JP2006518104A5 - - Google Patents
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- JP2006518104A5 JP2006518104A5 JP2006502270A JP2006502270A JP2006518104A5 JP 2006518104 A5 JP2006518104 A5 JP 2006518104A5 JP 2006502270 A JP2006502270 A JP 2006502270A JP 2006502270 A JP2006502270 A JP 2006502270A JP 2006518104 A5 JP2006518104 A5 JP 2006518104A5
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- Prior art keywords
- alloy
- buffer structure
- buffer
- target material
- structure according
- Prior art date
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- 229910045601 alloy Inorganic materials 0.000 claims 10
- 239000000956 alloy Substances 0.000 claims 10
- 239000000463 material Substances 0.000 claims 7
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims 6
- -1 nitride alloy Chemical class 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 2
- 229910017083 AlN Inorganic materials 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 claims 1
- 229910000542 Sc alloy Inorganic materials 0.000 claims 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 1
- 229950008597 drug INN Drugs 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims 1
- 229910052706 scandium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
Claims (18)
- 後続のターゲット材堆積のためのシリコン基板を改質するバッファ構造であって、バッファ構造が、ＩＩＩＢ族窒化物合金を含む組成傾斜バッファ層を含み、前記合金が、前記傾斜を達成する深さとともに相対量が変化する２つ以上のＩＩＩＢ族元素を含むバッファ構造。
- 合金が、ランタン、スカンジウムおよびイットリウムから選択された少なくとも２つのＩＩＩＢ族元素を含む請求項１に記載のバッファ構造。
- 合金が、Ｌａ（１−ｘ）ＳｃｘＮ（０＜ｘ＜１）、Ｌａ（１−ｙ）ＹｙＮ（０＜ｙ＜１）、Ｙ（１−ｚ）ＳｃｚＮ（０＜ｚ＜１）、およびＬａ（１−ｘ−ｙ）ＳｃｘＹｙＮ（０＜ｘ＜１、０＜ｙ＜１、ｘ＋ｙ＜１）からなる群から選択される請求項２に記載のバッファ構造。
- 合金が、組成傾斜窒化ランタンスカンジウム合金である請求項３に記載のバッファ構造。
- 請求項１から４のいずれかに記載のバッファ構造、および前記バッファ層上に設けられたターゲット材層を含む結晶構造。
- ＩＩＩＢ族窒化物合金からなる定組成の副層が、ターゲット材下方のバッファ層の上部領域内に堆積される請求項５に記載の結晶構造。
- ターゲット材が、立方晶構造または六方晶構造を有する任意の酸化物または窒化物である請求項５または６に記載の結晶構造。
- ターゲット材が、ＡｌＮ、ＩｎＮおよびＧａＮ、またはそれらの合金のうちいずれか１つを含むＩＩＩ−Ｖ族半導体である請求項７に記載の結晶構造。
- ＩＩＩ−Ｖ族半導体が、窒化ガリウムを含む請求項８に記載の結晶構造。
- バッファ構造が、シリコン基板上に設けられる請求項５から９のいずれか一項に記載の結晶構造。
- 請求項５から１０のいずれか一項に特定された結晶構造を含む半導体デバイス。
- 後続のターゲット材堆積のためのシリコン基板を改質するバッファ構造を形成する方法であって、方法が、シリコン基板上にＩＩＩＢ族窒化物合金を含む組成傾斜バッファ層を成長させる段階を含み、前記合金が、前記傾斜を達成する深さとともに相対量が変化する２つ以上のＩＩＩＢ族元素を含む方法。
- バッファ構造が、請求項２から４のいずれか一項または複数項に特定される請求項１２に記載の方法。
- ターゲット材層が、バッファ構造上に続いて堆積される請求項１２または１３に記載の方法。
- 半導体デバイスを形成する処理段階をさらに含む請求項１４に記載の方法。
- ヘテロエピタキシャル成長をその上で行うシリコン基板を改質するためのＩＩＩＢ族窒化物合金からなる組成傾斜中間層の使用。
- 添付の図面を参照して実質的に先に説明されたバッファ構造。
- 添付の図面を参照して実質的に先に説明されたバッファ構造を形成する方法。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0303784A GB2398672A (en) | 2003-02-19 | 2003-02-19 | Group IIIA nitride buffer layers |
| PCT/GB2004/000560 WO2004075249A2 (en) | 2003-02-19 | 2004-02-16 | Buffer structure for modifying a silicon substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006518104A JP2006518104A (ja) | 2006-08-03 |
| JP2006518104A5 true JP2006518104A5 (ja) | 2007-03-15 |
| JP4493646B2 JP4493646B2 (ja) | 2010-06-30 |
Family
ID=9953280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006502270A Expired - Fee Related JP4493646B2 (ja) | 2003-02-19 | 2004-02-16 | 後続のターゲット材堆積のためのシリコン基板を改質するバッファ構造および該バッファ構造を形成する方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7323764B2 (ja) |
| EP (1) | EP1595280B8 (ja) |
| JP (1) | JP4493646B2 (ja) |
| CN (1) | CN100382244C (ja) |
| AT (1) | ATE349774T1 (ja) |
| DE (1) | DE602004003910T2 (ja) |
| GB (2) | GB2398672A (ja) |
| WO (1) | WO2004075249A2 (ja) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1883103A3 (en) * | 2006-07-27 | 2008-03-05 | Interuniversitair Microelektronica Centrum | Deposition of group III-nitrides on Ge |
| US7494911B2 (en) | 2006-09-27 | 2009-02-24 | Intel Corporation | Buffer layers for device isolation of devices grown on silicon |
| US8106381B2 (en) * | 2006-10-18 | 2012-01-31 | Translucent, Inc. | Semiconductor structures with rare-earths |
| US8157914B1 (en) | 2007-02-07 | 2012-04-17 | Chien-Min Sung | Substrate surface modifications for compositional gradation of crystalline materials and associated products |
| US7799600B2 (en) | 2007-05-31 | 2010-09-21 | Chien-Min Sung | Doped diamond LED devices and associated methods |
| US8039737B2 (en) * | 2007-07-26 | 2011-10-18 | Translucent, Inc. | Passive rare earth tandem solar cell |
| US8039738B2 (en) * | 2007-07-26 | 2011-10-18 | Translucent, Inc. | Active rare earth tandem solar cell |
| US8049100B2 (en) * | 2007-07-26 | 2011-11-01 | Translucent, Inc. | Multijunction rare earth solar cell |
| EP2250674A4 (en) * | 2008-01-28 | 2013-02-13 | Amit Goyal | BROAD ZONE FLEXIBLE ELECTRONIC DEVICES BASED ON SEMICONDUCTORS |
| DE102009000514A1 (de) * | 2009-01-30 | 2010-08-26 | Robert Bosch Gmbh | Verbundbauteil sowie Verfahren zum Herstellen eines Verbundbauteil |
| WO2010110489A1 (ja) * | 2009-03-27 | 2010-09-30 | Ｄｏｗａホールディングス株式会社 | Iii族窒化物半導体成長用基板、iii族窒化物半導体エピタキシャル基板、iii族窒化物半導体素子およびiii族窒化物半導体自立基板、ならびに、これらの製造方法 |
| GB2469448A (en) * | 2009-04-14 | 2010-10-20 | Qinetiq Ltd | Strain Control in Semiconductor Devices |
| JP5614531B2 (ja) * | 2010-03-12 | 2014-10-29 | セイコーエプソン株式会社 | 液体噴射ヘッド及びそれを用いた液体噴射装置並びに圧電素子 |
| WO2012074523A1 (en) | 2010-12-01 | 2012-06-07 | Alliance For Sustainable Energy, Llc | Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates |
| US9425249B2 (en) | 2010-12-01 | 2016-08-23 | Alliance For Sustainable Energy, Llc | Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers |
| KR101883840B1 (ko) * | 2011-08-31 | 2018-08-01 | 엘지이노텍 주식회사 | 발광소자 |
| US8698163B2 (en) | 2011-09-29 | 2014-04-15 | Toshiba Techno Center Inc. | P-type doping layers for use with light emitting devices |
| US8853668B2 (en) | 2011-09-29 | 2014-10-07 | Kabushiki Kaisha Toshiba | Light emitting regions for use with light emitting devices |
| US9178114B2 (en) | 2011-09-29 | 2015-11-03 | Manutius Ip, Inc. | P-type doping layers for use with light emitting devices |
| US9012921B2 (en) | 2011-09-29 | 2015-04-21 | Kabushiki Kaisha Toshiba | Light emitting devices having light coupling layers |
| US8664679B2 (en) | 2011-09-29 | 2014-03-04 | Toshiba Techno Center Inc. | Light emitting devices having light coupling layers with recessed electrodes |
| US20130082274A1 (en) | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
| US20130099357A1 (en) * | 2011-10-21 | 2013-04-25 | Rytis Dargis | Strain compensated reo buffer for iii-n on silicon |
| US8394194B1 (en) * | 2012-06-13 | 2013-03-12 | Rytis Dargis | Single crystal reo buffer on amorphous SiOx |
| CN104641453B (zh) * | 2012-10-12 | 2018-03-30 | 住友电气工业株式会社 | Iii族氮化物复合衬底及其制造方法以及制造iii族氮化物半导体器件的方法 |
| CN103794460B (zh) * | 2012-10-29 | 2016-12-21 | 中微半导体设备(上海)有限公司 | 用于半导体装置性能改善的涂层 |
| TWI491068B (zh) | 2012-11-08 | 2015-07-01 | Ind Tech Res Inst | 氮化物半導體結構 |
| CN105393336B (zh) * | 2013-07-22 | 2017-10-31 | 日本碍子株式会社 | 复合基板、其制造方法、功能元件以及晶种基板 |
| EP3488462A1 (en) | 2016-06-02 | 2019-05-29 | IQE Plc. | Rare earth interlayers for mechanically bonding dissimilar semiconductor wafers |
| KR102098572B1 (ko) * | 2018-12-26 | 2020-04-08 | 한국세라믹기술원 | 에피택시 성장을 위한 기판 소재의 탐색 장치 및 방법 그리고 이를 구현하기 위한 프로그램을 기록한 기록매체 |
| US20240084479A1 (en) * | 2021-01-19 | 2024-03-14 | Alliance For Sustainable Energy, Llc | Dynamic hvpe of compositionally graded buffer layers |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50102581A (ja) * | 1974-01-16 | 1975-08-13 | ||
| US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
| JP3557011B2 (ja) * | 1995-03-30 | 2004-08-25 | 株式会社東芝 | 半導体発光素子、及びその製造方法 |
| JP3813740B2 (ja) * | 1997-07-11 | 2006-08-23 | Ｔｄｋ株式会社 | 電子デバイス用基板 |
| US6201262B1 (en) | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
| JP3853942B2 (ja) * | 1997-11-12 | 2006-12-06 | 昭和電工株式会社 | エピタキシャルウェハ |
| US6171898B1 (en) * | 1997-12-17 | 2001-01-09 | Texas Instruments Incorporated | Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing |
| US5998232A (en) * | 1998-01-16 | 1999-12-07 | Implant Sciences Corporation | Planar technology for producing light-emitting devices |
| US6255198B1 (en) * | 1998-11-24 | 2001-07-03 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
| JP2001230447A (ja) * | 2000-02-16 | 2001-08-24 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体素子の製造方法 |
| US6649287B2 (en) * | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
| JP3785059B2 (ja) * | 2001-06-25 | 2006-06-14 | 宣彦 澤木 | 窒化物半導体の製造方法 |
| US6646293B2 (en) * | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
| US6472694B1 (en) * | 2001-07-23 | 2002-10-29 | Motorola, Inc. | Microprocessor structure having a compound semiconductor layer |
| JP2002222803A (ja) * | 2001-12-03 | 2002-08-09 | Kyocera Corp | 半導体製造用耐食性部材 |
-
2003
- 2003-02-19 GB GB0303784A patent/GB2398672A/en not_active Withdrawn
-
2004
- 2004-02-16 JP JP2006502270A patent/JP4493646B2/ja not_active Expired - Fee Related
- 2004-02-16 GB GB0515760A patent/GB2413898B/en not_active Expired - Fee Related
- 2004-02-16 DE DE602004003910T patent/DE602004003910T2/de not_active Expired - Lifetime
- 2004-02-16 US US10/545,911 patent/US7323764B2/en not_active Expired - Lifetime
- 2004-02-16 CN CNB2004800046781A patent/CN100382244C/zh not_active Expired - Fee Related
- 2004-02-16 EP EP04711402A patent/EP1595280B8/en not_active Expired - Lifetime
- 2004-02-16 WO PCT/GB2004/000560 patent/WO2004075249A2/en active IP Right Grant
- 2004-02-16 AT AT04711402T patent/ATE349774T1/de not_active IP Right Cessation
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