - Fee Related
- 2004-02-16 DE DE602004003910T patent/DE602004003910T2/de not_active Expired - Lifetime
- 2004-02-16 CN CNB2004800046781A patent/CN100382244C/zh not_active Expired - Fee Related
- 2004-02-16 WO PCT/GB2004/000560 patent/WO2004075249A2/en active IP Right Grant
- 2004-02-16 US US10/545,911 patent/US7323764B2/en not_active Expired - Lifetime
- 2004-02-16 AT AT04711402T patent/ATE349774T1/de not_active IP Right Cessation
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JPH08330628A (ja) * | 1995-03-30 | 1996-12-13 | Toshiba Corp | 半導体発光素子、及びその製造方法 |
JPH11260835A (ja) * | 1997-07-11 | 1999-09-24 | Tdk Corp | 電子デバイス用基板 |
JPH11147791A (ja) * | 1997-11-12 | 1999-06-02 | Showa Denko Kk | 単結晶基板とその上に成長させた窒化ガリウム系化合物半導体結晶とから構成されたエピタキシャルウェハ |
JP2001230447A (ja) * | 2000-02-16 | 2001-08-24 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子の製造方法 |
US20020074552A1 (en) * | 2000-12-14 | 2002-06-20 | Weeks T. Warren | Gallium nitride materials and methods |
JP2003008061A (ja) * | 2001-06-25 | 2003-01-10 | Nobuhiko Sawaki | 窒化物半導体の製造方法 |
JP2002222803A (ja) * | 2001-12-03 | 2002-08-09 | Kyocera Corp | 半導体製造用耐食性部材 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019522358A (ja) * | 2016-06-02 | 2019-08-08 | アイキューイー ピーエルシーIQE plc | GaN基板用途のためのプニクタイド緩衝材構造およびデバイス |
KR102098572B1 (ko) * | 2018-12-26 | 2020-04-08 | 한국세라믹기술원 | 에피택시 성장을 위한 기판 소재의 탐색 장치 및 방법 그리고 이를 구현하기 위한 프로그램을 기록한 기록매체 |
Also Published As
Publication number | Publication date |
---|---|
CN100382244C (zh) | 2008-04-16 |
EP1595280B8 (en) | 2007-02-28 |
CN1751379A (zh) | 2006-03-22 |
EP1595280A2 (en) | 2005-11-16 |
US20060145186A1 (en) | 2006-07-06 |
GB0515760D0 (en) | 2005-09-07 |
DE602004003910T2 (de) | 2007-05-16 |
WO2004075249A3 (en) | 2004-10-28 |
GB2413898B (en) | 2006-08-16 |
US7323764B2 (en) | 2008-01-29 |
ATE349774T1 (de) | 2007-01-15 |
EP1595280B1 (en) | 2006-12-27 |
WO2004075249A2 (en) | 2004-09-02 |
GB0303784D0 (en) | 2003-03-26 |
GB2413898A (en) | 2005-11-09 |
GB2398672A (en) | 2004-08-25 |
DE602004003910D1 (de) | 2007-02-08 |
JP4493646B2 (ja) | 2010-06-30 |
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